Paper Citation Record · LEDGER

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

As of 12 August 2026, this Paper Citation Record lists 40 of 40 outbound references and 0 inbound Pith citation observations for arXiv:2411.17198.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2411.17198 v1

Coverage vector

measured 40 of 40 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-12T12:28:03.629933Z

measured 40 of 40 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-12T06:34:41.77262+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

40 of 40 outbound references displayed

verified exact9
verified fuzzy7
unresolved7
parse uncertain0
malformed identifier1
metadata mismatch16

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 22a7f360-0727-4af9-97cf-5c294939d156 · outbound

This paper cites Dependable Multicore Architectures at Nanoscale: The View From Europe.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Dependable Multicore Architectures at Nanoscale: The View From Europe

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.639728Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 3adf1088-f9cf-4018-8930-28b00a018d39 · outbound

This paper cites Basic mechanisms and modeling of single -event upset in digital microelectronics.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Basic mechanisms and modeling of single -event upset in digital microelectronics

Reference 2

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.483178Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 3b7eb85e-009c-4e94-89df-49fcbec4bf6d · outbound

This paper cites Factors that impact the critical charge of memory elements,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Factors that impact the critical charge of memory elements,

Reference 3

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.745791Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 478f455f-2e2e-4321-bca6-4c8936922524 · outbound

This paper cites Analysis of radiation -hardening techniques for 6 T SRAMs with structured layouts.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Analysis of radiation -hardening techniques for 6 T SRAMs with structured layouts

Reference 4

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.415730Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation ed920419-e7cb-471d-9d3d-5c8f57875b48 · outbound

This paper cites Impact of Technology Scaling on SRAM Soft Error Rates,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Impact of Technology Scaling on SRAM Soft Error Rates,

Reference 5

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.503779Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 6986ee11-3b50-47c4-a4c6-5d0714dc5234 · outbound

This paper cites An 8T -SRAM for Variability Tolerance and Low -Voltage Operation in High -Performance 16 Caches,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment An 8T -SRAM for Variability Tolerance and Low -Voltage Operation in High -Performance 16 Caches,

Reference 6

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.236261Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation db80dd9f-5816-4908-82fd-1ab430454e43 · outbound

This paper cites SRAM Alpha -SER Estimation From Word -Line Voltage Margin Measurements: Design Architecture and Exper imental Results.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment SRAM Alpha -SER Estimation From Word -Line Voltage Margin Measurements: Design Architecture and Exper imental Results

Reference 7

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.154921Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 1c3ac8c6-9588-4896-bc4f-97179588b96a · outbound

This paper cites A Soft Error Tolerant 10T SRAM Bit -Cell With Differential Read Capability.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment A Soft Error Tolerant 10T SRAM Bit -Cell With Differential Read Capability

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.629195Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 29453145-a76a-4d96-88bc-11c95bf7ae10 · outbound

This paper cites Variability aware low leakage reliable SRAM cell design technique.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Variability aware low leakage reliable SRAM cell design technique

Reference 9

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.735044Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 0ab21281-0ec3-497e-af11-60d05fcca83e · outbound

This paper cites Upset hardened memory design for submicron CMOS technology,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Upset hardened memory design for submicron CMOS technology,

Reference 10

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.724207Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation ec900bdf-0599-4455-a736-64930d68e7d6 · outbound

This paper cites Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies

Reference 11

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.713492Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5180aed4-723e-4978-bd0f-95e809521b25 · outbound

This paper cites Autran, D.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Autran, D

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.618716Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 7c691c17-5c77-4a3f-8abb-a938ee87c5b4 · outbound

This paper cites Analytical Model for Estimating Terrestrial Cosmic Ray Fluxes Nearly Anytime and Anywhere in the World: Extension of PARMA/EXPACS.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Analytical Model for Estimating Terrestrial Cosmic Ray Fluxes Nearly Anytime and Anywhere in the World: Extension of PARMA/EXPACS

Reference 14

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.702284Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 936f1512-27f7-4919-bf5e-a292856e028c · outbound

