Pith. sign in

REVIEW 3 major objections 5 minor 42 references

Magnetoresistive Memory in the Paramagnetic Phase of Eu$_5$In$_2$As$_6$

T0 review · 3 major / 5 minor · reviewed 2026-08-01 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Eu5In2As6 shows magnetoresistive memory starting at twice its antiferromagnetic transition temperature, in the paramagnetic phase.

desk verdict A reproducible MRM above T_N in a doped semiconductor is a real new observation, but the paramagnetic-phase claim needs field-dependent neutron data before it can be accepted. read the letter →

arxiv 2607.20287 v1 pith:RQB4DVYU submitted 2026-07-22 cond-mat.str-el cond-mat.mtrl-sci

Sudhaman R. Balguri , Mira B. Mahendru , Rourav Basak , Enrique O. González-Delgado , Adam A. Aczel , David E. Graf , Andreas Rydh , Christopher C. Homes
show 4 more authors
Jonathan Gaudet Ying Ran Alex Frano Fazel Tafti
This is my paper · ORCID
classification cond-mat.str-elcond-mat.mtrl-sci
keywords magnetoresistivememoryEu5In2As6paramagneticphasehiddenordermagneticpolaronsresistivityrelaxationcolossalmagnetoresistancemagnetoelasticcoupling
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper sets out to show that the magnetic semiconductor Eu5In2As6 stores magnetic-field history in its electrical resistance while it is still paramagnetic, more than a factor of two above its antiferromagnetic transition at 16 K. Below about 30 K, zero-field-cooled crystals have much higher resistance than field-trained ones, the field upsweep and downsweep traces fail to overlap, and the resistance relaxes on minute timescales. Neither neutron diffraction, magnetization, nor specific heat finds long-range magnetic order, magnetic hysteresis, or a thermodynamic anomaly in that window, so the memory cannot be blamed on conventional magnetic domains. The paper argues that the effect must come from field-trainable scattering objects—either domain walls of a hidden electronic order or short-range magnetic polarons—and that it turns on together with a resistivity minimum and an accelerated lattice contraction.

What carries the argument

The load-bearing experimental object is the ratio of untrained to trained resistivity as a function of temperature: it is unity above 30 K and rises by orders of magnitude below 30 K, acting as the memory's effective order parameter even though no conventional order appears. The protocol of a training field (the field applied while cooling before measurement) versus a measuring field (the field during the resistivity ramp) defines the distinct memory states. A stretched-exponential fit to the fixed-field resistivity relaxation, with timescales of minutes, is interpreted as retarded growth or proliferation of scattering domain walls. The absence of frequency-dependent AC susceptibility and of

What would settle it

Measure the untrained zero-field resistivity with a high-impedance four-probe bridge that can resolve values above the lock-in limit below 1.5 T, and repeat the time-dependence measurements while monitoring the sample thermometer. If the order-of-magnitude ZFC-versus-trained splitting disappears, or the relaxation time matches the cryostat thermal time constant, the intrinsic-memory claim fails. Alternatively, field-trained neutron or resonant X-ray scattering at 30 K could detect the proposed hidden order or rule it out.

Watch

Extended reading notes

Core claim

The central discovery is a magnetoresistive memory (MRM) in Eu5In2As6: below roughly 30 K the resistivity depends on the magnetic-field history, not just the instantaneous field, even though antiferromagnetic order sets in at 16 K and no long-range order exists above it. The zero-field-cooled resistivity exceeds the trained-state resistivity by up to four orders of magnitude at 2 K, the two curves merge above 30 K, the hysteresis loop between field upsweep and downsweep is reversible and reproducible across samples, and the resistivity relaxes on a 1.5–5 minute scale at fixed field. This memory has no counterpart in magnetization, specific heat, or neutron diffraction, and it does not appear

Load-bearing premise

The central claim stands or falls on the assumption that the history-dependent resistivity and its minute-scale relaxation are intrinsic to Eu5In2As6 and not caused by measurement limits, contact settling, or slow thermal equilibration; the most dramatic untrained-state signal below 1.5 T exceeded the lock-in detection limit and was not directly measured.

