Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-07-07T17:54:09.549838Z
Paper Citation Record · LEDGER
High-temperature operation of III-nitride high-electron-mobility transistors
As of 17 August 2026, this Paper Citation Record lists 100 of 115 outbound references and 0 inbound Pith citation observations for arXiv:2607.05314.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-17T06:30:58.91139+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
100 of 115 outbound references displayed
- verified exact5
- verified fuzzy63
- unresolved32
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation ee7ee25a-f41e-43fb-8567-83b125e02cc4 · outbound
This paper cites K.Extreme-temperature and harsh-environment electronics: physics, technology and applications(IOP Publishing, 2023).
High-temperature operation of III-nitride high-electron-mobility transistors K.Extreme-temperature and harsh-environment electronics: physics, technology and applications(IOP Publishing, 2023)
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.983075Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 8091ea50-f9e9-457d-b5a4-fcb3cb0a8fdb · outbound
This paper cites & Greco, G.
High-temperature operation of III-nitride high-electron-mobility transistors & Greco, G
Reference 2
- Resolution
- verified exact
- doi, observed 2026-07-07T18:04:00.441974Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation a988e132-0746-4180-961c-231b69a78753 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 3
- Resolution
- verified exact
- doi, observed 2026-07-07T18:04:00.439896Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 3636e143-8960-4cdd-9785-c7a3cdedffb1 · outbound
This paper cites & Castro, G.
High-temperature operation of III-nitride high-electron-mobility transistors & Castro, G
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.923404Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 35a3f6ef-d429-4183-a840-d215dcb065f2 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 5
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.928335Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation b0898d6e-9f33-4047-8782-c2db4b2c782a · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 6
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.974495Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0ea5eb12-e289-4810-92e1-912f0de9e612 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 7
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.933229Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 95b48302-64f8-459b-a254-56c0af2d943e · outbound
This paper cites US aiming to ‘crack the code’ on deploying geothermal energy at scale.
High-temperature operation of III-nitride high-electron-mobility transistors US aiming to ‘crack the code’ on deploying geothermal energy at scale
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.939228Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0a7f4559-6d6f-4493-9622-dbe9f9d03cfa · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 9
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.953282Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation b94a5f23-ca95-4f1e-83a1-e2cdf7edace0 · outbound
This paper cites & Mairet, L.
High-temperature operation of III-nitride high-electron-mobility transistors & Mairet, L
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.958469Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 9409b505-b3da-4c36-a825-a17743c6b1ac · outbound
This paper cites Law of cooling, heat conduction and Stefan-Boltzmann radiation laws fitted to experimental data for bones irradiated by CO2 laser.Biomed.
High-temperature operation of III-nitride high-electron-mobility transistors Law of cooling, heat conduction and Stefan-Boltzmann radiation laws fitted to experimental data for bones irradiated by CO2 laser.Biomed
Reference 11
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.948402Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d3fd2a66-22eb-406c-a0d4-cbf33af883b7 · outbound
This paper cites Haber process and Contact process - Higher - Making fertiliser - OCR Gateway - GCSE Chemistry (Single Science) Revision.
High-temperature operation of III-nitride high-electron-mobility transistors Haber process and Contact process - Higher - Making fertiliser - OCR Gateway - GCSE Chemistry (Single Science) Revision
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.972835Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 221f56a4-ee5e-4b69-a731-021c41cfe39b · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 13
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.962008Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 03b7f519-e65d-410b-939a-e3b2e112660a · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 14
- Resolution
- verified exact
- arxiv_id, observed 2026-07-07T18:04:00.434503Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 885a5597-edd7-41d1-9e1e-21d372919642 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 15
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.944283Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 98fee231-38ad-42ab-b8e6-b359e43e8aa2 · outbound
This paper cites J., Yalamarthy, A.
High-temperature operation of III-nitride high-electron-mobility transistors J., Yalamarthy, A
Reference 16
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.930024Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation cb424fcc-2155-4ed6-a005-7e32d13b3a2b · outbound
This paper cites H.et al.Extreme temperature operation of ultra-wide bandgap AlGaN high electron mobility transistors.IEEE Transactions on Semicond.
High-temperature operation of III-nitride high-electron-mobility transistors H.et al.Extreme temperature operation of ultra-wide bandgap AlGaN high electron mobility transistors.IEEE Transactions on Semicond
Reference 17
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.942557Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0710571f-1658-4ef1-81e4-a8b1c961d53d · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 18
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.960172Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5dcc4828-5635-4022-b590-0a99d0cbe606 · outbound
This paper cites In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 40–44 (2022).
