pith. sign in

arxiv: 1801.02153 · v1 · pith:QMETAC5Vnew · submitted 2018-01-07 · ❄️ cond-mat.mes-hall

Theoretical investigation of charge transport in germanium doped phosphorene nanoribons using DFT + NEGF

classification ❄️ cond-mat.mes-hall
keywords beenbiastransportapplicationschargegermaniumstructuresstudied
0
0 comments X
read the original abstract

New two diemensional structures nanoribbon including phosphorus and germanium atoms are introduced for the nanoelectronic applications. Under various bias voltages, the electronic transport in the systems have been studied within the noneqilibrium Green's function formalism. The $I-V$ characteristics have been extracted. DOS and $T(E,V_{bias})$ have been investigated and show that the charge transport occurs when the bias voltage reaches about 1 \textit{V}. The calculated MPSH shows that the spatial distribution of orbital levels has been affected by the electrodes. The studied structures have a bandgap of about 0.7 \textit{eV} which absorbs light in the visible range and thus could be an interesting contender for solar cells applications.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.