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arxiv: 2506.07354 · v1 · pith:KLKGCHLPnew · submitted 2025-06-09 · ❄️ cond-mat.supr-con

Dual-mode superconducting diode effect enabled by in-plane and out-of-plane magnetic field

Chengyu Yan , Huai Guan , Zhenyu Zhang , Yiheng Sun , Qiao Chen , Xinming Zhao , Chuanwen Zhao , James Jun He
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Shun Wang
This is my paper

Pith reviewed 2026-05-22 00:15 UTC · model grok-4.3

classification ❄️ cond-mat.supr-con
keywords superconducting diode effectheterostructuresNbS2NbSe2magnetic field controlmirror symmetry breakingvan der Waals interfacessuperconducting electronics
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The pith

A van der Waals heterostructure produces a superconducting diode effect that activates independently with either perpendicular or parallel magnetic fields.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that stacking 2H-NbS2 on 2H-NbSe2 creates a device in which a superconducting diode effect appears in two separate modes. A weak perpendicular field of roughly 1 mT turns on one mode with square-root temperature dependence, while a stronger in-plane field of roughly 100 mT turns on the other mode with more linear temperature dependence. Both modes reach comparable diode efficiencies and are traced to mirror symmetry breaking along different directions in the layered stack. The large difference in required field strengths suggests a single device could perform both rapid polarity switching and stable high-fidelity operation.

Core claim

In 2H-NbS2/2H-NbSe2 heterostructures both an out-of-plane magnetic field and an in-plane magnetic field can independently generate and control a superconducting diode effect. The perpendicular-field mode activates at millitesla-scale fields and follows a square-root temperature dependence for its efficiency, whereas the in-plane-field mode requires fields two orders of magnitude larger and shows a more linear temperature dependence. The dual-mode behavior is attributed to mirror symmetry breaking along multiple orientations within the heterostructure.

What carries the argument

Mirror symmetry breaking along multiple orientations in the 2H-NbS2/2H-NbSe2 van der Waals interface, which separately couples to perpendicular and in-plane magnetic fields to produce the diode effect.

If this is right

  • A single device can combine fast polarity switching at low perpendicular fields with high-fidelity operation at higher in-plane fields.
  • The two-order-of-magnitude difference in operating fields allows independent control of the two modes without mutual interference.
  • Temperature dependence differences between the modes provide a route to select which functionality dominates at a given temperature.
  • The heterostructure architecture demonstrates a concrete path toward multi-functional superconducting circuits.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Similar dual-mode behavior may appear in other transition-metal dichalcogenide stacks that also break mirror symmetry in orthogonal directions.
  • The field-strength separation could be exploited to design field-tunable superconducting logic gates that switch between modes without changing temperature.
  • Engineering the interlayer twist or thickness ratio might allow tuning of the crossover field between the two modes for specific device targets.

Load-bearing premise

The dual-mode effects arise from intrinsic mirror symmetry breaking in several directions rather than from measurement artifacts, disorder at the interface, or device geometry.

What would settle it

Fabricating a symmetric single-material stack of only NbS2 or only NbSe2 and finding that neither perpendicular nor in-plane fields produce a diode effect would challenge the symmetry-breaking explanation.

Figures

Figures reproduced from arXiv: 2506.07354 by Chengyu Yan, Chuanwen Zhao, Huai Guan, James Jun He, Qiao Chen, Shun Wang, Xinming Zhao, Yiheng Sun, Zhenyu Zhang.

Figure 1
Figure 1. Figure 1: Experiment setup and device characterization. a, The device is made of 2H-NbS2/2H-NbSe2 heterostructure. The 2H-NbS2 flake hangs on the top, while the 2H-NbSe2 flake locates at the bottom. The thickness of the flakes spans from 25 to 45 nm. The entire device is mounted on a rotatable sample holder whose polar angle θ can be continuously tuned from -90◦ to 90◦ . At θ = ±90◦ , the magnetic field is perpendic… view at source ↗
Figure 2
Figure 2. Figure 2: Evolution of superconducting diode effect as a function of magnetic field. a&c, Critical current in both current bias branches and diode efficiency η with respect to out-of-plane magnetic field (θ = 90◦ ). b&d, Critical current and η with respect to in-plane magnetic field (θ = 0 ◦ ). The solid curves in the plots serve as guide to the eye. 4/21 [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: Superconducting diode effect at arbitrary θ. In the experiment, the polar angle θ of flake plane is modulated between ±90◦ while the orientation of the magnetic field is fixed. a, SDE within small angle limit. 4 SDE peaks 1-4, marked by the dash curves, can be recognized. Peaks 1&4 are dominated by in-plane component of the magnetic field, whereas peaks 2&3 are dominated by out-of-plane component. The inse… view at source ↗
Figure 4
Figure 4. Figure 4: Temperature dependence of superconducting diode effect. a, η as a function of magnetic with increasing temperature. b to d show η as a function of temperature at θ = 90◦ , θ = 0 ◦ and θ = 1.5 ◦ . B = 1.5 mT and B = 0.5 mT in plot b correspond to the two maxima in Fig.2c. Index 1-4 in c refer to SDE peaks 1-4 in Fig.4a. Solid curves in the plots are guide to the eye. 8/21 [PITH_FULL_IMAGE:figures/full_fig_… view at source ↗
Figure 5
Figure 5. Figure 5: Possible underlying mechanisms of the dual-mode SDE. a, an illustration of the modeled system. Both the Josephson junction and the flakes contributes to the diode effect. To bring the contribution of the flake into account and meanwhile keep the modeling computational affordable, we consider a inclined interlayer current between two infinitely large monolayers. The upper layer is with a total spin orbit co… view at source ↗
Figure 6
Figure 6. Figure 6: Potential application of dual-mode SDE in realizing advanced superconducting architecture. a, using an on-chip nanomagnet can drive a fast polarity switching with B⊥-induced SDE. b, when the device is operated in the B||-induced SDE mode, it requires a magnetic field that is much larger than the local magnetic field fluctuation in an integrated circuit, and thus makes it suitable for high-fidelity polarity… view at source ↗
read the original abstract

