arxiv: 1210.5047 · v1 · pith:PJSKI54Jnew · submitted 2012-10-18 · ❄️ cond-mat.mtrl-sci

Efficiently Engineered Room Temperature Single Photons in Silicon Carbide

S. Castelletto , B. C. Johnson , N. Stavrias , T. Umeda , T. Ohshima This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords singlephotonsourcescarbidedefectsquantumroomsilicon

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We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum information, computation and photonic applications. The maximum single photon count rate detected is 700k counts/s with an inferred quantum efficiency around 70%. The single photon sources are due to intrinsic deep level defects constituted of carbon antisite-vacancy pairs. These are shown to be formed controllably by electron irradiation. The variability of the temporal kinetics of these single defects is investigated in detail.

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Efficiently Engineered Room Temperature Single Photons in Silicon Carbide

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