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REVIEW 3 major objections 5 minor 45 references

Thermal circuit model for silicon quantum-dot array structures

T0 review · 3 major / 5 minor · reviewed 2026-08-11 · deepseek-v4-flash

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Pith's one-line read Heating in silicon quantum-dot arrays follows a compact thermal transmission-line law, and Coulomb-blockade thermometry on two devices reproduces the predicted power and distance dependence.

desk verdict A clean closed-form thermal model for Si QD arrays with honest limitations, but the validation is fit-heavy and the local-temperature Rex assumption is the main open question. read the letter →

arxiv 2412.14565 v2 pith:UTCL5DMC submitted 2024-12-19 cond-mat.mes-hall physics.app-ph

Takeru Utsugi , Nobuhiro Kusuno , Takuma Kuno , Noriyuki Lee , Itaru Yanagi , Toshiyuki Mine , Shinichi Saito , Digh Hisamoto
show 2 more authors
Ryuta Tsuchiya Hiroyuki Mizuno
This is my paper · ORCID
classification cond-mat.mes-hallphysics.app-ph
keywords siliconquantumdotsdotarraythermalcircuitmodeldistributed-elementtransmissionlineCoulombblockadethermometryelectrontemperaturecryogenicmanagement
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper tries to establish that heat spreading in silicon quantum-dot arrays—a known threat to qubit coherence, readout, and charge noise—obeys a compact formula rather than requiring full numerical simulation. The authors model the periodic gate stack as a thermal transmission line, with one resistance per unit length carrying heat along the gates and another carrying it away to the cold chip platform. The solution predicts that electron temperature rises as heating power to the power $1/(\beta+1)$ and decays exponentially with distance from the heat source, with a characteristic length $L_{th}$ set by the two resistances. The authors report that Coulomb-blockade thermometer measurements on two fabricated arrays with different gate pitches follow this law, giving concrete numbers for $a$ and $L_{th}$ that can be used in thermal design of larger silicon qubit circuits.

What carries the argument

The central object is the thermal distributed-element circuit, i.e. a thermal transmission line built from the periodic unit cell of plunger gate, barrier gate, and surrounding $\mathrm{SiO}_2$. Heat inflow along the array is represented by a per-unit-length resistance $R_{in}(x)=a_{in}/(T_e+T_{base})^{\beta_{in}}$, and heat dissipation out of the array by $R_{ex}(x)=a_{ex}/(T_e+T_{base})^{\beta_{ex}}$; under the assumptions $T_e\gg T_{base}$ and $\beta_{in}\approx\beta_{ex}\equiv\beta$, the telegrapher-like equations reduce to a solvable pair whose solution is Eq. (5). A finite, discrete version of the same circuit, analyzed by the ABCD transmission-matrix method, is shown to reproduce the same parameter dependence, which is what allows the model to be applied to the finite experimental devices.

What would settle it

Measure the electron-temperature decay length $L_{th}$ on two chips with identical gate arrays but different chip-to-cold-finger thermal paths, for example different bond-wire counts or a different printed-circuit-board material. If the extracted $L_{th}$ or $a$ changes while the gate array is unchanged, then the assumption that the dissipation resistance is set by the local temperature near the gate—rather than by the distant wiring and packaging—is wrong, and Eq. (5) does not describe the actual device.

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Extended reading notes

Core claim

The paper's central claim is that the electron temperature rise in a silicon quantum-dot array is set by a thermal transmission-line mechanism: because the gate array is periodic, heat flowing along the gates toward a qubit and heat leaking away toward the cold platform can be treated as distributed circuit elements. Solving the resulting pair of differential equations gives $T_e(x) = a e^{-x/L_{th}} P_0^{1/(\beta+1)}$, where $P_0$ is the local heating power, $x$ is the distance from the heat source, and the three device parameters are the prefactor $a$, the thermal characteristic length $L_{th}$, and the exponent $\beta$ (between 1 and 2). The authors validate this law with Coulomb-blockade thermometry on two silicon devices with different gate pitches, using current through barrier gates as local heaters and a nearby single-electron transistor as the thermometer; they report fitted values $a \approx 8.5$ and $7.9\ \mathrm{K}/\mu\mathrm{W}^{1/2}$ and $L_{th} \approx 264$ and $500\ \mathrm{nm}$ for the two pitches, with an added background heating power $P_B$, and conclude that the model reproduces the measured power and distance dependence.