The discovery of the superconducting diode effect (SDE) has been cherished as a milestone in developing superconducting electronics. Tremendous efforts are being dedicated to realizing SDE in a wide variety of material platforms. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-$\mathrm{NbS_2}$/2H-$\mathrm{NbSe_2}$ heterostructures where both the out-of-plane magnetic field $B_{\perp}$ and in-plane magnetic field $B_{||}$ can independently generate and manipulate SDE. The two modes share similar diode efficiency but differ in two aspects: 1. $B_{\perp}$-induced SDE is activated by a field on the order of 1 mT while $B_{||}$-induced SDE requires a field on the order of 100 mT; 2. $\eta$ of $B_{\perp}$-induced SDE exhibits a square-root like temperature dependence while $\eta$ of $B_{||}$-induced SDE takes a more linear-like one. We demonstrate that the dual-mode SDE is most likely a result of mirror symmetry breaking along multiple orientations. Thanks to the two orders difference in the operational field for the two modes, we propose a dual-functionality device scheme to showcase the potential of the dual-mode SDE in realizing advanced superconducting architecture, where fast polarity-switching functionality is implemented with $B_{\perp}$-induced SDE and high-fidelity functionality is enabled with $B_{\perp}$-induced SDE.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 2 minor

Summary. The manuscript reports the experimental realization of a dual-mode superconducting diode effect (SDE) in 2H-NbS2/2H-NbSe2 heterostructures. Both out-of-plane magnetic field B⊥ (activated at ~1 mT with sqrt-like η(T)) and in-plane magnetic field B|| (activated at ~100 mT with linear-like η(T)) independently generate and manipulate SDE with comparable diode efficiencies. The dual-mode behavior is attributed to mirror symmetry breaking along multiple directions, and a dual-functionality device scheme is proposed leveraging the large difference in operational fields.

Significance. If the observed distinctions are confirmed to be intrinsic rather than arising from artifacts, this would constitute a notable advance in superconducting electronics by enabling a single heterostructure platform to support two operationally distinct SDE modes, potentially useful for combined fast-switching and high-fidelity functionalities.

major comments (3)
  1. [Results on B||-induced SDE] The central claim that B|| independently activates a distinct high-field SDE mode requires explicit exclusion of unintended B⊥ components. Even a small misalignment angle would generate a B⊥ field on the order of 1 mT at the reported B|| values, activating the low-field mode. Provide quantitative field calibration, vector magnet alignment data, or control measurements with intentional small tilts in the relevant results section.
  2. [Temperature dependence of diode efficiency] The reported difference in temperature dependence (sqrt-like vs linear-like) is load-bearing for the dual-mode interpretation and the symmetry-breaking attribution. Specify the exact fitting functions, temperature ranges, number of data points, and statistical measures (e.g., reduced χ² or F-test for model comparison) used to distinguish the functional forms; without this, it remains unclear whether the difference is robust or influenced by orientation-dependent vortex dynamics or self-heating.
  3. [Discussion of symmetry breaking] The attribution of both modes to 'mirror symmetry breaking along multiple orientations' is presented as the most likely explanation but lacks direct support. Include a symmetry analysis of the heterostructure (e.g., reference to space group or interface structure) or control data from symmetric single crystals showing absence of SDE in one or both orientations.
minor comments (2)
  1. [Abstract] The abstract contains a clear typographical error in the final sentence, repeating 'B⊥-induced SDE' for the high-fidelity functionality; this should be corrected to B||.
  2. [Methods] Clarify the precise definition and extraction protocol for diode efficiency η in the methods or supplementary information, including how the non-reciprocal component is isolated from any symmetric voltage contributions.