This paper cites Electron -Induced Single- Event Upsets in 45 -nm and 28 -nm Bulk CMOS SRAM -Based FPGAs Operating at Nominal Voltage,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Electron -Induced Single- Event Upsets in 45 -nm and 28 -nm Bulk CMOS SRAM -Based FPGAs Operating at Nominal Voltage,

Reference 15

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.933182Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 91538460-bd4d-4aaf-9e71-b822f43afe07 · outbound

This paper cites Predicting the vulnerability of memories to muon -induced SEUs with low - energy proton tests informed by Monte Carlo simulations,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Predicting the vulnerability of memories to muon -induced SEUs with low - energy proton tests informed by Monte Carlo simulations,

Reference 16

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.863595Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 6848a059-8577-4443-a04c-f6aefb51c5f2 · outbound

This paper cites Study of atmospheric muon interactions in Si nanoscale devices.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Study of atmospheric muon interactions in Si nanoscale devices

Reference 17

Resolution: malformed identifier; no resolver link, observed 2026-08-12T12:28:03.550800Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 6cdfeaa1-0140-4649-a8f8-9a822d23a4d8 · outbound

This paper cites Monte Carlo Evaluation of Single Event Effects in a Deep - Submicron Bulk Technology: Comparison Between Atmospheric a nd Accelerator Environment,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Monte Carlo Evaluation of Single Event Effects in a Deep - Submicron Bulk Technology: Comparison Between Atmospheric a nd Accelerator Environment,

Reference 18

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.796088Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 8e57e191-ef56-413e-a965-cc85a47f756d · outbound

This paper cites SEE Measurements and Simulations Using Mono -Energetic GeV -Energy Hadron Beams,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment SEE Measurements and Simulations Using Mono -Energetic GeV -Energy Hadron Beams,

Reference 19

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.557823Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 944656da-1f2c-4734-b4a3-ea127c02b08f · outbound

This paper cites Impact of Thermal and Intermediate Energy Neutrons on SRAM SEE Rates in the LHC Accelerator.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Impact of Thermal and Intermediate Energy Neutrons on SRAM SEE Rates in the LHC Accelerator

Reference 20

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.651387Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 3d469698-c21c-4569-a437-d6f36872dff8 · outbound

This paper cites Single Event Effe ct cross section calibration and application to quasi - monoenergetic and spallation facilities.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Single Event Effe ct cross section calibration and application to quasi - monoenergetic and spallation facilities

Reference 21

Resolution: verified exact; raw_fallback, observed 2026-08-12T12:28:04.564176Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation f0b1560f-7cd9-4938-8bba-edb5ef517be3 · outbound

This paper cites Method for measuring mixed field radiation levels relevant for SEEs at the LHC,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Method for measuring mixed field radiation levels relevant for SEEs at the LHC,

Reference 22

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.568556Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 2570da0e-c4f1-4711-83ca-a29d16dabef0 · outbound

This paper cites Neutron-induced 10B fission as a major source of soft errors in high density SRAMs.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Neutron-induced 10B fission as a major source of soft errors in high density SRAMs

Reference 23

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.684476Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 0fa50c54-ca6e-4c74-9dbd-b1bc87b7542f · outbound

This paper cites Contribution of Ther mal Neutrons to Soft Error Rate.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Contribution of Ther mal Neutrons to Soft Error Rate

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.608531Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 807c27f1-f2e5-477a-ac41-d8f0a766205c · outbound

This paper cites On -line write margin estimator to monitor performance degradation in SRAM cores.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment On -line write margin estimator to monitor performance degradation in SRAM cores

Reference 25

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.435361Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation c813fdf0-9a2a-477e-b166-426e55adfb96 · outbound

This paper cites A 65-nm Reliable 6T CMOS SRAM Cel l with Minimum Size Transistors.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment A 65-nm Reliable 6T CMOS SRAM Cel l with Minimum Size Transistors

Reference 26

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.582557Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation e89823f8-ec8d-4b8e-886e-5fda1b343301 · outbound

This paper cites Impacts of test factors on heavy ion single event multiple -cell upsets in nanometer -scale SRAM.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Impacts of test factors on heavy ion single event multiple -cell upsets in nanometer -scale SRAM