High-temperature operation of III-nitride high-electron-mobility transistors In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 40–44 (2022)
Reference 19
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.981267Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d0c18f5d-3cb3-4178-ac0b-98946266cc20 · outbound
This paper cites & Zhu, W.
High-temperature operation of III-nitride high-electron-mobility transistors & Zhu, W
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.979486Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 2d101cfa-1053-4457-8999-9f59d4018d9b · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 21
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.940860Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation a25c2ca9-6ec3-4f5f-be55-79cbe0f158d0 · outbound
This paper cites & Zhu, W.
High-temperature operation of III-nitride high-electron-mobility transistors & Zhu, W
Reference 22
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.912394Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation bc7d34c0-9179-4c8d-beb6-7c36ad77fb96 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 23
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.976191Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation ed6821bd-7cc6-4fe6-94d1-aecb799559d6 · outbound
This paper cites In2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 213–216 (IEEE, 2015).
High-temperature operation of III-nitride high-electron-mobility transistors In2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 213–216 (IEEE, 2015)
Reference 24
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.935198Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 07f5162e-f088-4c92-939c-ad725aa2dd55 · outbound
This paper cites IEEE Transactions on Electron Devices68, 1000–1005, DOI: 10.1109/TED.2021.3049764 (2021).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Transactions on Electron Devices68, 1000–1005, DOI: 10.1109/TED.2021.3049764 (2021)
Reference 25
- Resolution
- verified exact
- arxiv_id, observed 2026-07-07T18:04:00.437832Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 02069cdb-5a13-4ed5-85c1-c528a70d3147 · outbound
This paper cites H.et al.Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates.J.
High-temperature operation of III-nitride high-electron-mobility transistors H.et al.Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates.J
Reference 26
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.937467Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 68971101-d456-46b1-9afd-abcdca0b39df · outbound
This paper cites applied physics87, 334–344 (2000).
High-temperature operation of III-nitride high-electron-mobility transistors applied physics87, 334–344 (2000)
Reference 27
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.931671Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 46c4e341-306c-497e-bb80-5206978fdd75 · outbound
This paper cites & Usman, M.
High-temperature operation of III-nitride high-electron-mobility transistors & Usman, M
Reference 28
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.945947Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0a2e9d1f-b4f3-4828-8a42-6e49797fbd1c · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 29
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.951708Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 65abf688-5657-4c03-a2c6-c4ae1ac4d503 · outbound
This paper cites & Ghosal, A.
High-temperature operation of III-nitride high-electron-mobility transistors & Ghosal, A
Reference 30
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.919789Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation c01793c4-3e34-4802-9c3f-44943ba0fab6 · outbound
This paper cites In2009 Device Research Conference, 285–286 (2009).
High-temperature operation of III-nitride high-electron-mobility transistors In2009 Device Research Conference, 285–286 (2009)
Reference 31
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.977893Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 2ce1fdeb-5de1-4594-92d7-58b6b3665d02 · outbound
This paper cites S.et al.Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.Rev.
High-temperature operation of III-nitride high-electron-mobility transistors S.et al.Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.Rev
Reference 32
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.921637Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 389a749d-23be-46f8-9c52-1720d6b04f33 · outbound
This paper cites T.et al.Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor.Appl.
High-temperature operation of III-nitride high-electron-mobility transistors T.et al.Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor.Appl
Reference 33
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.968731Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 6c7cd5e4-bef8-464d-bb3b-92eee47dccf4 · outbound
This paper cites T.et al.Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates.Appl.
High-temperature operation of III-nitride high-electron-mobility transistors T.et al.Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates.Appl
Reference 34
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.917771Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 2a487d2c-1f50-4659-b99d-60fa73f99035 · outbound
This paper cites IEEE Electron Device Lett.29, 661–664 (2008).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Electron Device Lett.29, 661–664 (2008)
Reference 35
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.970848Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 94503709-e5f3-4196-91b5-c8fac75cb4a1 · outbound
This paper cites & Medjdoub, F.
High-temperature operation of III-nitride high-electron-mobility transistors & Medjdoub, F
Reference 36
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.954971Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation c67fe24f-648a-415b-b258-2f0a27381102 · outbound
This paper cites physics express3, 121003 (2010).