Load-bearing premise

The load-bearing premise is that the resistance to heat leaving the gate region is set by the temperature right at the gate, rather than by the chip's wiring, board, or refrigerator; if a distant bottleneck dominates, the predicted exponential decay will not match the real device.

Editorial extensions

If this is right

  • Qubit temperature rise scales sublinearly with heating power, as $P_0^{1/(\beta+1)}$, so a tenfold power increase raises $T_e$ by roughly a factor between $10^{1/3}$ and $10^{1/2}$ for $\beta$ between 1 and 2.
  • Because the heat decay length $L_{th}$ is the distance over which heating falls by $1/e$, placing qubits several $L_{th}$ away from known heat sources such as gate heaters and microwave lines suppresses the heating effect exponentially.
  • The model turns thermal design into a two-parameter problem: minimize $a$ by reducing total thermal resistance, for example with metallic heat sinks above and below the gate layer, and minimize $L_{th}$ by increasing dissipation relative to inflow, for example with through-silicon vias.
  • The same exponential power law fits finite and discrete gate arrays as well as the ideal semi-infinite one, so the model scales to large arrays without re-derivation.
  • An additive background-heating term $P_B$ captures unintended heating sources such as lifetime broadening and charge-noise broadening in the thermometer, so the fitting procedure can quantify parasitic heating as well as intentional gate heating.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Beyond the paper: if this two-parameter characterization holds across many devices, $a$ and $L_{th}$ could become standard figures of merit for comparing quantum-dot fabrication processes and packaging, analogous to thermal resistance in classical chip design.
  • A testable scaling prediction follows from the separation of $a$ (a product of the two resistance coefficients) and $L_{th}$ (a ratio of them): devices with different gate pitch should show $L_{th}$ changing while $a$ stays nearly constant, which is the pattern reported for the two measured arrays.
  • Adding heat capacitance, as the paper proposes for dynamic effects, would give a thermal time constant; the testable extension is that gate pulses shorter than this time constant should heat qubits less than continuous power at the same average level.
  • Because the model hinges on the local effective temperature, phonon-engineering changes to the cryogenic thermal conductivity of the gate dielectric or channel should move $\beta$ and $L_{th}$ in predictable directions, giving a materials-based lever on heat spreading.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The paper proposes a thermal circuit model for silicon quantum-dot arrays, treating the periodic gate structure as a thermal transmission line with distributed inflow resistance R_in and dissipation resistance R_ex. Under assumptions of a local effective temperature proportional to T_e(x), T_e >> T_base, and beta_in ≈ beta_ex, the authors derive Eq. (5): T_e(x) = a exp(-x/L_th) P_0^{1/(beta+1)}. The model is tested on two quantum-dot devices with different gate pitches by using barrier gates as local heaters and measuring the electron temperature with Coulomb blockade thermometry at four heater-to-SET distances. Fitting yields a, L_th, beta, and a background power P_B, and the authors conclude that the model successfully reproduces the experimental results. The paper also gives design guidance based on the extracted parameters and discusses limitations.

Significance. The analytical expression in Eq. (5) is attractive because it reduces a distributed thermal problem to a closed form with two device parameters, and the design discussion connecting a and L_th to heat-sinking strategies such as through-silicon vias is useful. The paper is honest in stating its assumptions and limitations, and the finite-and-discrete circuit check in Supplementary Material C shows that Eq. (5) is not merely an artifact of the semi-infinite continuum idealization. The order-of-magnitude estimate of R_in in Supplementary Material B is an independent cross-check. However, the experimental validation is largely fit-based: a, L_th, beta, and P_B are all extracted from the same data that are then said to be reproduced by the model, and the key assumption that R_ex is governed by the local electron temperature is not independently verified. The model may well be correct, but the current evidence is not yet sufficient for the strength of the claims made.

