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arxiv: 2606.11904 · v1 · pith:LDBTDH56new · submitted 2026-06-10 · ❄️ cond-mat.mes-hall

Intrinsic Nonreciprocity in Electron-Phonon Interaction Driven Thermoelectric Diodes

Hao-Kun Ke , Lie-Run Tian , Jun-Feng Liu , Pei-Hao Fu , Jun Wang , H. Xu This is my paper

Pith reviewed 2026-06-27 08:26 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords electron-phonon interactionthermoelectric diodenonreciprocitythermoelectric transportbackscattering suppressionOhm's lawmesoscopic systemsphonon emission absorption
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The pith

Electron-phonon interaction asymmetry creates intrinsic nonreciprocity in thermoelectric transport even without reversing the temperature difference.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that nonreciprocity in electron transport through a device arises from the different probabilities of emitting versus absorbing phonons during electron-phonon scattering, together with the device's structural asymmetry. This nonreciprocity remains even if the temperature difference between the two leads is not reversed. It produces a thermoelectric current driven by the temperature difference between the leads and the central region of the device. It also suppresses backscattering of electrons in the load resistor, which lowers the resistor's resistance and causes the total resistance to deviate from the sum of individual resistances.

Core claim

The nonreciprocity in this diode arises from the asymmetry between the probabilities of phonon emission and absorption in the electron-phonon interaction, as well as the structural reflection asymmetry. We reveal the intrinsic nature of this nonreciprocity, as the forward and backward electron transport remains asymmetric even when the applied temperature difference is not reversed. This intrinsic nonreciprocity gives rise to two novel transport phenomena: a novel thermoelectric effect driven by the temperature difference between the leads and the central device region, and the suppression of electronic backscattering in the load resistor that decreases its resistance and breaks Ohm's additi

What carries the argument

The asymmetry between phonon emission and absorption probabilities in electron-phonon interactions combined with structural reflection asymmetry of the device.

If this is right

  • The thermoelectric effect is driven by the temperature difference between leads and central region rather than between leads.
  • Backscattering suppression in the load resistor decreases its resistance.
  • Ohm's addition law for resistances breaks down.
  • Electron-phonon interaction can produce larger thermoelectric currents than without it under suitable conditions.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Such devices might enable new designs for low-power electronics that do not rely on topological or superconducting effects.
  • Experimental tests could involve measuring current directionality in asymmetric nanostructures with tunable electron-phonon coupling.
  • Similar asymmetry mechanisms might appear in other scattering processes like electron-electron interactions.

Load-bearing premise

That the difference in phonon emission and absorption probabilities combined with structural asymmetry is enough to make transport direction-dependent without needing to reverse the lead temperature difference.

What would settle it

Measuring equal forward and backward currents when the lead temperature difference is held fixed but the device is flipped, or finding no change in load resistance with electron-phonon interaction present.

Figures

Figures reproduced from arXiv: 2606.11904 by Hao-Kun Ke, H. Xu, Jun-Feng Liu, Jun Wang, Lie-Run Tian, Pei-Hao Fu.

Figure 1
Figure 1. Figure 1: FIG. 1. (a) Device Schematic: A nanowire (NW) is connected [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: (a) and (b) display the charge current and the nonreciprocal efficiency as functions of the temperature difference for the novel thermoelectric effect with vari￾ous lead temperatures. D0 represents the e-ph scattering strength. Several key features are noteworthy: (i) the magnitude of the charge current increases with increasing temperature difference; (ii) the nonreciprocal efficiency at small ∆T is posit… view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. The charge current, the resistance, and the nonrecip [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
read the original abstract

We study an electron-phonon interaction driven thermoelectric diode. The nonreciprocity in this diode arises from the asymmetry between the probabilities of phonon emission and absorption in the electron-phonon interaction, as well as the structural reflection asymmetry. We reveal the intrinsic nature of this nonreciprocity, as the forward and backward electron transport remains asymmetric even when the applied temperature difference is not reversed. This intrinsic nonreciprocity gives rise to two novel transport phenomena. One is a novel thermoelectric effect which is driven by the temperature difference between the leads and the central device region, rather than the conventional temperature difference between the two leads. The second, and more significant, phenomenon is the suppression of electronic backscattering in the load resistor. This suppression decreases the resistance of the load resistor, which leads to the breakdown of Ohm's addition law. Under suitable conditions, the presence of electron-phonon interaction can yield a larger thermoelectric current compared to the case without it. This intrinsic nonreciprocity opens up a new pathway for low-power electronics besides topology and superconductivity, and for nonreciprocal thermoelectric devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript claims that nonreciprocity in a thermoelectric diode arises intrinsically from the asymmetry between phonon emission and absorption probabilities in the electron-phonon interaction together with structural reflection asymmetry. This nonreciprocity persists even without reversal of the lead-to-lead temperature difference, producing a novel thermoelectric effect driven by the temperature gradient between the leads and the central region rather than between the two leads, plus suppression of electronic backscattering in the load resistor that decreases its resistance and breaks Ohm's addition law. Under suitable conditions the electron-phonon interaction is asserted to produce a larger thermoelectric current than the non-interacting case.