High-temperature operation of III-nitride high-electron-mobility transistors physics express3, 121003 (2010)
Reference 37
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.956643Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 8a5ee1d1-d8ec-44da-ba60-9ce7ea4931d7 · outbound
This paper cites letters50, 211–212 (2014).
High-temperature operation of III-nitride high-electron-mobility transistors letters50, 211–212 (2014)
Reference 38
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.950047Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation fc70cbbd-011c-4e33-a1c9-7a88a42ecd85 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 39
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.908500Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 562e3383-2f97-499a-a15b-1e8167117fd2 · outbound
This paper cites & Jimbo, T.
High-temperature operation of III-nitride high-electron-mobility transistors & Jimbo, T
Reference 40
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.966212Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 596b9e1c-4e6e-4906-b6f3-fd949831aab0 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 41
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.964041Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation fd351ca9-15d9-44c7-bd87-934576de7164 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 42
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.906879Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 9327479f-9247-4bf6-9b69-49a5db60af4b · outbound
This paper cites & Suda, J.
High-temperature operation of III-nitride high-electron-mobility transistors & Suda, J
Reference 43
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.910417Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation b80b0f12-9793-470a-9d0e-e31f4df6f818 · outbound
This paper cites In2010 IEEE International Reliability Physics Symposium, 146–151 (IEEE, 2010).
High-temperature operation of III-nitride high-electron-mobility transistors In2010 IEEE International Reliability Physics Symposium, 146–151 (IEEE, 2010)
Reference 44
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.877939Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 2f19db33-53e6-4e39-9510-c990850aaad2 · outbound
This paper cites & Kuzuhara, M.
High-temperature operation of III-nitride high-electron-mobility transistors & Kuzuhara, M
Reference 45
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.772143Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 37a81062-1fbf-4630-aacb-fc65067091f6 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 46
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.893079Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 7045fab1-e605-4d0a-b7e3-76d505481e6b · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 47
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.861763Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation fdf33d24-ceea-4aad-9420-d44f688b2096 · outbound
This paper cites G., Cai, S.
High-temperature operation of III-nitride high-electron-mobility transistors G., Cai, S
Reference 48
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.873402Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation ffda3ee4-e6b2-4f1e-a6c2-17f302c54f97 · outbound
This paper cites IEEE Electron Device Lett.(2025).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Electron Device Lett.(2025)
Reference 49
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.819128Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 4575c63d-3822-485b-9be3-d18bae17d38e · outbound
This paper cites In2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1–3 (2024).
High-temperature operation of III-nitride high-electron-mobility transistors In2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1–3 (2024)
Reference 50
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.838100Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d060299d-3063-4abb-b971-8a26eed07087 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 51
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.847873Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d9c0e152-3475-4275-a068-4a649b848162 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 52
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.858526Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 9e4a764a-f87d-4a69-9e18-607fab194b2f · outbound
This paper cites A., Miller, R.
High-temperature operation of III-nitride high-electron-mobility transistors A., Miller, R
Reference 53
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.830306Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 557f5fd7-dfc8-4677-baa8-f7805164f083 · outbound
This paper cites R.et al.Investigation of InAlN/GaN Circular Transistors for Venus and Other High-Temperature Applications.
High-temperature operation of III-nitride high-electron-mobility transistors R.et al.Investigation of InAlN/GaN Circular Transistors for Venus and Other High-Temperature Applications
Reference 54
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.843918Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 30d7b011-f2bb-4d0d-87b8-4a1e2eb284b3 · outbound
This paper cites & Roccaforte, F.
High-temperature operation of III-nitride high-electron-mobility transistors & Roccaforte, F
Reference 55
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.817302Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 4650b48c-537f-471f-808f-551c72cb31d8 · outbound
This paper cites & Lim, J.-W.
High-temperature operation of III-nitride high-electron-mobility transistors & Lim, J.-W
Reference 56
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.824986Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 791a1625-e970-4c03-864e-7f4d7aec31d2 · outbound
This paper cites R.et al.Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment.
High-temperature operation of III-nitride high-electron-mobility transistors R.et al.Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment
Reference 57
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.784139Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 6595e1ec-13c0-4980-bbe5-27f7ce738df6 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 58
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.778890Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation c44280ed-c598-4ad8-bf5f-cb9932b3acee · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 59
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.901652Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 80e77fa3-93c1-4982-866a-a64b2f46040b · outbound
This paper cites Reliab.51, 1717–1720 (2011).