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.598081Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 178edf29-5d64-4677-8156-188422323cd0 · outbound

This paper cites CHARM: A Mixed Field Facility at CERN for Radiation Tests in Ground, Atmospheric, Space and Accelerator Representative Environments.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment CHARM: A Mixed Field Facility at CERN for Radiation Tests in Ground, Atmospheric, Space and Accelerator Representative Environments

Reference 28

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.589750Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 0f804d5b-3ef9-4443-bd4c-afddaffcf99f · outbound

This paper cites FLUKA Simulations for SE E Studies of Critical LHC Underground Areas,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment FLUKA Simulations for SE E Studies of Critical LHC Underground Areas,

Reference 29

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.221642Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 9fb5c1f5-b969-42fd-bdd5-bb1e173d2838 · outbound

This paper cites Failure map functions and accelerated mean time to failure tests: New approaches from improving. the reliability stimation in systems exposed to single event upsets,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Failure map functions and accelerated mean time to failure tests: New approaches from improving. the reliability stimation in systems exposed to single event upsets,

Reference 30

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:04.144145Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation eccca570-011b-44d5-8ab7-d02288490224 · outbound

This paper cites Bevington and D.K.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Bevington and D.K

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.586614Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation f9f9c94f-a092-412c-a73f-971bbd5e4bba · outbound

This paper cites Quantifying the Effect of Guard Rings and Guard Drains in Mitigating Charge Collection and Charge Spread.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Quantifying the Effect of Guard Rings and Guard Drains in Mitigating Charge Collection and Charge Spread

Reference 32

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.604425Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation cacea7a3-776b-4f5a-8f5b-afd82d89dab2 · outbound

This paper cites Qualification and Characterization of SRAM Memories 18 Used as Radiation Sensors in the LHC,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Qualification and Characterization of SRAM Memories 18 Used as Radiation Sensors in the LHC,

Reference 33

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.005858Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation c7b5d953-1985-4a7c-9799-b3eb4f5da654 · outbound

This paper cites Soft error rate comparison of 6T and 8T SRAM ICs using mono -energetic proton and neutron irradiation sources.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Soft error rate comparison of 6T and 8T SRAM ICs using mono -energetic proton and neutron irradiation sources

Reference 34

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.673103Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation ee40b685-88e5-44b6-97a1-d644c4a50de0 · outbound

This paper cites SRAM single event upset calculation and test using protons in the secondary beam in the BEPC.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T12:28:05.576152Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation bb621f61-77de-4e1a-9ae5-58479a747b75 · outbound

This paper cites A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

Reference 36

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:03.988154Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5d2da97e-7ea6-4e40-92f4-5f8031ea4f88 · outbound

This paper cites Low Energy Proton Single - Event-Upset Test Results on 65 nm SOI SRAM.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Low Energy Proton Single - Event-Upset Test Results on 65 nm SOI SRAM

Reference 37

Resolution: unresolved; no resolver link, observed 2026-08-12T12:28:03.622573Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation e4332a7d-40f2-46b6-9caa-261fdf249ba1 · outbound

This paper cites Heavy ion and proton -induced single event multiple upset,.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Heavy ion and proton -induced single event multiple upset,

Reference 38

Resolution: verified exact; doi, observed 2026-08-12T12:28:03.661587Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation dd20c3ab-0a56-412d-b44e-8bd1f75e6d9c · outbound

This paper cites Investigation of neutron and proton SEU cross-sections on SRAMs between a few MeV and 50 MeV.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Investigation of neutron and proton SEU cross-sections on SRAMs between a few MeV and 50 MeV

Reference 39

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:03.815361Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 8c32bd39-4a77-4730-a7f5-88e8c837c047 · outbound

This paper cites an unresolved cited work.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Unresolved cited work

Reference 2009

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.072096Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation babdc3b2-7a4a-4450-a7ba-e21d8011c669 · outbound

This paper cites an unresolved cited work.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment Unresolved cited work

Reference 2015

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T12:28:05.565413Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Pith citing papers

No inbound Pith citation observations are available.