Editorial extensions

If this is right

  • MRM no longer appears tied to strongly correlated metals with metal-insulator transitions: Eu5In2As6 is a weakly correlated semiconductor with a 45 meV gap and a carrier density of 10^16–10^18 cm⁻³.
  • The memory and the resistivity minimum appear together and are both absent in Eu5In2Sb6, implicating hybridization between Eu f-states and extrinsic carriers as the microscopic trigger.
  • Because magnetization and neutron diffraction show no hysteresis, the resistive memory is decoupled from the bulk magnetic moment; a memory device built on it would be read electrically, with no moving magnetic domains.
  • The same 30 K onset across five crystals with different carrier densities points to an intrinsic electronic transition rather than a sample-specific inhomogeneity.
  • A lattice contraction begins at 30 K, so any successful explanation must couple the electronic order or polarons to the lattice, not only to spins.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial extension: the quickest falsification is to measure the untrained zero-field resistivity below 1.5 T with a high-impedance bridge; the paper admits that this region exceeded its lock-in detection limit, so the most dramatic memory signal is still unmeasured.
  • Editorial extension: because carrier-poor samples (below ~5 × 10¹⁷ cm⁻³) show no MRM, doping or gating could tune or raise the 30 K onset, potentially extending the effect toward higher temperatures.
  • Editorial extension: the supplement's symmetry analysis identifies a time-reversal-odd, fully symmetric order parameter that couples to the field only through the triple product HxHyHz; angle-resolved magnetostriction near 30 K could test whether such a multipolar hidden order is actually present.
  • Editorial extension: the two proposed mechanisms, polaron percolation and hidden-order domain walls, predict different field-history dependence of diffuse neutron scattering, so a field-trained neutron study above 16 K could separate them.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports a magnetoresistive memory (MRM) in the magnetic semiconductor Eu5In2As6. Specifically, below about 30 K — approximately twice the antiferromagnetic transition temperature TN = 16 K — the resistivity depends on the history of an applied magnetic field: ZFC and field-trained ρ(T) curves separate by up to four orders of magnitude, ρ(H) up- and down-sweeps form a reproducible hysteresis loop, and the resistivity relaxes on minute timescales. The authors find no corresponding hysteresis in magnetization, no anomaly in specific heat at 30 K, and no long-range magnetic order above 16 K in zero-field neutron diffraction. They interpret the effect as arising either from magnetic polarons or from a hidden time-reversal-odd order with domain-wall scattering, and suggest the effect may enable memory applications.

Significance. If the central claim is established, this is a significant result: MRM has previously been confined to two strongly correlated metallic systems — perovskite manganites and pyrochlore iridates — and in both cases only in magnetically ordered phases. Demonstrating MRM in a low-carrier semiconductor and in a regime with no detected long-range magnetic order would broaden the phenomenology and motivate searches in related Zintl phases. The paper's strengths are the reproducibility across several crystals, the small angle dependence of the effect, and the explicit controls: current-independence excludes Joule heating, frequency-independent AC susceptibility and time-independent magnetization exclude spin-glass and conventional ferromagnetic hysteresis, and the zero-field neutron data place TN and TN′ well below the MRM onset. These controls make the basic field-history-dependent resistivity effect credible. The main limitations are the absence of field-dependent neutron scattering above TN and the unmeasured low-field untrained state; both are load-bearing for the 'paramagnetic phase' and 'orders of magnitude' claims.