High-temperature operation of III-nitride high-electron-mobility transistors Reliab.51, 1717–1720 (2011)
Reference 60
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.894905Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation efa8e0ef-a66f-4666-a277-efd1b51d1410 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 61
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.898069Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 7c7fc1ca-3b05-4d97-aa35-656002508643 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 62
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.903267Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5b9c3d0b-9e27-4123-8a35-6bfff28a325a · outbound
This paper cites & Morkoc, H.
High-temperature operation of III-nitride high-electron-mobility transistors & Morkoc, H
Reference 63
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.856720Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 52fe0c98-fa4e-4ebe-81ed-f51b6263d25d · outbound
This paper cites & Obloh, H.
High-temperature operation of III-nitride high-electron-mobility transistors & Obloh, H
Reference 64
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.854981Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5973771b-2dc5-4720-addc-af8d08a4ac45 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 65
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.775452Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 1d2b85f0-47cf-4860-9d6b-df28551dfc33 · outbound
This paper cites K.et al.p-GaN Gated HEMT with 770 I ON/I OFF Ratio Operating at 800° C.IEEE Electron Device Lett.
High-temperature operation of III-nitride high-electron-mobility transistors K.et al.p-GaN Gated HEMT with 770 I ON/I OFF Ratio Operating at 800° C.IEEE Electron Device Lett
Reference 66
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.806438Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 3dbd39bc-4212-46e5-94c0-bc5913a49680 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 67
- Resolution
- verified exact
- arxiv_id, observed 2026-07-07T18:04:00.430751Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation e9eb1b75-a341-447c-a75f-ecc34d7a97cb · outbound
This paper cites Electron Devices Soc.7, 931–935 (2019).
High-temperature operation of III-nitride high-electron-mobility transistors Electron Devices Soc.7, 931–935 (2019)
Reference 68
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.812155Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 468122ff-df0c-4a0b-b672-a1935d8d24c4 · outbound
This paper cites IEEE Electron Device Lett.44, 899–902 (2023).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Electron Device Lett.44, 899–902 (2023)
Reference 69
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.828593Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 90fb2c57-f857-4f11-b160-f3927c7a0fae · outbound
This paper cites 74.Takahashi, K., Yoshikawa, A.
High-temperature operation of III-nitride high-electron-mobility transistors 74.Takahashi, K., Yoshikawa, A
Reference 70
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.823079Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation e26000b9-282d-4898-883b-cd65de607f63 · outbound
This paper cites & Asif Khan, M.
High-temperature operation of III-nitride high-electron-mobility transistors & Asif Khan, M
Reference 71
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.791294Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 46982734-db7e-4cf6-bb50-4d75b1ab372e · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 72
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.888700Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 7717b2a7-fa3f-4955-95f7-27c75e13ba7f · outbound
This paper cites IEEE Electron Device Lett.28, 328–331 (2007).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Electron Device Lett.28, 328–331 (2007)
Reference 73
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.793046Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation b3141260-d916-4d68-bc26-eb09cfc74328 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 74
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.815646Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 3ba28cb5-2cf1-48d3-b342-55e71fb3f8bd · outbound
This paper cites Reliab.55, 1687–1691 (2015).
High-temperature operation of III-nitride high-electron-mobility transistors Reliab.55, 1687–1691 (2015)
Reference 75
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.821069Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d3393280-536b-4b3c-930c-fd0c7da15efa · outbound
This paper cites A.et al.AlGaN High Electron Mobility Transistor for High-Temperature Logic.J.
High-temperature operation of III-nitride high-electron-mobility transistors A.et al.AlGaN High Electron Mobility Transistor for High-Temperature Logic.J
Reference 76
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.826746Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d6198a55-f862-4b98-a35b-69a0e5ae51f9 · outbound
This paper cites W., Zhao, X.
High-temperature operation of III-nitride high-electron-mobility transistors W., Zhao, X
Reference 77
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.853172Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0e966482-5d95-49fc-bd5a-926b0198acd6 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 78
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.813980Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation f46b89d2-7a42-43ad-a743-6a94df40c7e7 · outbound
This paper cites & Reiner, R.
High-temperature operation of III-nitride high-electron-mobility transistors & Reiner, R
Reference 79
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.782386Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d41565b5-495a-4bd7-b6c2-994a3435e35b · outbound
This paper cites In2019 International Conference on IC Design and Technology (ICICDT), 1–4 (IEEE, 2019).
