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Paper Citation Record · LEDGER

Influence of chemical stability on the fabrication of MnGa-based devices

As of 16 August 2026, this Paper Citation Record lists 18 of 18 outbound references and 0 inbound Pith citation observations for arXiv:1908.06536.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.06536 v1

Coverage vector

measured 18 of 18 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T12:43:32.506307Z

measured 18 of 18 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-15T06:32:42.880941+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

18 of 18 outbound references displayed

  • verified exact0
  • verified fuzzy16
  • unresolved2
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 27e8ed64-6678-411e-853a-79e1a1aa5a63 · outbound

This paper cites Perpendicularly magnetized MnxGa films: a kind of promising material for future spintronic devices, magnetic recording and permanent magnets.

Influence of chemical stability on the fabrication of MnGa-based devices Perpendicularly magnetized MnxGa films: a kind of promising material for future spintronic devices, magnetic recording and permanent magnets

Reference 1

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:33.082497Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.175803Z digest=sha256:d969e490bd5c2104dd9fd65885ec3a33a7331f9ee5cc8f62c22f569bc101fae6

Observation 5c598ca1-b8f9-4583-94ef-f678e852d83b · outbound

This paper cites Recent progress in perpendicularly magnetized Mn -based binary alloy films.

Influence of chemical stability on the fabrication of MnGa-based devices Recent progress in perpendicularly magnetized Mn -based binary alloy films

Reference 2

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verified fuzzy
raw_fallback, observed 2026-08-14T12:43:33.001671Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.181723Z digest=sha256:b624e1441b49f38991ed5907fdd5603cde4a0e39d84691f95713f1f90d0ef12e

Observation 460deb1a-4f08-4e92-bf48-6d7abb63eefa · outbound

This paper cites Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films.

Influence of chemical stability on the fabrication of MnGa-based devices Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films

Reference 3

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verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.925444Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.200457Z digest=sha256:cee19e19d6be11c52a531b7a17dbe2ecb07ab392a667213b1e86c09be45bfef2

Observation 9c57d728-1bef-46e3-8fd5-85be186ff021 · outbound

This paper cites Multifunctional L10- Mn1.5Ga Films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

Influence of chemical stability on the fabrication of MnGa-based devices Multifunctional L10- Mn1.5Ga Films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product

Reference 4

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.909830Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.216860Z digest=sha256:71be10b7f43dc7546421d762724e3d9ad0c96fe711a06611b184e66132266b80

Observation c00c3aa0-6920-401b-b77a-f14028b6c10b · outbound

This paper cites Tailoring magnetism of multifunctional Mn xGa films with 3 giant perpendicular anisotr opy.

Influence of chemical stability on the fabrication of MnGa-based devices Tailoring magnetism of multifunctional Mn xGa films with 3 giant perpendicular anisotr opy

Reference 5

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.894284Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.249272Z digest=sha256:f878de11536836f2e82614ec4c399fcd6e3eeb3ce46f1d26a297760fc8763794

Observation 3348ad33-8633-4b6d-bfd5-4cfc87ddbe1c · outbound

This paper cites Long-Lived Ultrafast Spin Precession in Manganese Alloys Films with a Large Perpendicular Magnetic Anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Long-Lived Ultrafast Spin Precession in Manganese Alloys Films with a Large Perpendicular Magnetic Anisotropy

Reference 6

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.879288Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.285239Z digest=sha256:0a33c9fc8cae76d7a856f252da69ae48162c86bb6890ce342e4202c0ac4f0b6c

Observation 56cfcbde-eeb2-4881-9961-c8c545533436 · outbound

This paper cites Ferromagnetic δ-Mn1−xGax thin films with perpendicular anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Ferromagnetic δ-Mn1−xGax thin films with perpendicular anisotropy

Reference 7

Resolution
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raw_fallback, observed 2026-08-14T12:43:32.863344Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.306462Z digest=sha256:b796475b893c292a442e46e2f4f2bf722f9912764caedfa1e051e2a3857f9225

Observation 1c554663-8d9f-4272-a8a3-e949e089a73c · outbound

This paper cites Composition-tuned magneto -optical Kerr effect in L10- MnxGa films with giant perpendicular anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Composition-tuned magneto -optical Kerr effect in L10- MnxGa films with giant perpendicular anisotropy

Reference 8

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.846271Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.326020Z digest=sha256:9ca84c3be32a8a8d7521e342468c5d06a34d8aa85b6c40758e5ec4973d2b399a

Observation 63bc6dbe-5fcb-49dd-ac58-91c64c2bf7be · outbound

This paper cites Magnetoresistance effect in L10-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer.

