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An Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates

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arxiv cond-mat/0703309 v1 pith:R6TKEPA4 submitted 2007-03-12 cond-mat.supr-con cond-mat.str-el

classification cond-mat.supr-concond-mat.str-el
keywords electroniccupratestunnelingasymmetrycu-o-cudomainsglassintrinsic
verification ladder T0 review T1 audit T2 compute T3 formal
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Removing electrons from the CuO2 plane of cuprates alters the electronic correlations sufficiently to produce high-temperature superconductivity. Associated with these changes are spectral weight transfers from the high energy states of the insulator to low energies. In theory, these should be detectable as an imbalance between the tunneling rate for electron injection and extraction - a tunneling asymmetry. We introduce atomic-resolution tunneling-asymmetry imaging, finding virtually identical phenomena in two lightly hole-doped cuprates: Ca1.88Na0.12CuO2Cl2 and Bi2Sr2Dy0.2Ca0.8Cu2O8+d. Intense spatial variations in tunneling asymmetry occur primarily at the planar oxygen sites; their spatial arrangement forms a Cu-O-Cu bond centered electronic pattern without long range order but with 4a0-wide unidirectional electronic domains dispersed throughout (a0: the Cu-O-Cu distance). The emerging picture is then of a partial hole-localization within an intrinsic electronic glass evolving, at higher hole-densities, into complete delocalization and highest temperature superconductivity.

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