Paper Citation Record · LEDGER

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

As of 16 August 2026, this Paper Citation Record lists 44 of 44 outbound references and 0 inbound Pith citation observations for arXiv:1908.02958.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.02958 v1

Coverage vector

measured 44 of 44 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T14:35:37.248893Z

measured 44 of 44 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

44 of 44 outbound references displayed

verified exact1
verified fuzzy39
unresolved4
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation f3bb03b4-7b47-49a8-b5cf-475d7a38285c · outbound

This paper cites Lasing in direct-bandgap GeSn alloy grown on Si,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Lasing in direct-bandgap GeSn alloy grown on Si,

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.937101Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 3747601c-098b-4f05-b400-fdebe5520926 · outbound

This paper cites Mid-infrared light emission > 3µ m wavelength from tensile strained GeSn microdisks,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Mid-infrared light emission > 3µ m wavelength from tensile strained GeSn microdisks,

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.923111Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 233a284d-4587-4c45-a25a-1ce4eb5b0738 · outbound

This paper cites Short-wave infrared leds from GeSn/SiGeSn multiple quant um wells,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Short-wave infrared leds from GeSn/SiGeSn multiple quant um wells,

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.908995Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 4e0a3895-15e0-4ffc-885c-446eac3d7a83 · outbound

This paper cites Sn-based w aveguide pin photodetector with strained GeSn/Ge multiple-quantum -well active layer,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Sn-based w aveguide pin photodetector with strained GeSn/Ge multiple-quantum -well active layer,

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.894932Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 0f715372-2358-4a5d-88b1-2e91967258ae · outbound

This paper cites Madelung, Semiconductor: Data Handbook.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Madelung, Semiconductor: Data Handbook

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.880262Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation c93733ba-8cc4-4e75-8280-cb4407163712 · outbound

This paper cites an unresolved cited work.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Unresolved cited work

Reference 6

Resolution: unresolved; raw_fallback, observed 2026-08-14T14:35:37.866636Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 97fed45c-9fa1-46d6-96e7-df5c114fa807 · outbound

This paper cites Uniaxially stressed germanium with fundamental direct band gap.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Uniaxially stressed germanium with fundamental direct band gap

Reference 7

Resolution: verified exact; local_arxiv, observed 2026-08-14T14:35:37.293357Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 961d7aab-fffe-4dea-8c85-797a09a7f0a3 · outbound

This paper cites Germanium under high tensile stress: nonlinear dependenc e of direct band gap vs strain,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Germanium under high tensile stress: nonlinear dependenc e of direct band gap vs strain,

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.852620Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 925a565f-6490-459f-a6c2-e0f9bac14c9e · outbound

This paper cites an unresolved cited work.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Unresolved cited work

Reference 9

Resolution: unresolved; raw_fallback, observed 2026-08-14T14:35:37.837522Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 55644ef8-f93b-41ef-a160-04132b97dc1b · outbound

This paper cites Strained-Germanium nanostructures for infrared photoni cs,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Strained-Germanium nanostructures for infrared photoni cs,

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.809444Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 8ecdd708-9734-4786-9ceb-9a3f982723ff · outbound

This paper cites Group IV direct band ga p photonics: Methods, challenges, and opportunities,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Group IV direct band ga p photonics: Methods, challenges, and opportunities,

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.795507Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation a3f3d195-1ea9-49c1-8676-935e731190e3 · outbound

This paper cites Dir ect-bandgap light-emitting germanium in tensilely strained nanomembr anes,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Dir ect-bandgap light-emitting germanium in tensilely strained nanomembr anes,

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.781512Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation d74a3ec3-3c5c-4925-844d-b7eee3554cac · outbound

This paper cites Study of the light emission in Ge lay ers and strained membranes on Si substrates,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Study of the light emission in Ge lay ers and strained membranes on Si substrates,

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.767132Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation f8f6eebc-7d0e-4d7d-9482-7354209fd41e · outbound

This paper cites Direct and ind irect band gaps in Ge under biaxial tensile strain investigated by phot oluminescence and photoreﬂectance studies,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Direct and ind irect band gaps in Ge under biaxial tensile strain investigated by phot oluminescence and photoreﬂectance studies,

