High Frequency Microwave Emission of a Tri-layer Magnetic Tunnel Junction in the Absence of External Bias-Magnetic Field
Reviewed by Pith T0 review T1 audit T2 compute T3 formal T4 kernel pith:IWX6B2RKrecord.jsonopen to challenge →
read the original abstract
We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ containing a perpendicular free layer and an in-plane fixed layer, a second perpendicular layer has been introduced. We found that the microwave emission frequency induced by spin-transfer torque (STT) can reach as high as 6 GHz in the absence of any applied magnetic field. Moreover, microwave emission is observed for both current polarizations where a redshift is seen with increase in magnitude of current. We discuss spin-dynamics of the observed bi-directional high-frequency emission and the physical origin of the red-shift. The distinct microwave emission properties exhibited in this tri-layer MTJ structure could potentially be useful for future applications in nanoscale spintronics devices such as microwave communication and neuromorphic computing.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.