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Non-thermal photocoercivity effect in a ferromagnetic semiconductor

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arxiv 0810.4027 v1 pith:GLP5DDK7 submitted 2008-10-22 cond-mat.mtrl-sci

G. V. Astakhov , H. Hoffmann , V. L. Korenev , T. Kiessling , J. Schwittek , G. M. Schott , C. Gould , W. Ossau
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K. Brunner L. W. Molenkamp
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords effectferromagneticphotocoercivitysemiconductorallowingchangecoercivecorrelation
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We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

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