Interplay of magnetic ordering and charge transport in a distorted ScAl₃C₃-type GdZn₃As₃

We present the synthesis and characterization of GdZn$_3$As$_3$, a previously unreported variant of the $RM_3X_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $RM_3X_3$ compounds that crystallize in undistorted hexagonal structures, GdZn$_3$As$_3$ adopts a distorted ScAl$_3$C$_3$-type orthorhombic structure with $Cmcm$ space group. Magnetic measurements demonstrate that GdZn$_3$As$_3$ undergoes a ferromagnetic transition at the Curie temperature ($T_{\mathrm{C}}$) of 6.3~K, which is unique among known $RM_3X_3$ materials. This magnetic transition is further confirmed by specific heat and electrical resistivity measurements. GdZn$_3$As$_3$ displays metallic behavior with a pronounced resistivity peak near $T_{\mathrm{C}}$, which is strongly suppressed by magnetic fields, leading to significant negative magnetoresistance. Hall effect measurements reveal a low carrier density and a clear nonlinear anomalous Hall effect in GdZn$_3$As$_3$. Furthermore, both specific heat and resistivity data suggest the presence of additional magnetic transition(s) below $T_{\mathrm{C}}$, requiring further investigation. These results demonstrate that GdZn$_3$As$_3$ possesses distinct structural, magnetic, and electronic transport properties within the $RM_3X_3$ family, establishing it as an exceptional platform for investigating competing magnetic interactions in low-carrier-density rare-earth triangular-lattice systems.