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Parallel Stitching of Two-Dimensional Materials

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arxiv 1512.04492 v1 pith:IXHI3UGJ submitted 2015-12-14 cond-mat.mtrl-sci

Xi Ling , Yuxuan Lin , Qiong Ma , Ziqiang Wang , Yi Song , Lili Yu , Shengxi Huang , Wenjing Fang
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Xu Zhang Allen L. Hsu Yaqing Bie Yi-Hsien Lee Yimei Zhu Lijun Wu Ju Li Pablo Jarillo-Herrero Mildred S. Dresselhaus Tomás Palacios Jing Kong
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classification cond-mat.mtrl-sci
keywords heterostructuresparalleltwo-dimensionalalignedapplicationarbitraryaromaticchemical
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Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.

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