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The effect of doping on the lattice parameter and properties of cubic boron nitride

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arxiv 2012.12134 v1 pith:OTQXHG4Y submitted 2020-12-22 cond-mat.mtrl-sci

Vladimir A. Mukhanov , Alexandre Courac , Vladimir L. Solozhenko This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords boroncubicdopingnitrideberylliumeffectlatticeproperties
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The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and EPR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100{\deg}C in comparison with the conventional synthesis from melts of the Mg-B-N system at 4.2 GPa and 1400{\deg}C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.

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