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Doped Semiconductor Devices for sub-MeV Dark Matter Detection
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abstract
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design.
Forward citations
Cited by 3 Pith papers
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Probing Supernova Neutrino Boosted Dark Matter with Collective Excitation
Galactic supernova neutrino boosted dark matter can produce plasmon excitations in silicon detectors, improving sub-MeV dark matter sensitivity by 3 to 4 orders of magnitude over Super-K.
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First-principles upper bounds on dark matter-electron scattering rates from condensed matter sum rules
Dark matter-electron scattering rates in isotropic materials are bounded from above by a universal expression depending only on plasma frequency, mass density, and static dielectric function.
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Unconventional Materials for Light Dark Matter Detection
TiSe2, Sr2RuO4, and hole-doped diamond are projected to improve sub-MeV dark matter detection reaches by one to three orders of magnitude over existing proposals, with directional sensitivity from their anisotropic responses.
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