major comments (3)
  1. [Fig. S8 / Methods (Neutron diffraction)] The paramagnetic-phase claim is not established under the same conditions where MRM is measured. Neutron diffraction shows magnetic Bragg peaks only in zero-field temperature scans [Q=(0,0,1/2) and Q=(1,0,0) versus T] and in field sweeps performed at 15 K, i.e. below TN. No search is reported for field-induced magnetic order at T = 18–30 K under the 2–9 T fields where the MRM is observed. The statement 'we did not find any other magnetic wave vectors, so there are no FM or AFM orders at T>16 K' is therefore only a zero-field statement. M(H) at 20 K (Fig. S8f) rules out net ferromagnetic hysteresis but not an antiferromagnetic or SDW order. Because the abstract and title rest on MRM occurring 'well within the paramagnetic phase,' field-dependent neutron scattering (or an equivalent bulk probe) at a representative T>16 K in the MRM field range is needed, or the claims must be explicitly re
  2. [Fig. 1b caption / Results, pp. 4–5] The quantitative 'orders of magnitude' memory at zero or low field is not directly measured. The Fig. 1b caption states that the untrained ZFC resistivity 'exceeded the lock-in detection limit and was not measurable below H = 1.5 T,' yet the Results describe 'ρ(H=0)' as three orders of magnitude larger in the ZFC curve than in subsequent field sweeps, and Fig. 1a/b draw the green ZFC curves down to H = 0. The MRM contrast at 2 T in Fig. 2a is measured and does support a real memory effect, but the zero-field and low-field claims should be labeled as extrapolated or inferred rather than presented as data, and the figures should mark the unmeasured region clearly.
  3. [Supplementary Sec. 10 (Theoretical Discussion)] The proposed hidden-order model is internally inconsistent with the reported angle independence. The section argues that a time-reversal-odd Ag order parameter coupled as F ∼ b χ HxHyHz can explain the absence of magnetization hysteresis, but then states that 'this coupling indicates that a strong angle-dependence in the hysteresis of magnetoresistance, which is not observed in experiments.' Since the near angle-independence of the MRM is used earlier as evidence that the effect is intrinsic, this contradiction needs to be resolved: either identify a different symmetry-allowed coupling that is angle-independent, or explicitly withdraw the hidden-order explanation and rely on the polaronic/short-range correlated scenario.
minor comments (5)
  1. [Fig. 1a] The green ZFC resistivity curve in the right column appears continuous to H = 0, despite the same figure/caption noting the untrained state is unmeasurable below 1.5 T. Use dashed curves or open symbols to distinguish extrapolated regions.
  2. [Fig. 3 / Time Dependence] The stretched-exponential form is written as ρ = ρ0[1 − exp(−τ/t)^β]; the standard form is exp[−(t/τ)^β]. Please correct the equation and provide the fitted τ, β, and residuals for the data in Fig. 3a, since only τ = 1.5 min is quoted.
  3. [Methods / Data availability] The data availability statement says data 'will be made available online after publication'; a persistent repository link or DOI should be included for the review process, especially given the heavy reliance on supplementary figures.
  4. [Results, p. 6] The sentence 'Non-overlapping upsweep and downsweep curves indicate a broken TRS' is stronger than the evidence: hysteresis plus slow relaxation can produce non-overlapping curves in a non-equilibrium state without equilibrium time-reversal-symmetry breaking. Consider rewording to 'history-dependent' or 'effectively broken time-reversal symmetry in the memory state.'
  5. [Affiliations / General] Minor typographical issues: 'New Y ork' in the NIST affiliation, 'leading the observed hysteresis' should be 'leading to', and the reference formatting is inconsistent (e.g., ref. 38 uses lowercase initials).

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: MRM is a direct experimental finding; ancillary self-citations and speculative hidden-order discussion are not load-bearing.

full rationale

No circular step is present in the derivation chain. The central claim—history-dependent resistivity (MRM) below ~30 K with onset at ~2TN—is presented as direct measurements (Fig. 1b loops; Fig. 2 ratio rho_untrained/rho_trained), not as the output of a model fitted to those same data. The stretched-exponential relaxation times (tau = 1.5 and 5.2 min) are empirical characterizations and are never used to predict or define the memory effect, so there is no fitted-input-called-prediction step. The authors' prior PRB work (ref 23) supplies background for CMR mechanisms and polaron language, but the present paper independently reports the MRM onset, sample dependence (Fig. S2, Table S1), lattice contraction (Fig. S7), and absence of magnetization hysteresis (Fig. S8f); TN is directly measured here by neutron diffraction (Fig. S8c), so the self-citation is not load-bearing. The hidden-order versus polaron discussion is explicitly speculative ('either...or...', 'we cannot distinguish these two mechanisms with certainty'), and the SI symmetry analysis even notes that its proposed coupling predicts an angle dependence 'not observed in experiments'—a tension in an auxiliary speculation, not a circular reduction. The main weakness is evidentiary, not circular: the Fig. 1b caption admits the untrained state resistivity was 'not measurable below H = 1.5 T,' and the neutron data establishing paramagnetism above 16 K (Fig. S8c) are zero-field while MRM is measured at 2–9 T. If field-induced order existed at 18–30 K, the 'paramagnetic phase' framing could fail, but that is a missing control, not a derivation that reduces to its own input.