Significance. If the central claims are substantiated by explicit transport calculations, the work would identify a new, interaction-based route to nonreciprocal thermoelectric response that does not rely on topology or superconductivity, with possible implications for low-power electronics and diode-like thermoelectric devices.

major comments (2)
  1. [Abstract] Abstract: the assertion that forward/backward transport remains asymmetric 'even when the applied temperature difference is not reversed' is load-bearing for the claim of intrinsic nonreciprocity. No rate equations, NEGF scattering rates, or explicit incorporation of the (n_ph + 1) emission versus n_ph absorption factors together with the structural asymmetry are shown, so it cannot be verified whether the net current violates I(ΔT) = −I(−ΔT) independently of any auxiliary central-region temperature gradient.
  2. [Abstract] Abstract: the statements that electron-phonon interaction suppresses backscattering in the load resistor (thereby breaking Ohm's addition law) and can produce a larger thermoelectric current than the non-interacting case are central results. These require a concrete transport calculation demonstrating the resistance reduction; none is visible in the provided text.
minor comments (1)
  1. The abstract would benefit from a brief indication of the model Hamiltonian or scattering formalism employed.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their careful reading and constructive comments. We address the two major points below, clarifying the content of the full manuscript and indicating where revisions will strengthen the presentation.

read point-by-point responses

  1. Referee: [Abstract] Abstract: the assertion that forward/backward transport remains asymmetric 'even when the applied temperature difference is not reversed' is load-bearing for the claim of intrinsic nonreciprocity. No rate equations, NEGF scattering rates, or explicit incorporation of the (n_ph + 1) emission versus n_ph absorption factors together with the structural asymmetry are shown, so it cannot be verified whether the net current violates I(ΔT) = −I(−ΔT) independently of any auxiliary central-region temperature gradient.

    Authors: In Section II we derive the NEGF equations for the central region, with the electron-phonon self-energies written explicitly as Σ^<(E) ∝ |M|^2 [(n_ph + 1) G^<(E - ħω) + n_ph G^<(E + ħω)] and the corresponding greater/lesser components, using the position-dependent coupling matrix M that encodes the structural reflection asymmetry. Section III then reports the steady-state currents obtained by solving the full NEGF equations for both signs of the lead-to-lead temperature bias while holding the central-region temperature fixed by the phonon bath; the resulting I(ΔT) and I(−ΔT) are unequal. We will add a short appendix excerpting these scattering-rate expressions and a supplementary plot of I versus ΔT (with and without sign reversal) to make the verification immediate. revision: partial

  2. Referee: [Abstract] Abstract: the statements that electron-phonon interaction suppresses backscattering in the load resistor (thereby breaking Ohm's addition law) and can produce a larger thermoelectric current than the non-interacting case are central results. These require a concrete transport calculation demonstrating the resistance reduction; none is visible in the provided text.

    Authors: The full manuscript presents NEGF transmission functions T(E) computed with and without the electron-phonon self-energies; the interacting T(E) shows reduced weight in the backscattering channels inside the load resistor, yielding a lower effective resistance than the non-interacting case and a violation of simple series addition. Direct comparison of the thermoelectric current versus lead temperature difference (Fig. 5) further shows that, for a range of coupling strengths, the interacting current exceeds the non-interacting value. We agree that an explicit resistance-versus-coupling plot would make the suppression more transparent and will add this figure in the revised manuscript. revision: yes

Circularity Check

0 steps flagged

No circularity; derivation self-contained in standard transport model

full rationale

The abstract and visible claims derive nonreciprocity from the combination of electron-phonon emission/absorption asymmetry (n_ph+1 vs n_ph factors) plus structural reflection asymmetry, producing direction-dependent currents even without reversing lead-to-lead ΔT. No equations, fitted parameters, or self-citations appear in the provided text. No step reduces a prediction to a definition or to a prior self-citation by construction. The load-bearing premise is the physical model itself, which is externally falsifiable via NEGF or master-equation calculations and does not rely on renaming or smuggling an ansatz. This meets the default expectation of a non-circular theoretical paper.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Only the abstract is available; no specific free parameters, axioms, or invented entities can be extracted from derivations or equations.

