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Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

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arxiv 1101.5316 v1 pith:QPTYNT56 submitted 2011-01-27 cond-mat.quant-gas cond-mat.mes-hall

Jean-Sebastian Tempel , Franziska Veit , Marc A{ss}mann , Lars Erik Kreilkamp , Arash Rahimi-Iman , Andreas Löffler , Sven Höfling , Stephan Reitzenstein
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Lukas Worschech Alfred Forchel Manfred Bayer
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classification cond-mat.quant-gascond-mat.mes-hall
keywords behavioremissionlasingmodephotontwo-thresholdbaredispersion
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We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. In particular, we show that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration.

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