Silicon-Oxide Interfaces: Structure and Electronic Properties
classification
❄️ cond-mat.mtrl-sci
keywords
electronicinterfaceinterfacespropertiesstructuralapproachesarchetypicalcharge
read the original abstract
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.