Assumptions & free parameters 3 free parameters · 5 assumptions · 2 invented entities

The central claim is experimental and does not rely on fitted parameters to generate the memory effect. The main fitted quantity is the empirical relaxation time. The paper introduces an unobserved hidden order and hidden-order domain walls as candidate mechanisms, but does not provide independent falsifiable evidence for them; the proposed symmetry model even predicts behavior the authors state is not observed.

free parameters (3)
  • Stretched-exponential relaxation time tau = 1.5 min (initial field sweep), 5.2 min (subsequent sweeps)
    Fitted to normalized resistivity versus time at 4 T and 18 K in Fig. 3; descriptive of the relaxation, not used to derive the central memory claim.
  • Stretched-exponential exponent beta = not reported
    A free parameter of the stretched-exponential fit whose fitted value is not stated in the text or figure.
  • Transport activation gap Eg = 45(6) meV (transport), ~60 meV (optical)
    Extracted from Arrhenius fit to zero-field resistivity in Fig. S1a; characterizes the semiconductor but is not load-bearing for the MRM claim.
assumptions (5)
  • standard math D2h point-group assignment and B1g/B2g/B3g transformation properties of the magnetic field H
    Used in Supplementary Information Section 10 for the symmetry analysis of a possible hidden order parameter; standard crystallographic group theory.
  • domain assumption Single-band Hall model n = 1/(e R_H)
    Used to estimate carrier densities between 10^16 and 10^18 cm^-3; assumes one carrier type and ignores possible multi-band or hopping corrections.
  • domain assumption Arrhenius single-exponential activated transport describes the gap
    Used to extract the 45-meV transport gap from ln(rho) versus 1/T; polaronic or variable-range-hopping conduction could make the simple activated form an approximation.
  • domain assumption Absence of magnetic Bragg peaks in the measured (H,0,L) scattering plane rules out long-range order above 16 K
    Used to support the paramagnetic-phase claim; only accessible Q-positions and field directions in the VERITAS scattering plane are probed.
  • domain assumption The resistivity minimum T_min signals s-f or p-f hybridization
    The hidden-order scenario rests on interpreting T_min as a hybridization-driven feature; no direct spectroscopic evidence for hybridization is provided in this work.
invented entities (2)
  • Hidden order (time-reversal-odd scalar Ag order parameter)
    purpose: Explain MRM onset at 30 K, the resistivity minimum, and the lattice contraction without anomalies in specific heat or magnetization.
    No direct diffraction, thermodynamic, or local-probe observation is provided. The supplementary symmetry proposal F ~ b chi H_x H_y H_z is admitted to predict a strong angle dependence that is not observed.
  • Domain walls of the hidden order
    purpose: Provide scattering centers whose field training and relaxation produce hysteresis and time-dependent resistivity.
    Inferred only from transport hysteresis and relaxation; there is no imaging or structural evidence for such walls.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Magnetoresistive Memory in the Paramagnetic Phase of Eu$_5$In$_2$As$_6$." pith.science (2026). https://pith.science/paper/RQB4DVYU

@misc{pith2026260720287,
  author       = {Pith},
  title        = {Pith review of: Magnetoresistive Memory in the Paramagnetic Phase of Eu$_5$In$_2$As$_6$},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/RQB4DVYU}},
  note         = {Machine review of arXiv:2607.20287}
}
abstract

Magnetoresistive materials that respond sensitively to applied fields are central to modern data storage technologies. Here we unveil a novel Magnetoresistive Memory (MRM) in Eu$_5$In$_2$As$_6$, where the electrical resistivity depends not only on the magnitude but also on the history of the applied magnetic field. Such an effect has been reported in only two classes of strongly correlated electron systems: perovskite manganites and pyrochlore iridates. In both cases, the effect has been observed in the magnetically ordered phase. It has been attributed to metastable magnetic states in manganites and conducting domain walls in iridates. Remarkably, the MRM in Eu$_5$In$_2$As$_6$ onsets at twice the antiferromagnetic transition temperature, well within the paramagnetic phase. The temperature, field, and time dependence of resistivity suggest that either a hidden order or a fluctuating phase with short-range correlations underlies this effect. Our results offer MRM as a new platform for quantum sensing and memory technologies, and encourage searching for MRM in related materials.

