The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET
classification
❄️ cond-mat.mes-hall
keywords
alignmentsuperlatticestransistorballisticbehaviorcontrolledcurrent-regimedecade
read the original abstract
This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.