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.752310Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 8540f136-79a2-4e07-abdd-d8458208046a · outbound

This paper cites Design of a Si-based latt ice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-in frared laser diode,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Design of a Si-based latt ice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-in frared laser diode,

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.737440Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 6c7138ea-03f8-4328-9911-bbdd7a37af8b · outbound

This paper cites Design of an electrically pumped SiGeSn/GeSn/SiG eSn double- heterostructure midinfrared laser,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Design of an electrically pumped SiGeSn/GeSn/SiG eSn double- heterostructure midinfrared laser,

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.722275Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 086e024b-410d-4987-9e2f-d33f22d5eb51 · outbound

This paper cites The direct and indirect bandgaps of unstrained Si xGe1−x−ySny and their photonic device applications,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model The direct and indirect bandgaps of unstrained Si xGe1−x−ySny and their photonic device applications,

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.707644Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 12de32d4-0072-42a0-b5d0-5c91f171ddbd · outbound

This paper cites Si–Ge–Sn alloys: From growth to applications,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Si–Ge–Sn alloys: From growth to applications,

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.692232Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation b370b17c-6345-4cd7-b63a-a4d744f114f0 · outbound

This paper cites Indirect-to-di rect gap transi- tion in strained and unstrained SnxGe1−x alloys,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Indirect-to-di rect gap transi- tion in strained and unstrained SnxGe1−x alloys,

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.677193Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 7af38e7e-f84c-4407-a8df-c1ce43eb067e · outbound

This paper cites High-k gate stac ks on low bandgap tensile strained Ge and GeSn alloys for ﬁeld-effect transistors,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model High-k gate stac ks on low bandgap tensile strained Ge and GeSn alloys for ﬁeld-effect transistors,

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.662449Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation f7f37e3e-5ae8-4e23-bd6b-b40f495cb134 · outbound

This paper cites Accurate strain measu rements in highly strained Ge microbridges,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Accurate strain measu rements in highly strained Ge microbridges,

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.647647Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 5a7d977d-6b82-4195-8331-483b93f65575 · outbound

This paper cites Str ain- induced pseudoheterostructure nanowires conﬁning carrie rs at room temperature with nanoscale-tunable band proﬁles,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Str ain- induced pseudoheterostructure nanowires conﬁning carrie rs at room temperature with nanoscale-tunable band proﬁles,

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.632327Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 6da9568e-1ae4-4a67-9a24-a9cbadfd02d3 · outbound

This paper cites Study of carrier statistics in uniaxially s trained Ge for a low-threshold ge laser,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Study of carrier statistics in uniaxially s trained Ge for a low-threshold ge laser,

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.617240Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 9c7a04f5-e453-4fc6-ab51-7de5d52c1118 · outbound

This paper cites Room tem perature lasing unraveled by a strong resonance between gain and para sitic absorption in uniaxially strained germanium,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Room tem perature lasing unraveled by a strong resonance between gain and para sitic absorption in uniaxially strained germanium,

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.600718Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation f5930b06-26b1-4cc8-b29c-edb564fc608e · outbound

This paper cites Study of material and optical properties of Si xGe1−x−ySny alloys for si-based optoelectronic device applications,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Study of material and optical properties of Si xGe1−x−ySny alloys for si-based optoelectronic device applications,

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.585611Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 2d1bfecb-2861-462c-91b1-35d9b082a055 · outbound

This paper cites Structura l and optical characteristics of Ge 1−xSnx/Ge superlattices grown on Ge-buffered Si (001) wafers,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Structura l and optical characteristics of Ge 1−xSnx/Ge superlattices grown on Ge-buffered Si (001) wafers,

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.570616Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 2b190d1d-5377-42de-add9-f5066f0bf30d · outbound

This paper cites Recent progress in GeSn growth and GeSn-based photonic devices,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Recent progress in GeSn growth and GeSn-based photonic devices,

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.556188Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 69035979-689f-4f51-ae99-8e913cf9aecc · outbound

This paper cites Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure,

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.541662Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation a09eb342-454b-4a19-8343-1965743ca534 · outbound

This paper cites Wave-function engineering and absorption spectr a in Si 0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type i quantum well,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Wave-function engineering and absorption spectr a in Si 0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type i quantum well,