Figures

Figures reproduced from arXiv: 2607.20287 by the authors.

Figure 1
Figure 1. Field dependence of MRM. (a) Comparing MRM between (left) the manganite R1.2Sr1.8Mn2O7 with R = La0.4Pr0.6 3 , (middle) the iridate Nd2 Ir2O7 9 , and (right) Eu5 In2As6 . The top and bottom panels show the resistivity and magnetization data, respectively. The green, blue, and red curves represent ZFC, downsweep and upsweep data. Insets illustrate field training from a metastable to a stable state in the manganite, a… view at source ↗
Figure 2
Figure 2. Temperature dependence of MRM. (a) Three resistivity curves measured from 2 to 100 K under the same measuring field of 2 T, after the sample was cooled under a training field of 0 T (green), 3 T (blue), and 9 T (red). The inset shows the training procedure (black arrows) before measuring (colored arrows); the circles mark the starting point. (b) MRM appears below 30 K, where the ratio of untrained to trained resisti… view at source ↗
Figure 3
Figure 3. Time dependence of MRM. Normalized resistivity at T = 18 K as a function of time at a few fixed fields, measured during (a) increasing field after the initial ZFC, (b) increasing field when H < 0, (c) increasing field when H > 0, (d) decreasing field when H < 0, (e) decreasing field when H > 0. Insets show the field sweep directions. (f) Time dependence of magnetization at 18 K showing no variation with time. The gr… view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: Application of MRM. (a) A training sequence, where black lines show the training process and the colored lines show the measurement process. (b) The red data were obtained from an untrained Eu5 In2As6 crystal measured at 1 T, while the blue data were obtained from the …

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

42 extracted references · 16 canonical work pages

  1. [1]

    & Moreo, A

    Dagotto, E., Hotta, T. & Moreo, A. Colossal magnetoresistant materials: the key role of phase separation.Physics Reports344, 1–153 (2001). URLhttps://www.sciencedirect. com/science/article/pii/S0370157300001216

    2001

  2. [2]

    Uehara, M., Mori, S., Chen, C. H. & Cheong, S.-W. Percolative phase separation underlies colossal magnetoresistance in mixed-valent manganites.Nature399, 560–563 (1999). URL https://www.nature.com/articles/21142

    1999

  3. [3]

    URLhttps://link

    Gordon, I.et al.Temperature dependent memory effects in the bilayer manganite (La0.4Pr0.6)1.2Sr1.8Mn2O7.Physical Review B64, 092408 (2001). URLhttps://link. aps.org/doi/10.1103/PhysRevB.64.092408

    work page doi:10.1103/physrevb.64.092408 2001

  4. [4]

    & Tokura, Y

    Kuwahara, H., Tomioka, Y ., Asamitsu, A., Moritomo, Y . & Tokura, Y . A First-Order Phase Transition Induced by a Magnetic Field.Science270, 961–963 (1995). URLhttps:// www.science.org/doi/10.1126/science.270.5238.961

    work page doi:10.1126/science.270.5238.961 1995

  5. [5]

    & Tokura, Y

    Tomioka, Y ., Asamitsu, A., Moritomo, Y ., Kuwahara, H. & Tokura, Y . Collapse of a Charge- Ordered State under a Magnetic Field in Pr1/2Sr1/2MnO3.Physical Review Letters74, 5108– 5111 (1995). URLhttps://link.aps.org/doi/10.1103/PhysRevLett.74. 5108

    doi:10.1103/physrevlett.74 1995

  6. [6]