major comments (3)
  1. [Sec. III B, Fig. 5(b)] The validation of Eq. (5) is essentially a fitting exercise: for each candidate beta in {1.0, 1.5, 2.0}, the amplitude A_i is obtained from the T_e-versus-P_0 data, and the inset then fits A_i(D) to a exp(-D/L_th). With only four heater positions (BG0-BG3), the data cannot distinguish exponential decay from other monotone decays, and the paper itself states in Sec. III B that it is difficult to determine whether the fitted curve strictly follows exponential decay. Moreover, beta is selected from three candidate values rather than measured, and P_B is an additional free parameter. Please provide an independent determination of beta or a prediction for a device/condition not used in the fit, or reframe the conclusion as 'consistent with' rather than 'successfully reproduces' the experimental results.
  2. [Sec. II, Eqs. (3)-(4)] The load-bearing assumption for the spatial dependence is that R_ex(x) = a_ex / T_e(x)^beta is governed by the local electron temperature near the gate structure. The actual heat-dissipation path continues through the silver paste, QBoard, aluminum bonding wires, and refrigerator, and the paper does not estimate this external resistance ('order estimation of Rex is difficult due to the complicated heat dissipation path'). If a substantial part of the series resistance lies in the packaging or wiring, the temperature gradient extends beyond the gate region, the local-temperature scaling for R_ex fails, and the extracted L_th becomes an effective fitting parameter rather than an intrinsic device property. Please quantify or experimentally bound the packaging/wiring contribution, or demonstrate that changing the substrate or mounting thermal sinking shifts the inferred L_th in the expected direction.
  3. [Sec. IV, Table I] Table I reports L_th = 264 nm for device A and 500 nm for device B, a factor-of-two difference in the central design parameter that is not explained, and no uncertainties are given for a and L_th. The independent order-of-magnitude check is performed only for R_in, and for device B the comparison is R_in T_e = 1.2 x 10^14 versus R_est_in = 3.5 x 10^14, a factor-of-three spread that is described as agreement. The conclusion that the model has been validated quantitatively should be softened, or the discrepancy should be traced to a concrete structural parameter, before the paper claims to have 'successfully quantified the thermal characteristics' of the two devices.
minor comments (5)
  1. [Sec. III A] Figure references are inconsistent: the device schematic is referred to as Fig. 7(a) and Fig. 7(b) in Sec. III A, while subsequent references use Figs. 4 and 5; please harmonize the numbering with the actual main-text figures.
  2. [Acknowledgments] Typo: 'Mooshot R&D' should be 'Moonshot R&D'.
  3. [Appendix C] The heading 'Finite and descrete thermal circuit model' contains a typo; 'descrete' should be 'discrete'.
  4. [Sec. IV, Table I] The table would be clearer if the notation R_in T_e and R_ex T_e were defined directly in the caption, and if confidence intervals for the extracted parameters were reported.
  5. [Sec. III B] The lever arm alpha = 0.08 and the correction V_correct are mentioned, but the uncertainty in alpha is not propagated into the reported T_e values; stating the resulting systematic uncertainty would strengthen the thermometry analysis.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: Eq. (5) is derived from stated constitutive assumptions; the experimental comparison is fit-based but not presented as an independent out-of-sample prediction, and the paper explicitly flags its own limitations.

full rationale

The derivation chain is self-contained. The paper postulates temperature-dependent distributed resistances Rin(x) = ain/[Te(x)]^βin and Rex(x) = aex/[Te(x)]^βex, assumes βin ≈ βex and Te ≫ Tbase, and then solves the resulting differential equations (1)-(4) to obtain Eq. (5). No equation is defined in terms of the target result, and no fitted parameter is renamed as a prediction. The experimental section fits Ai, PB, a, Lth, and β to the measured Te(P0) and Te(D) data and then states that the model 'reproduces' the results; this is an in-sample goodness-of-fit check, not an out-of-sample prediction, so it does not constitute fitted-input-called-prediction circularity. The paper explicitly acknowledges that 'it is difficult to determine from this experiment whether the fitted curve strictly follows exponential decay,' showing that the authors do not overclaim predictive force. The order-of-magnitude estimate of Rin from thermophysical properties (Appendix B) is an independent external cross-check, and the Rex assumption about local-temperature-dominated dissipation is a validity/robustness concern rather than a circularity. Self-citations (Refs. 40, 41) concern device fabrication and are not load-bearing for the thermal model. Overall, the paper is not circular; its limitations are those of a fit-based validation with a partly unverified modeling assumption.