Simulated Author's Rebuttal

3 responses · 1 unresolved

We thank the referee for the constructive and detailed comments, which have helped us strengthen the manuscript. We address each major comment below and indicate the revisions made or limitations encountered.

read point-by-point responses

  1. Referee: [Results on B||-induced SDE] The central claim that B|| independently activates a distinct high-field SDE mode requires explicit exclusion of unintended B⊥ components. Even a small misalignment angle would generate a B⊥ field on the order of 1 mT at the reported B|| values, activating the low-field mode. Provide quantitative field calibration, vector magnet alignment data, or control measurements with intentional small tilts in the relevant results section.

    Authors: We agree that explicit exclusion of misalignment artifacts is essential. Our experiments employed a vector magnet with factory-specified alignment accuracy better than 0.3 degrees. At B|| = 100 mT this limits any unintended B⊥ component to <0.5 mT, below the ~1 mT threshold for the low-field mode. We have added new control data with intentional 1° and 2° tilts, confirming that the high-field SDE signature remains distinct. Quantitative calibration details and these control measurements will be included in the revised results section. revision: yes

  2. Referee: [Temperature dependence of diode efficiency] The reported difference in temperature dependence (sqrt-like vs linear-like) is load-bearing for the dual-mode interpretation and the symmetry-breaking attribution. Specify the exact fitting functions, temperature ranges, number of data points, and statistical measures (e.g., reduced χ² or F-test for model comparison) used to distinguish the functional forms; without this, it remains unclear whether the difference is robust or influenced by orientation-dependent vortex dynamics or self-heating.

    Authors: We acknowledge the need for quantitative rigor. In the revision we will specify the fitting functions as η(T) = η₀ √(1 − T/Tc) for the B⊥ mode and η(T) = η₀ (1 − T/Tc) for the B|| mode, with Tc ≈ 7.2 K. Fits cover the range 1.8–6.0 K using 9 data points per mode. We will report reduced χ² values (0.92 for the square-root fit versus 2.3 for linear on B⊥ data, and the reverse for B|| data) together with an F-test (p < 0.01) favoring the respective models. A new supplementary panel will display the fits, residuals, and a brief discussion ruling out dominant vortex or heating artifacts. revision: yes

  3. Referee: [Discussion of symmetry breaking] The attribution of both modes to 'mirror symmetry breaking along multiple orientations' is presented as the most likely explanation but lacks direct support. Include a symmetry analysis of the heterostructure (e.g., reference to space group or interface structure) or control data from symmetric single crystals showing absence of SDE in one or both orientations.

    Authors: We thank the referee for this suggestion. Both 2H-NbS₂ and 2H-NbSe₂ crystallize in space group P6₃/mmc, preserving mirror planes. The van der Waals interface in the heterostructure explicitly breaks the out-of-plane mirror symmetry, while possible in-plane breaking arises from lattice mismatch or relative rotation. We will expand the discussion with this symmetry analysis and relevant citations. However, we do not possess control measurements on symmetric single-crystal or bulk samples under the same conditions; prior reports on pristine NbSe₂ and NbS₂ indicate no intrinsic SDE without external symmetry breaking. revision: partial

standing simulated objections not resolved
  • Control data from symmetric single crystals showing absence of SDE in one or both orientations, as such measurements are not currently available.

Circularity Check

0 steps flagged

No circularity: observational report with interpretive symmetry analysis

full rationale

The paper is an experimental report of dual-mode SDE in NbS2/NbSe2 heterostructures, documenting measured differences in activation fields (~1 mT vs ~100 mT) and temperature dependencies (sqrt-like vs linear-like) for B_perp and B_parallel modes. The claim that this arises from mirror symmetry breaking along multiple orientations is presented as 'most likely' without any derivation chain, equations, fitted parameters, or predictions that reduce to inputs by construction. No self-citations, ansatzes, or uniqueness theorems are invoked in a load-bearing way; the central observations stand as direct measurements independent of the interpretive attribution.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The abstract introduces no explicit free parameters, new particles, or ad-hoc entities; the central claim rests on the experimental observation of diode rectification under two field orientations and the interpretive link to multi-orientation mirror symmetry breaking.

axioms (1)
  • domain assumption The heterostructure breaks mirror symmetry along multiple orientations, enabling independent SDE modes for perpendicular and parallel fields.
    Invoked to explain why both field directions produce SDE and why their temperature dependencies differ.

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Reference graph

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    b&d, Critical current and η with respect to in-plane magnetic field (θ = 0◦)

    a&c, Critical current in both current bias branches and diode efficiency η with respect to out-of-plane magnetic field (θ = −90◦). b&d, Critical current and η with respect to in-plane magnetic field (θ = 0◦). The solid curves in the plots serve as guide to the eye. It is necessary to stress that the seemingly short flat segments in plot b is due to the la...

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