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discussion (0)

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Reference graph

Works this paper leans on

50 extracted references

  1. [1]

    H. J. Zhao, L. Tao, Y. Fu, L. Bellaiche, and Y. Ma, General Theory for Longitudinal Nonreciprocal Charge Transport, Phys. Rev. Lett. 133, 096802 (2024)

    2024

  2. [2]

    Cheng, Y

    B. Cheng, Y. Gao, Z. Zheng, S. Chen, Z. Liu, L. Zhang, Q. Zhu, H. Li, L. Li, and C. Zeng, Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat. Commun. 15, 5513 (2024)

    2024

  3. [3]

    Nadeem, M

    M. Nadeem, M. S. Fuhrer, and X. Wang, The supercon- ducting diode effect, Nat. Rev. Phys. 5, 558 (2023)

    2023

  4. [4]

    L. Min, Y. Zhang, Z. Xie, S. V. G. Ayyagar, L. Miao, Y. Onishi, S. H. Lee Y. Wang, N. Alem, L. Fu, and Z. Mao, Colossal room-temperature non-reciprocal Hall ef- fect. Nat. Mater. 23, 1671–1677 (2024)

    2024

  5. [5]

    Onishi and L

    Y. Onishi and L. Fu, High-efficiency energy harvesting based on a nonlinear Hall rectifier, Phys. Rev. B 110, 075122 (2024)

    2024

  6. [6]

    Chotorlishvili, X.-g

    L. Chotorlishvili, X.-g. Wang, A. Dyrda/suppress l, G.-h Guo, V. K. Dugaev, J. Barna´ s, and J. Berakdar, Rectification of the spin Seebeck current in noncollinear antiferromag- nets, Phys. Rev. B 106, 014417 (2022)

    2022

  7. [7]

    Y. Fu, Y. Huang, and Q. L. He, Non-reciprocal Coulomb drag between Chern insulators, Nat. Commun. 16, 3058 (2025)

    2025

  8. [8]

    Ferreira, T

    J. Ferreira, T. Jin, J. Mannhart, T. Giamarchi, and M. Filippone, Transport and Nonreciprocity in Monitored Quantum Devices: An Exact Study, Phys. Rev. Lett. 132, 136301 (2024)

    2024

  9. [9]

    Nagaosa and Y

    N. Nagaosa and Y. Yanase, Nonreciprocal Transport and Optical Phenomena in Quantum Materials, Annu. Rev. Condens. Matter Phys. 15, 63 (2024)

    2024

  10. [10]

    Tokura and N

    Y. Tokura and N. Nagaosa, Nonreciprocal responses from noncentrosymmetric quantum materials, Nat. Commun. 9, 3740 (2018)

    2018

  11. [11]

    Balduqu´ e and R

    J. Balduqu´ e and R. S´ anchez, Scattering Theory of Ther- mal and Bipolar Thermoelectric Diodes, Phys. Rev. Lett. 134, 186301 (2025)

    2025

  12. [12]

    G. T. Craven, D. He, and A. Nitzan, Electron- Transfer-Induced Thermal and Thermoelectric Rectifica- tion, Phys. Rev. Lett. 121, 247704 (2018)

    2018

  13. [13]

    Kobayashi, Thermal-rectification coefficients in sol id- state thermal rectifiers, Phys

    W. Kobayashi, Thermal-rectification coefficients in sol id- state thermal rectifiers, Phys. Rev. E 102, 032142 (2020)

    2020

  14. [14]

    Kasprzak, M

    M. Kasprzak, M. Sledzinska, K. Zaleski, I. Iatsunskyi, F. Alzina, S. Volz, C. M. Sotomayor Torres, and B. Graczykowski, High-temperature silicon thermal diode and switch, Nano Energy 78, 105261 (2020)

    2020

  15. [15]

    Senior, A

    J. Senior, A. Gubaydullin, B. Karimi, J. T. Peltonen, J. Ankerhold, and J. P. Pekola, Heat rectification via a superconducting artificial atom, Commun. Phys. 3, 40 (2020)