Assumptions & free parameters 5 free parameters · 6 assumptions · 0 invented entities

The central result rests on a one-dimensional separation of heat flow into inflow and dissipation paths with power-law temperature-dependent resistances. These are modeling choices named as assumptions (i)-(v), not derived from microscopic physics. No new physical entities are introduced; the thermal transmission line is an analogy.

free parameters (5)
  • a (amplitude coefficient) = 8.5 K/sqrt(uW) (device A), 7.9 K/sqrt(uW) (device B) for beta=1
    Fitted from the distance dependence of the first-stage amplitudes Ai in the inset of Fig. 5(b). Sets the overall temperature rise scale.
  • Lth (thermal characteristic length) = 264 nm (device A), 500 nm (device B)
    Fitted exponential decay length of Ai with distance. No uncertainty is reported for this parameter.
  • beta (temperature exponent of thermal resistances) = Chosen from 1.0, 1.5, or 2.0 by best fit
    Not measured independently; the paper fits all three values and cannot distinguish them. Directly controls the power-law dependence on P0 and the distance decay.
  • PB (background heating power) = 0 to 2 uW across fits
    Introduced in Eq. (7) to account for lifetime and charge-noise broadening. It is an extra free parameter in every fit.
  • Ai (per-gate amplitude) = Four values per device, not tabulated
    First-stage fit amplitudes in Eq. (9), later reduced to a and Lth through the exponential distance fit. Listed for completeness.
assumptions (6)
  • standard math Solving the coupled differential equations (3)-(4) follows from standard calculus; the telegrapher's-equation analogy is assumed to describe heat flow.
    Used in Sec. II to obtain Eq. (5). This mathematical step is straightforward.
  • domain assumption The QD array can be treated as a semi-infinite periodic structure (assumption (i)).
    Listed as assumption (i) in Sec. II. Appendix C numerically checks a finite discrete circuit and finds Eq. (5) still fits.
  • ad hoc to paper Rin and Rex depend on a local effective temperature that is proportional to Te(x) (assumptions (ii) and (iii)).
    This is the key phenomenological step converting three-dimensional heat flow into a one-dimensional nonlinear transmission line. No microscopic derivation is given.
  • domain assumption Te(x) is much larger than Tbase (assumption (iv)), so Tbase is dropped from the equations.
    Valid in the experimental regime (1-30 K versus 8 mK), but it makes the model inapplicable near the base temperature.
  • ad hoc to paper beta_in is approximately beta_ex, denoted beta (assumption (v)).
    Justified by similarity of gate and insulator temperature dependence, but not verified experimentally. The value of beta is ultimately chosen by fitting the data.
  • domain assumption Heat flow separates cleanly into an inflow path and a dissipation path, with all heat eventually reaching the mixing chamber cooler.
    This is the basis for the circuit topology in Fig. 2(c). The dissipation path is acknowledged as difficult to estimate.

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Pith. "Pith review of Thermal circuit model for silicon quantum-dot array structures." pith.science (2026). https://pith.science/paper/UTCL5DMC

@misc{pith2026241214565,
  author       = {Pith},
  title        = {Pith review of: Thermal circuit model for silicon quantum-dot array structures},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/UTCL5DMC}},
  note         = {Machine review of arXiv:2412.14565}
}
read the original abstract

Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a simple thermal circuit model to describe the heating effect on silicon QD array structures. Noting that the QD array is a periodic structure, we represent it as a thermal distributed-element circuit, forming a thermal transmission line. We validate this model by measuring the electron temperature in a QD array device using Coulomb blockade thermometry, finding that the model effectively reproduces experimental results. This simple and scalable model can be used to develop the thermal design of large-scale silicon-based quantum computers.

Figures

Figures reproduced from arXiv: 2412.14565 by the authors.

Figure 1
Figure 1. FIG. 1. Conceptual diagram of the heating effects in silicon [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. (a) Model of the silicon QD array structure. The [PITH_FULL_IMAGE:figures/full_fig_p002_2.png] view at source ↗
Figure 4
Figure 4. FIG. 4. (a,b) Coulomb diamond of (a) the drain current of [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
Figures from the paper (6 more)
Figure 3
Figure 3. Figure 3: FIG. 3. (a) Schematic diagram of the device structure and [PITH_FULL_IMAGE:figures/full_fig_p005_3.png]
Figure 5
Figure 5. Figure 5: FIG. 5. (a) Schematic illustration of local heaters formed [PITH_FULL_IMAGE:figures/full_fig_p006_5.png]
Figure 6
Figure 6. Figure 6: FIG. 6. Thermophysical properties of represented materials [PITH_FULL_IMAGE:figures/full_fig_p007_6.png]
Figure 7
Figure 7. Figure 7: FIG. 7. (a) Finite and discrete thermal circuit model, and [PITH_FULL_IMAGE:figures/full_fig_p008_7.png]
Figure 8
Figure 8. Figure 8: FIG. 8. Estimated electron temperature [PITH_FULL_IMAGE:figures/full_fig_p009_8.png]
Figure 9
Figure 9. Figure 9: FIG. 9. Standard deviation error of [PITH_FULL_IMAGE:figures/full_fig_p009_9.png]

