Dynamic frequency dependence of bias activated negative capacitance in semiconductor diodes under high forward bias

We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physics of junction diodes operating under high charge carrier injection and may lead to superior device functionalities.