pith. the verified trust layer for science. sign in

arxiv: cond-mat/9909353 · v2 · pith:GOFZWWIFnew · submitted 1999-09-23 · ❄️ cond-mat.mes-hall · cond-mat.dis-nn

Metal-insulator transition in 2D: Anderson localization by temperature-dependent disorder?

classification ❄️ cond-mat.mes-hall cond-mat.dis-nn
keywords localizationtemperaturedependsmetal-insulatorscalingtransitionandersonbehavior
0
0 comments X p. Extension
Add this Pith Number to your LaTeX paper What is a Pith Number?
\usepackage{pith}
\pithnumber{GOFZWWIF}

Prints a linked pith:GOFZWWIF badge after your title and writes the identifier into PDF metadata. Compiles on arXiv with no extra files. Learn more

read the original abstract

A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that the competition between the metallic-like temperature dependence of the Drude resistivity and localization leads to a maximum (minimum) at higher (lower) temperatures. An illustration of a metal-insulator transition in the model of charged traps, whose concentration depends on temperature, is presented.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.