SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration | Paper Citation Record

Observation 466ba9ef-99b6-41e7-85e2-c149cd49db2d · outbound

This paper cites Ocean Worlds, Water in the Solar System and Beyond.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Ocean Worlds, Water in the Solar System and Beyond

Reference 1

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Observation 4a6fea40-8f2f-47ef-a631-5383c74871ce · outbound

This paper cites Hendrix, and et.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Hendrix, and et

Reference 2

Resolution: verified exact; raw_fallback, observed 2026-08-12T13:36:40.159405Z

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Observation 443ca1c6-d7a7-49e6-9408-6ebe89b6f974 · outbound

This paper cites Europa: Facts,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Europa: Facts,

Reference 3

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Observation e49add03-da5c-45e3-8d37-aa79d3694467 · outbound

This paper cites Cassini at Enceladus: Overviews.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Cassini at Enceladus: Overviews

Reference 4

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Observation 591d936b-c9e7-455c-a423-f402b5d3d453 · outbound

This paper cites Titan: Facts,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Titan: Facts,

Reference 5

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Observation 32bc01f7-c586-493b-9dfb-3c7697dacd8f · outbound

This paper cites Ganymede: Facts,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Ganymede: Facts,

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.769608Z

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Observation ad350bf6-8f6f-4958-8dda-32a77a3deb39 · outbound

This paper cites Callisto is the most heavily cratered object in our solar system,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Callisto is the most heavily cratered object in our solar system,

Reference 7

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Observation a7328bf3-37bb-480f-8620-cb6d548ddc19 · outbound

This paper cites Europa Clipper’s Mapping Imaging Spectrometer Installed on Spacecraft,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Europa Clipper’s Mapping Imaging Spectrometer Installed on Spacecraft,

Reference 8

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Observation d99c73ab-6b8f-4030-a91c-d667f086c115 · outbound

This paper cites Taste of the Ocean on Europa’s Surface (Artist’s Concept),.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Taste of the Ocean on Europa’s Surface (Artist’s Concept),

Reference 9

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Observation bc2f70ec-18e5-47c0-bdf1-3aff3c2e3d0a · outbound

This paper cites Final fiscal year 2019 budget bill secures $21.5 billion for NASA,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Final fiscal year 2019 budget bill secures $21.5 billion for NASA,

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.722351Z

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Observation dba8392b-1153-4e2d-ae17-fcf05a4ddea3 · outbound

This paper cites Design for ASIC Reliability for Low-Temperature Applications,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Design for ASIC Reliability for Low-Temperature Applications,

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.710284Z

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Observation 059ef78a-6534-4dce-b3aa-5066d990df37 · outbound

This paper cites Lifetime Studies of 130nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Lifetime Studies of 130nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments,

Reference 12

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Observation 6fc55ff2-6de8-4184-9dbc-f7bc264f24c7 · outbound

This paper cites Environmentally-Invariant Silicon-Germanium Electronics for On-Surface Exploration of Ocean Worlds,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Environmentally-Invariant Silicon-Germanium Electronics for On-Surface Exploration of Ocean Worlds,

Reference 13

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Observation 4364c231-53ca-4e59-ac25-b1eb3952b587 · outbound

This paper cites A Low Power, Rad-Hard, ECL Standard Cell Library,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration A Low Power, Rad-Hard, ECL Standard Cell Library,

Reference 14

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Observation a535cd7c-c7cf-4443-b2c3-13449bd4a6bb · outbound

This paper cites Low Temperature CMOS-A Brief Review,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Low Temperature CMOS-A Brief Review,

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.649595Z

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Observation 80b2c6e0-4a77-4016-88cd-7417dae0320b · outbound

This paper cites Challenges for Future Cryo- genic Electronics,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Challenges for Future Cryo- genic Electronics,

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.636791Z

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Observation 1e6858e6-af20-4a1f-b8a2-375c729bc76b · outbound

This paper cites Cryogenic Electronics Development for High-Energy Physics,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Cryogenic Electronics Development for High-Energy Physics,

