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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

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arxiv 1912.09806 v1 pith:G5MQMLPW submitted 2019-12-20 cond-mat.mes-hall

L. Hutin , L. Bourdet , B. Bertrand , A. Corna , H. Bohuslavskyi , A. Amisse , A. Crippa , R. Maurand
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S. Barraud M. Urdampilleta C. Bäuerle T. Meunier M. Sanquer X. Jehl S. De Franceschi Y.-M. Niquet M. Vinet
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classification cond-mat.mes-hall
keywords controlquantumcmosconfigurationspinall-electricalback-gatecharge
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We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.

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