Correct nonlinearity and hysteresis of volt-ampere characteristics of spin valves, magnetic tunnel junctions and memristors

There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the offered message the attention to discrepancy to physical principles of a hysteresis of resistance represented in publications is paid. It is schematically presented how the dependences of resistance on current should look not contradicting the energy conservation law for hysteresis dependence of resistance on current and corresponding volt-ampere characteristic.