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.622980Z

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Observation 9c3a4b85-773c-404d-b987-3d55b77fabeb · outbound

This paper cites LAr TPC Electronics CMOS Lifetime at 300K and 77K and Reliability Under Thermal Cycling,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration LAr TPC Electronics CMOS Lifetime at 300K and 77K and Reliability Under Thermal Cycling,

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.609731Z

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Observation 51e163ba-292c-42b1-8e26-a08391ea1910 · outbound

This paper cites Hot Carrier Study of MOSFET at 300K and 77K,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Hot Carrier Study of MOSFET at 300K and 77K,

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.594952Z

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Observation 9373a7b3-e1e9-4046-9750-311f0dc43a26 · outbound

This paper cites Analog IC Reliability in Nanometer CMOS (Analog Circuits and Signal Processing),.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Analog IC Reliability in Nanometer CMOS (Analog Circuits and Signal Processing),

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.581861Z

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Observation 0f499918-ad11-4653-aebb-d096656799d9 · outbound

This paper cites Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2K,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2K,

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.569037Z

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Observation be0be2b3-1cca-48c6-897b-ba4a582771e8 · outbound

This paper cites CMOS reliability issues for emerging cryogenic Lunar electronics applications,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration CMOS reliability issues for emerging cryogenic Lunar electronics applications,

Reference 23

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Observation 2064219f-d608-4d54-842f-e8d5338e72e6 · outbound

This paper cites Lucky-electron model of channel hot electron injection in MOSFET’s,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Lucky-electron model of channel hot electron injection in MOSFET’s,

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.542280Z

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Observation 138da8f2-9a7c-4cca-9c06-921de4229454 · outbound

This paper cites Hot-electron-induced MOSFET degradation-model, monitor, and improvement,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Hot-electron-induced MOSFET degradation-model, monitor, and improvement,

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.527392Z

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Observation 9efca000-4b04-4b1e-a59d-555002d7adc2 · outbound

This paper cites Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics,

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.513217Z

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Observation c2a4ebac-463a-4133-8a8d-73f0018e1435 · outbound

This paper cites Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications,

Reference 27

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Observation 57834639-5888-45e8-a026-371369a62aa8 · outbound

This paper cites Radiation Effects in SiGe Technology,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Radiation Effects in SiGe Technology,

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.661991Z

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Observation abd1dc7f-094f-4b45-af6e-3303be3c5eeb · outbound

This paper cites Silicon-Germanium Heterojunction Bipolar Transistors,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Silicon-Germanium Heterojunction Bipolar Transistors,

Reference 29

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.484617Z

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Observation 20422714-c2fe-4190-9427-58ebb0af2504 · outbound

This paper cites On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds,

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.470372Z

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Observation 347b8446-1145-4622-94c5-2b0b8e409eed · outbound

This paper cites The Silicon-Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained Layer Epitaxy,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration The Silicon-Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained Layer Epitaxy,

Reference 31

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Observation ca6e268e-bee3-4daf-8224-640b23347a80 · outbound

This paper cites On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications—Part I: Transistor dc design considerations,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications—Part I: Transistor dc design considerations,

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.440822Z

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Observation 43629cf0-0d79-4ad4-a9db-08aaeefab157 · outbound

This paper cites On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications—Part II: Circuit performance issues,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications—Part II: Circuit performance issues,

Reference 33

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.426909Z

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No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 67cd2438-f9ac-4c15-a4bf-26e1d61abed5 · outbound

This paper cites An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation,

Reference 34

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.413686Z

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No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 73754704-89fc-49eb-9c25-cbbeda60fe2c · outbound

This paper cites Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime,

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.399559Z

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Observation 9de14ede-1e8f-4586-a243-15263ba7aa58 · outbound

This paper cites Cryogenic operation of third-generation, 200 GHz peak fT , silicon-germanium het- erojunction bipolar transistors,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Cryogenic operation of third-generation, 200 GHz peak fT , silicon-germanium het- erojunction bipolar transistors,

