Wafer scale reactive sputtering of highly oriented and ferroelectric Al$_{0.6}$Sc$_{0.4}$N from 300 mm AlSc Targets

This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al$_{1-x}$Sc$_x$N thin films with very high Sc content. Al$_{0.6}$Sc$_{0.4}$N layers were deposited by reactive sputtering from a 300 mm diameter Al$_{0.6}$Sc$_{0.4}$N target on standard 200 mm Si wafers with Pt bottom- and Mo top-electrodes. The deposited films were analyzed in depth with X-Ray diffraction (XRD), Reciprocal Space Mapping (RSM), Scanning electron microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDX) showing well oriented c-axis growth over the full wafer with slight variation in the film thickness and Sc content over the wafer radius. An overall low density of abnormally oriented grains (AOG) was found. Further wafer mapping for piezoelectric and dielectric properties showed a piezoelectric performance increase by 40 % in comparison to Al$_{0.7}$Sc$_{0.3}$N while only moderately increasing the permittivity and loss factor. Switching measurements revealed ferroelectric behavior of the film on all measured positions with an average remanent polarization of 88.36 uC/cm$^2$ and an average coercive field of 244 V/um. This successful demonstration opens new opportunities for MEMS applications with demands for high forces like microspeakers or quasi static micromirrors.