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Viscous magnetoresistance of correlated electron liquids

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arxiv 1612.09275 v2 pith:KKH55EHW submitted 2016-12-29 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords electronmagnetoresistanceviscositycorrelatedliquidtheorytwo-dimensionalalthough
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We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables extraction of viscosity of the electron liquid from magnetotransport measurements.

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  1. Sign of viscous magnetoresistance in electron fluids

    cond-mat.str-el 2019-08 conditional novelty 6.0 of 10

    Bulk viscous electron flow has positive magnetoresistance for arbitrary inhomogeneity in one-dimensional periodic models and in weakly inhomogeneous ballistic-to-hydrodynamic crossover calculations, unlike narrow channels.

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