High-temperature operation of III-nitride high-electron-mobility transistors In2019 International Conference on IC Design and Technology (ICICDT), 1–4 (IEEE, 2019)
Reference 81
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.870144Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation c70ec64c-cc0c-44c3-9b65-ef44fc246049 · outbound
This paper cites In2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 1–2 (2023).
High-temperature operation of III-nitride high-electron-mobility transistors In2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 1–2 (2023)
Reference 82
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.780726Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 7d42908f-e9d8-4001-b537-b40aa7d3557c · outbound
This paper cites & Palacios, T.
High-temperature operation of III-nitride high-electron-mobility transistors & Palacios, T
Reference 83
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.863375Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 666adfce-6018-4e74-b1b4-cce69e60a7eb · outbound
This paper cites H.et al.p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.Appl.
High-temperature operation of III-nitride high-electron-mobility transistors H.et al.p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.Appl
Reference 84
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.789340Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5ab8bd2f-967a-40ef-aced-35073b408774 · outbound
This paper cites In2024 Device Research Conference (DRC), 1–2 (2024).
High-temperature operation of III-nitride high-electron-mobility transistors In2024 Device Research Conference (DRC), 1–2 (2024)
Reference 85
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.804644Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation fa6c3ac2-2046-475f-933f-14914047ed81 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 86
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.875245Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d98ed98f-420c-4a88-9314-c5da3f6bc61a · outbound
This paper cites & Zehnder, D.
High-temperature operation of III-nitride high-electron-mobility transistors & Zehnder, D
Reference 87
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.801491Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0b8c4baa-7c14-4f45-b56f-0ed120a381a6 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 88
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.871788Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 1263ba4d-aba9-4e52-8bcf-593e48b5ee48 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 89
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.798180Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 94a0253f-9241-43c8-9804-d185aea7a564 · outbound
This paper cites & Mizutani, T.
High-temperature operation of III-nitride high-electron-mobility transistors & Mizutani, T
Reference 90
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.899867Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d17acd04-ca9a-4b64-b74f-abb631ebee71 · outbound
This paper cites & Griffin, R.
High-temperature operation of III-nitride high-electron-mobility transistors & Griffin, R
Reference 91
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.810040Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 60f57392-4df7-433c-8f34-a9cc770b785f · outbound
This paper cites & Zeng, Y.
High-temperature operation of III-nitride high-electron-mobility transistors & Zeng, Y
Reference 92
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.835881Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 79eb8899-8b41-4240-8747-fa0da514b667 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 93
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.785826Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 1047c97e-d59e-4dd2-9032-3557e85cc9ae · outbound
This paper cites IEEE Access7, 184375–184384 (2019).
High-temperature operation of III-nitride high-electron-mobility transistors IEEE Access7, 184375–184384 (2019)
Reference 94
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.796466Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation a1fea7c6-fa97-40ad-975b-5d9d289a91ae · outbound
This paper cites & Ali, M.
High-temperature operation of III-nitride high-electron-mobility transistors & Ali, M
Reference 95
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.842148Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0863cea4-3f84-4a78-8f67-fb45b0d9b44d · outbound
This paper cites & Cheng, Z.
High-temperature operation of III-nitride high-electron-mobility transistors & Cheng, Z
Reference 96
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.886679Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 6479815f-fc43-40b9-a937-3900abae9a99 · outbound
This paper cites R.et al.Degradation Analysis of InAlN/GaN Transistors under Simulated Venus Surface Conditions.IEEE Transactions on Electron Devices(2025).
High-temperature operation of III-nitride high-electron-mobility transistors R.et al.Degradation Analysis of InAlN/GaN Transistors under Simulated Venus Surface Conditions.IEEE Transactions on Electron Devices(2025)
Reference 97
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.808246Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation f7baabe1-6da8-41e1-8bb2-69ab2e589048 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 98
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.851335Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 542bbea9-fe67-4562-8d30-95c519a5311b · outbound
This paper cites 43, 1842–1845 (2022).
High-temperature operation of III-nitride high-electron-mobility transistors 43, 1842–1845 (2022)
Reference 99
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-07-07T18:04:00.832052Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation df83f609-3eb2-4e1d-a5ef-e98244d58b20 · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 100
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.799813Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation b0ef4266-b740-4239-96ef-d04cabaeeaec · outbound
This paper cites an unresolved cited work.
High-temperature operation of III-nitride high-electron-mobility transistors Unresolved cited work
Reference 101
- Resolution
- unresolved
- raw_fallback, observed 2026-07-07T18:04:00.868327Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Pith citing papers
No inbound Pith citation observations are available.