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SOT-MRAM 300mm integration for low power and ultrafast embedded memories

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arxiv 1810.10356 v1 pith:KKEEZMAS submitted 2018-10-22 cond-mat.mes-hall cs.ETphysics.app-ph

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

K. Garello , F. Yasin , S. Couet , L. Souriau , J. Swerts , S. Rao , S. Van Beek , W. Kim
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E. Liu S. Kundu D. Tsvetanova N. Jossart K. Croes E. Grimaldi M. Baumgartner D. Crotti A. Furn\'emont P. Gambardella G.S. Kar
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classification cond-mat.mes-hall cs.ETphysics.app-ph
keywords integrationpowertimearchitecturescmos-compatibledemonstratedevicesembedded
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We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

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