    & Tokura, Y

    Yoshizawa, H., Kawano, H., Tomioka, Y . & Tokura, Y . Neutron-diffraction study of the magnetic-field-induced metal-insulator transition in Pr 0.7Ca0.3MnO3.Physical Re- view B52, R13145–R13148 (1995). URLhttps://link.aps.org/doi/10.1103/ PhysRevB.52.R13145

    1995

  7. [7]

    Science329, 190–193 (2010)

    Lai, K.et al.Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film. Science329, 190–193 (2010). URLhttps://www.science.org/doi/10.1126/ science.1189925

    2010

  8. [8]

    & Polla, G

    Levy, P., Parisi, F., Granja, L., Indelicato, E. & Polla, G. Novel Dynamical Effects and Per- sistent Memory in Phase Separated Manganites.Physical Review Letters89, 137001 (2002). URLhttps://link.aps.org/doi/10.1103/PhysRevLett.89.137001. 15

    work page doi:10.1103/physrevlett.89.137001 2002

Show all 42 references
  1. [9]

    URLhttps: //link.aps.org/doi/10.1103/PhysRevB.89.075127

    Ueda, K.et al.Anomalous domain-wall conductance in pyrochlore-type Nd 2Ir2O7 on the verge of the metal-insulator transition.Physical Review B89, 075127 (2014). URLhttps: //link.aps.org/doi/10.1103/PhysRevB.89.075127

    2014 doi

  2. [10]

    URLhttps://www.nature.com/ articles/nphys3567

    Tian, Z.et al.Field-induced quantum metal–insulator transition in the pyrochlore iridate Nd2Ir2O7.Nature Physics12, 134–138 (2016). URLhttps://www.nature.com/ articles/nphys3567

    2016

  3. [11]

    & Takagi, S

    Matsuhira, K., Wakeshima, M., Hinatsu, Y . & Takagi, S. Metal–Insulator Transitions in Py- rochlore Oxides Ln2Ir2O7.Journal of the Physical Society of Japan80, 094701 (2011). URL https://journals.jps.jp/doi/10.1143/JPSJ.80.094701

    2011 doi

  4. [12]

    Arima, T.-h. Time-Reversal Symmetry Breaking and Consequent Physical Responses Induced by All-In-All-Out Type Magnetic Order on the Pyrochlore Lattice.Journal of the Physical So- ciety of Japan82, 013705 (2013). URLhttp://journals.jps.jp/doi/10.7566/ JPSJ.82.013705

    2013

  5. [14]

    & Behnia, K

    Collaudin, A., Fauqué, B., Fuseya, Y ., Kang, W. & Behnia, K. Angle Dependence of the Orbital Magnetoresistance in Bismuth.Physical Review X5, 021022 (2015). URLhttps: //link.aps.org/doi/10.1103/PhysRevX.5.021022

    2015 doi

  6. [15]

    URLhttps://www.nature.com/articles/ s41586-021-03697-8

    Grissonnanche, G.et al.Linear-in temperature resistivity from an isotropic Planckian scatter- ing rate.Nature595, 667–672 (2021). URLhttps://www.nature.com/articles/ s41586-021-03697-8

    2021

  7. [16]

    URLhttps://link.aps.org/ doi/10.1103/PhysRevB.96.235128

    Yang, H.-Y .et al.Extreme magnetoresistance in the topologically trivial lanthanum monop- nictide LaAs.Physical Review B96, 235128 (2017). URLhttps://link.aps.org/ doi/10.1103/PhysRevB.96.235128

    2017 doi

  8. [17]

    N.et al.Large, non-saturating magnetoresistance in WTe 2.Nature514, 205–208 (2014)

    Ali, M. N.et al.Large, non-saturating magnetoresistance in WTe 2.Nature514, 205–208 (2014). URLhttps://www.nature.com/articles/nature13763. 16

    2014

  9. [18]

    URLhttps://www.science.org/doi/10.1126/science

    Suzuki, T.et al.Singular angular magnetoresistance in a magnetic nodal semimetal.Science 365, 377–381 (2019). URLhttps://www.science.org/doi/10.1126/science. aat0348

    2019 doi

  10. [19]