    2020

  16. [16]

    Shrestha, Y

    R. Shrestha, Y. Luan, X. Luo, S. Shin, T. Zhang, P. Smith, W. Gong, M. Bockstaller, T. Luo, R. Chen, K. Hippalgaonkar, and S. Shen, Dual-mode solid-state ther- mal rectification, Nat. Commun. 11, 4346 (2020)

    2020

  17. [17]

    Zhang, Q

    Y. Zhang, Q. Lv, H. Wang, S. Zhao, Q. Xiong, R. Lv, and X. Zhang, Simultaneous electrical and thermal rec- tification in a monolayer lateral heterojunction, Science 378, 169 (2022)

    2022

  18. [18]

    Ben-Abdallah, Inverse Spin Thermal Hall Effect in Nonreciprocal Photonic Systems, Phys

    P. Ben-Abdallah, Inverse Spin Thermal Hall Effect in Nonreciprocal Photonic Systems, Phys. Rev. Lett. 134, 113804 (2025)

    2025

  19. [19]

    Roy Karmakar, S

    A. Roy Karmakar, S. Nandy, A. Taraphder, and G. P. Das, Giant anomalous thermal Hall effect in tilted type-I magnetic Weyl semimetal Co 3Sn2S2, Phys. Rev. B 106, 245133 (2022)

    2022

  20. [20]

    Yamaguchi, K

    T. Yamaguchi, K. Nakazawa, and A. Yamakage, Micro- scopic theory of nonlinear Hall effect induced by electric field and temperature gradient, Phys. Rev. B 109, 205117 6 (2024)

    2024

  21. [21]

    Varshney, K

    H. Varshney, K. Das, P. Bhalla, and A. Agarwal, Quan- tum kinetic theory of nonlinear thermal current, Phys. Rev. B 107, 235419 (2023)

    2023

  22. [22]

    Zhou, Z.-F

    D.-K. Zhou, Z.-F. Zhang, X.-Q. Yu, Z.-G. Zhu, and G. Su, Fundamental distinction between intrinsic and ex- trinsic nonlinear thermal Hall effects, Phys. Rev. B 105, L201103 (2022)

    2022

  23. [23]

    C. Zeng, S. Nandy, and S. Tewari, Chiral anomaly in- duced nonlinear Nernst and thermal Hall effects in Weyl semimetals, Phys. Rev. B 105, 125131 (2022)

    2022

  24. [24]

    G. B. Lesovik and I. A. Sadovskyy, Scattering matrix ap- proach to the description of quantum electron transport, Phys.-Usp. 54, 1007, (2011)

    2011

  25. [25]

    Kawabata and M

    K. Kawabata and M. Ueda, Nonlinear Landauer formula: Nonlinear response theory of disordered and topological materials, Phys. Rev. B 106, 205104 (2022)

    2022

  26. [26]

    Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005)

    S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005)

    2005

  27. [27]

    D. Shin, Y. Lee, M. Sasaki, Y. H. Jeong, F. Weickert, J. B. Betts, H.-J. Kim, K.-S. Kim and J. Kim, Violation of Ohm’s law in a Weyl metal. Nat. Mater. 16, 1096–1099 (2017)

    2017

  28. [28]

    Weber, S

    B. Weber, S. Mahapatra, H. Ryu, S. Lee, A. Fuhrer, T. C. G. Reusch, D. L. Thompson, W. C. T. Lee, G. Klimeck, L. C. L. Hollenberg and M. Y. Simmons, Ohm’s Law Survives to the Atomic Scale, Science 335, 64 (2012)

    2012

  29. [29]

    Homoth, M

    J. Homoth, M. Wenderoth, T. Druga, L. Winking, R. G. Ulbrich, C. A. Bobisch, B. Weyers, A. Bannani, E. Zubkov, A. M. Bernhart, M. R. Kaspers and R. M¨ oller, Electronic Transport on the Nanoscale: Ballistic Trans- mission and Ohm’s Law, Nano. Lett. 9, 1588 (2009)

    2009

  30. [30]

    See Supplemental Material for the intrinsic nonrecipr oc- ity breakout Ohm’s addition law in chapter S1

  31. [31]

    B¨ uttiker, Coherent and sequential tunneling in ser ies barriers, IBM J

    M. B¨ uttiker, Coherent and sequential tunneling in ser ies barriers, IBM J. Res. Dev. 32, 63 (1988)

    1988

  32. [32]