Influence of chemical stability on the fabrication of MnGa-based devices Magnetoresistance effect in L10-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer

Reference 9

Resolution
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raw_fallback, observed 2026-08-14T12:43:32.830416Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.363913Z digest=sha256:ceba030cade3d94c600dd23182c524583229083bc12549d6778e58a6b099b254

Observation a7717a51-dfce-4bdf-a243-486e4e053d48 · outbound

This paper cites an unresolved cited work.

Influence of chemical stability on the fabrication of MnGa-based devices Unresolved cited work

Reference 10

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unresolved
raw_fallback, observed 2026-08-14T12:43:32.815280Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.406998Z digest=sha256:18eb38b4ab0d15699c6ebcda98e5e65459b335b10388fb6e81dfe7cd8be21eff

Observation 081f0ca4-0826-494b-a213-8ada722b9a04 · outbound

This paper cites an unresolved cited work.

Influence of chemical stability on the fabrication of MnGa-based devices Unresolved cited work

Reference 11

Resolution
unresolved
raw_fallback, observed 2026-08-14T12:43:32.798869Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.427391Z digest=sha256:37a2d96b40d664fccbc3e93fcd39425399eb111f82c9c09772880137fa1ed73f

Observation f96b64c3-ef86-4bfa-9f01-57e8c0173077 · outbound

This paper cites MnGa- based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers.

Influence of chemical stability on the fabrication of MnGa-based devices MnGa- based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

Reference 12

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.730096Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.457415Z digest=sha256:074d6a393d2aa0faa55b97af1ec3f646b4d736022bc4877031d33e4a8c7f5d03

Observation 73fb5ef1-c289-46c4-b5c9-ece52b5dbf16 · outbound

This paper cites L10-MnGa based magnetic tunnel junction for high magnetic field sensor.

Influence of chemical stability on the fabrication of MnGa-based devices L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Reference 13

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.635157Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.481813Z digest=sha256:01ee68d6701424947ef4614ad460282c4f22b03ff1a82fa37c34bae6cdf880f1

Observation 2a856a49-e8ae-4ee1-833f-3adc117bc39e · outbound

This paper cites Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers.

Influence of chemical stability on the fabrication of MnGa-based devices Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers

Reference 14

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.614407Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.486392Z digest=sha256:060c5177c810204adfee73593148a20fdd047ebf17c77c42aa49727a4e943369

Observation 3d2bcbb2-bf46-447f-ba69-17622f401619 · outbound

This paper cites Observation of orbital two -channel Kondo effect in a ferromagnetic L10-MnGa film.

Influence of chemical stability on the fabrication of MnGa-based devices Observation of orbital two -channel Kondo effect in a ferromagnetic L10-MnGa film

Reference 15

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.597417Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.491044Z digest=sha256:3c6043589b04cd9aeb9e7475453b01adfdd8ae778163a4310efddb429d10d82d

Observation e5fb8565-9625-4af9-846a-7dde9a580186 · outbound

This paper cites Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering.

Influence of chemical stability on the fabrication of MnGa-based devices Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering

Reference 16

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raw_fallback, observed 2026-08-14T12:43:32.581092Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.496288Z digest=sha256:5da1e0dff82bba730905d30f75d76d2461c17df488d5e270bbd0328cd14c3f86

Observation 84167fc4-c755-4518-b488-47247bd6dd91 · outbound

This paper cites Magnetic Tetragonal δ Phase in the Mn –Ga Binary.

Influence of chemical stability on the fabrication of MnGa-based devices Magnetic Tetragonal δ Phase in the Mn –Ga Binary

Reference 17

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raw_fallback, observed 2026-08-14T12:43:32.564891Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.501660Z digest=sha256:0e1e327beba0b91f98a7b0d2b83e3c5e59ab3ae4594051db1bffc3de7069610e

Observation 3e708eb9-6dff-4c21-96e7-60961995b268 · outbound

This paper cites Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties.

Influence of chemical stability on the fabrication of MnGa-based devices Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties

Reference 18

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raw_fallback, observed 2026-08-14T12:43:32.548256Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:43:32.506307Z digest=sha256:a7601138335eae731fc4a16220b938d14c270f657db7a555f120b9d54d343169

Pith citing papers

No inbound Pith citation observations are available.