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Reference graph

Works this paper leans on

45 extracted references · 41 canonical work pages

  1. [1]

    Burkard , author T

    author author G. Burkard , author T. D. \ Ladd , author A. Pan , author J. M. \ Nichol , \ and\ author J. R. \ Petta ,\ title title Semiconductor spin qubits , \ @noop journal journal Reviews of Modern Physics \ volume 95 ,\ pages 025003 ( year 2023 ) NoStop

    work page 2023

  2. [2]

    Kodera ,\ title title Trends and prospects for semiconductor qubit research , \ @noop journal journal JSAP Review \ volume 2024 ,\ pages 240101 ( year 2024 ) NoStop

    author author T. Kodera ,\ title title Trends and prospects for semiconductor qubit research , \ @noop journal journal JSAP Review \ volume 2024 ,\ pages 240101 ( year 2024 ) NoStop

    work page 2024

  3. [3]

    author author L. M. K. \ Vandersypen , author H. Bluhm , author J. S. \ Clarke , author A. S. \ Dzurak , author R. Ishihara , author A. Morello , author D. J. \ Reilly , author L. R. \ Schreiber , \ and\ author M. Veldhorst ,\ title title Interfacing spin qubits in quantum dots and donors -hot, dense, and coherent , \ @noop journal journal NPJ Quantum Inf...

    work page 2017

  4. [4]

    Veldhorst , author H

    author author M. Veldhorst , author H. G. J. \ Eenink , author C.-H. \ Yang , \ and\ author A. S. \ Dzurak ,\ title title Silicon cmos architecture for a spin-based quantum computer , \ @noop journal journal Nature communications \ volume 8 ,\ pages 1766 ( year 2017 ) NoStop

    work page 2017

  5. [5]

    Borsoi , author N

    author author F. Borsoi , author N. W. \ Hendrickx , author V. John , author M. Meyer , author S. Motz , author F. van Riggelen , author A. Sammak , author S. L. \ de Snoo , author G. Scappucci , \ and\ author M. Veldhorst ,\ title title Shared control of a 16 semiconductor quantum dot crossbar array , \ @noop journal journal Nature Nanotechnology \ volum...

    work page 2024

  6. [6]

    Li , author L

    author author R. Li , author L. Petit , author D. P. \ Franke , author J. P. \ Dehollain , author J. Helsen , author M. Steudtner , author N. K. \ Thomas , author Z. R. \ Yoscovits , author K. J. \ Singh , author S. Wehner , et al. ,\ title title A crossbar network for silicon quantum dot qubits , \ @noop journal journal Science advances \ volume 4 ,\ pag...

    work page 2018

  7. [7]

    author author S. G. J. \ Philips , author M. T. \ Madzik , author S. V. \ Amitonov , author S. L. D. \ Snoo , author M. Russ , author N. Kalhor , author C. Volk , author W. I. L. \ Lawrie , author D. Brousse , author L. Tryputen , et al. ,\ title title Universal control of a six-qubit quantum processor in silicon , \ @noop journal journal Nature \ volume ...

    work page 2022

  8. [8]

    Lee , author R

    author author N. Lee , author R. Tsuchiya , author G. Shinkai , author Y. Kanno , author T. Mine , author T. Takahama , author R. Mizokuchi , author T. Kodera , author D. Hisamoto , \ and\ author H. Mizuno ,\ title title Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration , \ @noop journal...

    work page 2020

Show all 45 references
  1. [9]

    Lee , author R

    author author N. Lee , author R. Tsuchiya , author Y. Kanno , author T. Mine , author Y. Sasago , author G. Shinkai , author R. Mizokuchi , author J. Yoneda , author T. Kodera , author C. Yoshimura , author S. Saito , author D. Hisamoto , \ and\ author H. Mizuno ,\ title title...

    doi

  2. [10]

    author author J. Y. \ Huang , author R. Y. \ Su , author W. H. \ Lim , author M. Feng , author B. van Straaten , author B. Severin , author W. Gilbert , author N. Dumoulin Stuyck , author T. Tanttu , author S. Serrano , et al. ,\ title title High-fidelity spin qubit operation ...