    & Ramírez Muñoz, D

    Reig, C., Cubells-Beltrán, M.-D. & Ramírez Muñoz, D. Magnetic Field Sensors Based on Gi- ant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing.Sen- sors9, 7919–7942 (2009). URLhttps://www.mdpi.com/1424-8220/9/10/7919

    2009

  11. [20]

    URL https://www.nature.com/articles/s41563-025-02175-0

    Kao, I.-H.et al.Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet.Nature Materials24, 1049–1057 (2025). URL https://www.nature.com/articles/s41563-025-02175-0

    2025

  12. [21]

    URLhttps://www.nature.com/articles/nmat3861

    Marti, X.et al.Room-temperature antiferromagnetic memory resistor.Nature Materials13, 367–374 (2014). URLhttps://www.nature.com/articles/nmat3861

    2014

  13. [22]

    URLhttps://www.nature.com/articles/ s41563-024-02088-4

    Liu, Y .et al.Cryogenic in-memory computing using magnetic topological insulators.Na- ture Materials24, 559–564 (2025). URLhttps://www.nature.com/articles/ s41563-024-02088-4

    2025

  14. [23]

    URLhttps://link.aps.org/ doi/10.1103/PhysRevB.111.115114

    Balguri, S.et al.Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6.Physical Review B111, 115114 (2025). URLhttps://link.aps.org/ doi/10.1103/PhysRevB.111.115114

    2025 doi

  15. [24]

    Chandra, P., Coleman, P., Mydosh, J. A. & Tripathi, V . Hidden orbital order in the heavy fermion metal URu 2Si2.Nature417, 831–834 (2002). URLhttps://www.nature. com/articles/nature00795

    2002

  16. [25]

    & Kotliar, G

    Haule, K. & Kotliar, G. Arrested Kondo effect and hidden order in URu 2Si2.Nature Physics 5, 796–799 (2009). URLhttps://www.nature.com/articles/nphys1392

    2009

  17. [26]

    S.et al.Unveiling hidden multipolar orders with magnetostriction.Nature Communications10, 4092 (2019)

    Patri, A. S.et al.Unveiling hidden multipolar orders with magnetostriction.Nature Communications10, 4092 (2019). URLhttps://www.nature.com/articles/ s41467-019-11913-3

    2019

  18. [27]

    Physical Review Letters106, 177001 (2011)

    Onimaru, T.et al.Antiferroquadrupolar Ordering in a Pr-Based Superconductor PrIr 2Zn20. Physical Review Letters106, 177001 (2011). URLhttps://link.aps.org/doi/10. 1103/PhysRevLett.106.177001. 17

    2011

  19. [28]

    Physical Review Letters97, 257601 (2006)

    Tokunaga, Y .et al.NMR Evidence for Higher-Order Multipole Order Parameters in NpO 2. Physical Review Letters97, 257601 (2006). URLhttps://link.aps.org/doi/10. 1103/PhysRevLett.97.257601

    2006

  20. [29]

    URL https://www.pnas.org/doi/10.1073/pnas.1005892107

    Aynajian, P.et al.Visualizing the formation of the Kondo lattice and the hidden order in URu2Si2.Proceedings of the National Academy of Sciences107, 10383–10388 (2010). URL https://www.pnas.org/doi/10.1073/pnas.1005892107

    2010 doi

  21. [30]

    Varnava, N., Berry, T., McQueen, T. M. & Vanderbilt, D. Engineering magnetic topologi- cal insulators in Eu 5M2X6 Zintl compounds.Physical Review B105, 235128 (2022). URL https://link.aps.org/doi/10.1103/PhysRevB.105.235128

    2022 doi

  22. [31]

    M.et al.Magnetization and Hall effect studies on the pyrochlore iridate Nd 2Ir2O7

    Disseler, S. M.et al.Magnetization and Hall effect studies on the pyrochlore iridate Nd 2Ir2O7. Physical Review B87, 060403 (2013). URLhttps://link.aps.org/doi/10.1103/ PhysRevB.87.060403

    2013

  23. [32]

    npj Quantum Materials5, 52 (2020)

    Rosa, P.et al.Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator. npj Quantum Materials5, 52 (2020). URLhttps://www.nature.com/articles/ s41535-020-00256-8

