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Growth and transport properties under high pressure of PrOBiS2 single crystals

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arxiv 1904.09402 v1 pith:MD6XSQBB submitted 2019-04-20 cond-mat.supr-con

Masanori Nagao , Akira Miura , Ryo Matsumoto , Yuki Maruyama , Satoshi Watauchi , Yoshihiko Takano , Kiyoharu Tadanaga , Isao Tanaka This is my paper · ORCID
classification cond-mat.supr-con
keywords crystalsprobis2singlegrownhighpropertiestransportunder
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PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport properties under high pressures up to 50 GPa ensured semiconducting behavior for 2-300 K using a diamond anvil cell.

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