Reference 29

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.527596Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 879b4066-ec9f-49d5-aa3e-5d54f8780d9f · outbound

This paper cites Indirect-to-direct b and gap transition in relaxed and strained Ge 1−x−ySixSny ternary alloys,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Indirect-to-direct b and gap transition in relaxed and strained Ge 1−x−ySixSny ternary alloys,

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.512603Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation a14b103c-a0ad-499c-9183-6c68e388e325 · outbound

This paper cites The electroni c band structure of Ge1−xSnx in the full composition range: indirect, direct, and invert ed gaps regimes, band offsets, and the Burstein-Moss effect,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model The electroni c band structure of Ge1−xSnx in the full composition range: indirect, direct, and invert ed gaps regimes, band offsets, and the Burstein-Moss effect,

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.497958Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 11acb279-e0ef-4329-bcc2-111ca60fb2b8 · outbound

This paper cites Electronic ba nd structure of compressively strained Ge 1−xSnx with x < 0.11 studied by contact- less electroreﬂectance,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Electronic ba nd structure of compressively strained Ge 1−xSnx with x < 0.11 studied by contact- less electroreﬂectance,

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.482331Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation e6c51085-e123-4bd7-9ac4-c91e0e942cce · outbound

This paper cites Band structure of Ge 1−xSnx alloy: a full-zone 30-band k·p model,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Band structure of Ge 1−xSnx alloy: a full-zone 30-band k·p model,

Reference 33

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.467464Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation d0dbf551-a726-4c18-aca1-e850d7a810b5 · outbound

This paper cites Strained si, ge, and Si 1−xGe1−x alloys modeled with a ﬁrst-principles-optimized full-zone k·p method,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Strained si, ge, and Si 1−xGe1−x alloys modeled with a ﬁrst-principles-optimized full-zone k·p method,

Reference 34

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.451521Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 5ddca9b7-d4a0-45d6-a9d9-8d502d54c40c · outbound

This paper cites an unresolved cited work.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Unresolved cited work

Reference 35

Resolution: unresolved; raw_fallback, observed 2026-08-14T14:35:37.436547Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 60b6d8d3-d512-4155-88aa-a51a0b593818 · outbound

This paper cites Non-linear behavior of germanium ele ctronic band structure under high strain,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Non-linear behavior of germanium ele ctronic band structure under high strain,

Reference 36

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.422279Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 88a59d21-8668-4ddd-aa63-a58a5cdb1447 · outbound

This paper cites Piezo-electroreﬂectance in Ge, GaAs, and Si,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Piezo-electroreﬂectance in Ge, GaAs, and Si,

Reference 37

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.407037Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 93e5e6c9-1f67-4a12-a0d8-5d69d3d362d2 · outbound

This paper cites Band lineups and deformation potent ials in the model-solid theory,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Band lineups and deformation potent ials in the model-solid theory,

Reference 38

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.391108Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation b50a2ff3-e2c5-47ae-828d-fa7de30d426f · outbound

This paper cites Wada and L.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Wada and L

Reference 39

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.374696Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 963f8a95-b564-477f-acb0-b9b1fc22f323 · outbound

This paper cites Efﬁcient iterative sch emes for ab initio total-energy calculations using a plane-wave basis set,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Efﬁcient iterative sch emes for ab initio total-energy calculations using a plane-wave basis set,

Reference 40

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.357322Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 2cac9c2c-530b-4491-9cc2-b2b6db9012fd · outbound

This paper cites Generalized g radient approximation made simple,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Generalized g radient approximation made simple,

Reference 41

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.341549Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 504dcd3a-22fa-4646-ac3e-5de7726b015f · outbound

This paper cites Projector augmented-wave method,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Projector augmented-wave method,

Reference 42

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.325535Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 9935c98f-b7cb-44b9-890b-dc23e82f24d5 · outbound

This paper cites Special points for Brill ouin-zone integrations,.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Special points for Brill ouin-zone integrations,

Reference 43

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T14:35:37.309699Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation eda3529c-fd32-400b-b464-6ac7871fc33f · outbound

This paper cites an unresolved cited work.

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model Unresolved cited work

Reference 100

Resolution: unresolved; raw_fallback, observed 2026-08-14T14:35:37.823615Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Pith citing papers

No inbound Pith citation observations are available.