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Local Interlayer Tunneling Between Two-Dimensional Electron Systems in the Ballistic Regime

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arxiv 0905.1138 v2 pith:FRBDNYET submitted 2009-05-07 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords tunnelinganomalyballisticelectroninterlayermicroscopysystemtwo-dimensional
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We study a theoretical model of virtual scanning tunneling microscopy (VSTM), a proposed application of interlayer tunneling in a bilayer system to locally probe a two-dimensional electron system (2DES) in a semiconductor heterostructure. We consider tunneling for the case where transport in the 2DESs is ballistic, and show that the zero-bias anomaly is suppressed by extremely efficient screening. Since such an anomaly would complicate the interpretation of data from a VSTM, this result is encouraging for efforts to implement such a microscopy technique.

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