Reference 36

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.384098Z

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Observation 66ef1e42-b65d-4e61-9ada-436812825ed8 · outbound

This paper cites SiGe profile optimization for improved cryogenic operation at high injection,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration SiGe profile optimization for improved cryogenic operation at high injection,

Reference 38

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.357516Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation ca1411d3-2c9e-4d42-a9bd-32c631c4aafc · outbound

This paper cites Temperature scalable modeling of SiGe HBT dc currents down to 43 K,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Temperature scalable modeling of SiGe HBT dc currents down to 43 K,

Reference 39

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.344374Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5e19389f-48be-4a6b-8370-bb270eb0d7c6 · outbound

This paper cites An investigation of negative differential resistance and novel collector current kink effects in SiGe HBTs operating at cryogenic temperatures,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration An investigation of negative differential resistance and novel collector current kink effects in SiGe HBTs operating at cryogenic temperatures,

Reference 40

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.370530Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation a9b438d0-a0da-4019-82e9-041405548aa0 · outbound

This paper cites Europa Lander,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Europa Lander,

Reference 41

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.330475Z

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No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation e31d9a7c-61b6-47d2-b749-0101336d3d33 · outbound

This paper cites Europa’s near-surface radiation environment,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Europa’s near-surface radiation environment,

Reference 42

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.318664Z

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Observation 93a247f8-0e99-41c0-93c3-0bb374b68a9c · outbound

This paper cites Radiation Effects in MOS Oxides,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Radiation Effects in MOS Oxides,

Reference 43

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.303881Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation d202b486-d97c-450b-97d4-db8ca55a0d66 · outbound

This paper cites an unresolved cited work.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Unresolved cited work

Reference 44

Resolution: verified exact; raw_fallback, observed 2026-08-12T13:36:40.065232Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation c91566be-8175-4d03-b292-7dc5b7f5c78c · outbound

This paper cites Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs,

Reference 45

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.291406Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 1a389e85-9598-4991-9fd7-94bd47e798ab · outbound

This paper cites Ionizing radiation tolerance of high-performance SiGe HBTs grown by UHV/CVD,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Ionizing radiation tolerance of high-performance SiGe HBTs grown by UHV/CVD,

Reference 46

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.277151Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5ef30b81-00c2-440d-a2f7-e06303827909 · outbound

This paper cites An investigation of the spatial location of proton-induced traps in SiGe HBTs,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration An investigation of the spatial location of proton-induced traps in SiGe HBTs,

Reference 47

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.263422Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 284cb9f8-ebdb-4cc4-8f53-4d0e7108f2f3 · outbound

This paper cites The effects of proton irradiation on the RF performance of SiGe HBT’s,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration The effects of proton irradiation on the RF performance of SiGe HBT’s,

Reference 48

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.248847Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 8472bad5-b8ce-41d2-8fa9-9606d1ce455a · outbound

This paper cites An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations,

Reference 49

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.234791Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation dbf27c96-3a2d-4931-a725-253f4974253e · outbound

This paper cites Comparison of gamma and proton radiation damage in 200 GHz SiGe HBTs,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration Comparison of gamma and proton radiation damage in 200 GHz SiGe HBTs,

Reference 50

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.219286Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 67bbbc6d-1976-4a83-8210-b95b9f7fc235 · outbound

This paper cites An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs,

Reference 51

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.203282Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation d141900c-b9db-4a88-a0e5-4ed481571345 · outbound

This paper cites The effects of irradiation temperature on the proton response of SiGe HBTs,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration The effects of irradiation temperature on the proton response of SiGe HBTs,

Reference 52

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.188130Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation b82f3fea-21d6-4085-839b-e3ae64d82b12 · outbound

This paper cites BiCMOS9HP PROCESS DESIGN KIT Model Reference Guide,.

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration BiCMOS9HP PROCESS DESIGN KIT Model Reference Guide,

Reference 53

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:36:40.173752Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

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Reference resolution

Outbound references

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