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Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters
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GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined.
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Cited by 1 Pith paper
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Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters
An acoustic phonon model with a finite Debye temperature fits the measured linewidth broadening of GaN defect emitters as well as the previously proposed optical phonon model.
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