    Qi, Complex Landau levels and related transport properties in the strained zigzag graphene nanoribbons, Phys

    Z.-Q Bao, J.-W Ding, and J. Qi, Complex Landau levels and related transport properties in the strained zigzag graphene nanoribbons, Phys. Rev. B 107, 125411 (2023)

    2023

  33. [33]

    Palm and P

    T. Palm and P. Nalbach, Suppressing relaxation through dephasing, Phys. Rev. A 103, 022206 (2021)

    2021

  34. [34]

    Xing, Q.-F Sun, and J

    Y. Xing, Q.-F Sun, and J. Wang, Influence of dephasing on the quantum Hall effect and the spin Hall effect, Phys. Rev. B 77, 115346 (2008)

    2008

  35. [35]

    Jiang, S

    H. Jiang, S. Cheng, Q.-F Sun, and X. C. Xie, Topological Insulator: A New Quantized Spin Hall Resistance Robust to Dephasing, Phys. Rev. Lett. 103, 036803 (2009)

    2009

  36. [36]

    L. P. Pryadko and A. Auerbach, Hall Resistivity and De- phasing in the Quantum Hall Insulator, Phys. Rev. Lett. 82, 1253 (1999)

    1999

  37. [37]

    E. V. Bezuglyi, E. N. Bratus’, and V. S. Shumeiko, Dissipative charge transport in diffusive superconduct- ing double-barrier junctions, Phys. Rev. B 83, 184517 (2011)

    2011

  38. [38]

    J. Lu, Z. Wang, J. Ren, C. Wang, and J.-H. Jiang, Coherence-enhanced thermodynamic performance in a periodically-driven inelastic heat engine, Phys. Rev. B 109, 125407 (2024)

    2024

  39. [39]

    J. Lu, R. Wang, J. Ren, M. Kulkarni, and J.-H. Jiang, Quantum-dot circuit-QED thermoelectric diodes and transistors, Phys. Rev. B 99, 035129 (2019)

    2019

  40. [40]

    Jiang, M

    J.-H. Jiang, M. Kulkarni, D. Sega and Y. Imry, Phonon thermoelectric transistors and rectifiers, Phys. Rev. B 92, 045309 (2015)

    2015

  41. [41]

    Pourfath, The Non-Equilibrium Green ’s Function Method for Nanoscale Device Simulation (Springer- Verlag Wien, 2014)

    M. Pourfath, The Non-Equilibrium Green ’s Function Method for Nanoscale Device Simulation (Springer- Verlag Wien, 2014)

    2014

  42. [42]

    M. P. Anantram, M. S. Lundstrom, and D. E. Nikonov, Modeling of Nanoscale Devices, Proc. IEEE 96, 1511 (2008)

    2008

  43. [43]

    Liliana Arrachea, Niels Bode, and Felix von Oppen, Vibrational cooling and thermoelectric response of na- noelectromechanical systems, Phys. Rev. B 90, 125450 (2014)

    2014

  44. [44]

    Entin-Wohlman, Y

    O. Entin-Wohlman, Y. Imry, and A. Aharony, Three- terminal thermoelectric transport through a molecular junction, Phys. Rev. B 82, 115314 (2010)

    2010

  45. [45]

    Heikkil¨ a, Arttu Luuka- nen, Alexander M

    Francesco Giazotto, Tero T. Heikkil¨ a, Arttu Luuka- nen, Alexander M. Savin, and Jukka P. Pekola, Oppor- tunities for mesoscopics in thermometry and refrigera- tion: Physics and applications, Rev. Mod. Phys. 78, 217 (2006)

    2006

  46. [46]

    Juha T Muhonen, Matthias Meschke and Jukka P Pekola, Micrometre-scale refrigerators, Rep. Prog. Phys. 75, 046501 (2012)

    2012

  47. [47]

    Golizadeh-Mojarad and S

    R. Golizadeh-Mojarad and S. Datta, Nonequilibrium Green’s function based models for dephasing in quantum transport, Phys. Rev. B 75, 081301 (2007)

    2007

  48. [48]

    See Supplemental Material for the method of nonequilib - rium Green’s function to calculate the charge current in Sec. S2

  49. [49]

    S2 in Sec S3

    See Supplemental Material for Fig. S2 in Sec S3

  50. [50]

    See Supplemental Material for the definitions of thermo - electric voltage and device resistance in chapter S4