    2020

  24. [33]

    Crivillero, M. V . A.et al.Magnetic and electronic properties unveil polaron formation in Eu5In2Sb6.Scientific Reports13, 1597 (2023). URLhttps://doi.org/10.1038/ s41598-023-28711-z

    2023

  25. [34]

    URLhttps://www.nature.com/ articles/s41535-026-00859-7

    Kopp, M.et al.Robust magnetic polaron percolation in the antiferromagnetic CMR system EuCd2P2.npj Quantum Materials11, 22 (2026). URLhttps://www.nature.com/ articles/s41535-026-00859-7

    2026

  26. [35]

    Random-Field Instability of the Ordered State of Continuous Symmetry.Physical Review Letters35, 1399–1401 (1975)

    Imry, Y . Random-Field Instability of the Ordered State of Continuous Symmetry.Physical Review Letters35, 1399–1401 (1975)

    1975

  27. [36]

    URLhttps://link.aps.org/doi/10.1103/PhysRevB.72.064412

    Matsukawa, M.et al.Resistive relaxation in the field-induced insulator-metal transition of a (la 0.4pr0.6)1.2sr1.8mn2o7 bilayer manganite single crystal.Physical Review B72, 064412 (2005). URLhttps://link.aps.org/doi/10.1103/PhysRevB.72.064412

    2005 doi

  28. [37]

    Nam, D. N. H., Mathieu, R., Nordblad, P., Khiem, N. V . & Phuc, N. X. Ferromagnetism and frustration in nd 0.7sr0.3mno3.Physical Review B62, 1027–1032 (2000). URLhttps: //link.aps.org/doi/10.1103/PhysRevB.62.1027. 18

    2000 doi

  29. [38]

    Proceedings of the National Academy of Sciences121, e2409846121 (2024)

    Li, Y .-F.et al.Colossal magnetoresistance from spin-polarized polarons in an Ising system. Proceedings of the National Academy of Sciences121, e2409846121 (2024). URLhttps: //pnas.org/doi/10.1073/pnas.2409846121

    2024 doi

  30. [39]

    C.et al.Noncollinear 2 k antiferromagnetism in the Zintl semiconductor Eu 5 In 2 Sb 6.Physical Review B109, 014432 (2024)

    Morano, V . C.et al.Noncollinear 2 k antiferromagnetism in the Zintl semiconductor Eu 5 In 2 Sb 6.Physical Review B109, 014432 (2024). URLhttps://link.aps.org/doi/ 10.1103/PhysRevB.109.014432

    2024 doi

  31. [40]

    S.et al.AC elastocaloric effect as a probe for thermodynamic signatures of continuous phase transitions.Review of Scientific Instruments90, 083902 (2019)

    Ikeda, M. S.et al.AC elastocaloric effect as a probe for thermodynamic signatures of continuous phase transitions.Review of Scientific Instruments90, 083902 (2019). URL https://doi.org/10.1063/1.5099924

    2019 doi

  32. [41]

    Tagliati, S., Krasnov, V . M. & Rydh, A. Differential membrane-based nanocalorimeter for high-resolution measurements of low-temperature specific heat.Review of Scientific Instru- ments83, 055107 (2012). URLhttps://doi.org/10.1063/1.4717676

    2012 doi

  33. [42]

    C., Reedyk, M., Crandles, D

    Homes, C. C., Reedyk, M., Crandles, D. A. & Timusk, T. Technique for measuring the reflectance of irregular, submillimeter-sized samples.Appl. Opt.32, 2976–2983 (1993). 19 AcknowledgmentsWe thank Itamar Kimchi and Rafael Fernandes for insightful discussions. The work at Boston...

    1993

  34. [43]

    Errors are propagated from the uncertainty in the angular measure of 2θ

    as a function of temperature in Eu 5In2As6 from x-ray diffraction data shown between 5 K and 50 K. Errors are propagated from the uncertainty in the angular measure of 2θ. (c) Percentage change with respect to the corresponding 100 K value depicts the anisotropy of the lattice...

Pith tools

Reviewed August 1, 2026 · model on record in the stance chip above.