Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-07-14T12:11:49.273732Z
Paper Citation Record · LEDGER
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin
As of 16 August 2026, this Paper Citation Record lists 7 of 7 outbound references and 0 inbound Pith citation observations for arXiv:2607.10378.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
7 of 7 outbound references displayed
- verified exact0
- verified fuzzy0
- unresolved7
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 1fe7721d-d3e6-4e8d-89fe-10f7bf3be6bd · outbound
This paper cites β‐Gallium Oxide Devices: Progress and Outlook,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin β‐Gallium Oxide Devices: Progress and Outlook,
Reference 1
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation ddd2488d-1735-48f7-9d07-5dbcafe921a8 · outbound
This paper cites Toward emerging gallium oxide semiconductors: A roadmap,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin Toward emerging gallium oxide semiconductors: A roadmap,
Reference 2
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation fff5b4a8-3fcc-4785-8ad0-ac74fe65b94d · outbound
This paper cites Ga2O3 Schottky barrier diodes with n -Ga2O3 drift layers grown by HVPE,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin Ga2O3 Schottky barrier diodes with n -Ga2O3 drift layers grown by HVPE,
Reference 3
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation bee36bd2-2130-455d-913b-430e4a159284 · outbound
This paper cites Ultra-wide bandgap semiconductor Ga2O3 power diodes,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin Ultra-wide bandgap semiconductor Ga2O3 power diodes,
Reference 4
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation b84816cf-59a6-43ea-9eb5-688fd3ab11c5 · outbound
This paper cites Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy,
Reference 5
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation bb590fbf-5395-450b-8ca5-e822fbd26da8 · outbound
This paper cites High -quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin High -quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant,
Reference 6
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 3cff55d5-f68c-4e68-aa56-eb822f99e6d9 · outbound
This paper cites Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model,.
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model,
Reference 7
- Resolution
- unresolved
- no resolver link, observed 2026-07-14T12:11:49.273732Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Pith citing papers
No inbound Pith citation observations are available.