High-temperature Phonon Coherence and Tunneling Effect in Semiconductor Superlattices

Phonons, the quanta of lattice vibrations, are primary heat carriers for semiconductors and dielectrics. The demand of effective phonon manipulation urgently emerges, because the thermal management is crucial for the ongoing development of micro/nano semiconductor devices towards higher integration and power densities1, 2. Phonons also show wave-particle duality, while they are commonly treated as particle flows in current semiconductor structures3, 4. However, it sees constraints when the structure size reduces to nano and atomic scales, where the wave behavior of phonons begins to dominate, and studies of these phonon behaviors and their manipulations become long-standing challenges in experiments5. Here we show the experimental realization of coherent phonon transport, a wave-based thermal conduction fashion, in semiconductor structures. We report the successful observation of robust phonon coherence and tunneling effect in InAs/AlAs superlattices over an extensive temperature range up to 500 K, a breakthrough towards practical-application temperature for semiconductors compared with cryogenic conditions6. Our results demonstrate that the phonon coherence is robust even at a record-high interface density due to the dominating long-wavelength phonons, and the first-principles calculations clearly reveal their wave-particle duality. This revelation heralds a promising pathway towards efficient thermal phonon engineering at extreme scales, holding implications for a broad spectrum of semiconductor device applications, including microelectronics, optoelectronics, and thermoelectrics.