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Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

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arxiv cond-mat/0404399 v2 pith:RXQ2YDPR submitted 2004-04-16 cond-mat.mtrl-sci

L. J. Klein , K. A. Slinker , J. L. Truitt , S. Goswami , K. L. M. Lewis , S. N. Coppersmith , D. W. van der Weide , Mark Friesen
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R. H. Blick D. E. Savage M. G. Lagally Charles Tahan Robert Joynt M. A. Eriksson J. O. Chu J. A. Ott P. M. Mooney
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords electronblockadecoulombquantumsiliconsilicon-germaniumsinglebeam
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We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

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