Phase Diagram of Bi₂Sr₂CaCu₂O_{8+δ} Revisited

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level $p$. In most materials, $p$ cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, $T_\mathrm{c}$, using the assumption that $T_\mathrm{c}$ dependence on doping is universal. Here, we present angle-resolved photoemission studies of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, cleaved and annealed in vacuum or in ozone to reduce or increase the doping from the initial value corresponding to $T_\mathrm{c}=91$ K. We show that $p$ can be determined from the underlying Fermi surfaces and that $in-situ$ annealing allows mapping of a wide doping regime, covering the superconducting dome and the non-superconducting phase on the overdoped side. Our results show a surprisingly smooth dependence of the inferred Fermi surface with doping. In the highly overdoped regime, the superconducting gap approaches the value of $2\Delta_0=(4\pm1)k_\mathrm{B}T_\mathrm{c}$