    2024

  3. [11]

    Krinner , author S

    author author S. Krinner , author S. Storz , author P. Kurpiers , author P. Magnard , author J. Heinsoo , author R. Keller , author J. Lütolf , author C. Eichler , \ and\ author A. Wallraff ,\ title title Engineering cryogenic setups for 100-qubit scale superconducting circuit...

    doi

  4. [12]

    author author A. M. \ Savin , author J. P. \ Pekola , author D. V. \ Averin , \ and\ author V. K. \ Semenov ,\ title title Thermal budget of superconducting digital circuits at subkelvin temperatures , \ @noop journal journal Journal of applied physics \ volume 99 ( year 2006 ) NoStop

    2006

  5. [13]

    Kawakami , author P

    author author E. Kawakami , author P. Scarlino , author L. R. \ Schreiber , author J. R. \ Prance , author D. E. \ Savage , author M. G. \ Lagally , author M. A. \ Eriksson , \ and\ author L. M. K. \ Vandersypen ,\ title title Excitation of a si/sige quantum dot using an on-ch...

    2013

  6. [14]

    Takeda , author J

    author author K. Takeda , author J. Yoneda , author T. Otsuka , author T. Nakajima , author M. Delbecq , author G. Allison , author Y. Hoshi , author N. Usami , author K. Itoh , author S. Oda , et al. ,\ title title Optimized electrical control of a si/sige spin qubit in the p...

    2018

  7. [15]

    author author G. M. \ Noah , author T. H. \ Swift , author M. De Kruijf , author A. Gomez-Saiz , author J. J. \ Morton , \ and\ author M. F. \ Gonzalez-Zalba ,\ title title Cmos on-chip thermometry at deep cryogenic temperatures , \ @noop journal journal Applied Physics Review...

    2024

  8. [16]

    Undseth , author O

    author author B. Undseth , author O. Pietx-Casas , author E. Raymenants , author M. Mehmandoost , author M. T. \ Mkdzik , author S. G. \ Philips , author S. L. \ De Snoo , author D. J. \ Michalak , author S. V. \ Amitonov , author L. Tryputen , et al. ,\ title title Hotter is ...

    2023

  9. [17]

    Xue , author B

    author author X. Xue , author B. Patra , author J. P. G. V. \ Dijk , author N. Samkharadze , author S. Subramanian , author A. Corna , author B. P. \ Wuetz , author C. Jeon , author F. Sheikh , author E. Juarez-Hernandez , et al. ,\ title title Cmos-based cryogenic control of ...

    2021

  10. [18]

    Pauka , author K

    author author S. Pauka , author K. Das , author R. Kalra , author A. Moini , author Y. Yang , author M. Trainer , author A. Bousquet , author C. Cantaloube , author N. Dick , author G. Gardner , et al. ,\ title title A cryogenic cmos chip for generating control signals for mul...

    2021

  11. [19]

    author author S. K. \ Bartee , author W. Gilbert , author K. Zuo , author K. Das , author T. Tanttu , author C. H. \ Yang , author N. D. \ Stuyck , author S. J. \ Pauka , author R. Y. \ Su , author W. H. \ Lim , et al. ,\ title title Spin qubits with scalable milli-kelvin cmos...

    2024 arXiv

  12. [20]

    Petit , author J

    author author L. Petit , author J. M. \ Boter , author H. G. J. \ Eenink , author G. Droulers , author M. L. V. \ Tagliaferri , author R. Li , author D. P. \ Franke , author K. J. \ Singh , author J. S. \ Clarke , author R. N. \ Schouten , author V. V. \ Dobrovitski , author L...

    doi

  13. [21]

    Ono , author T

    author author K. Ono , author T. Mori , \ and\ author S. Moriyama ,\ title title High-temperature operation of a silicon qubit , \ @noop journal journal Scientific reports \ volume 9 ,\ pages 469 ( year 2019 ) NoStop

    2019

  14. [22]

    Petit , author H

    author author L. Petit , author H. G. J. \ Eenink , author M. Russ , author W. I. L. \ Lawrie , author N. W. \ Hendrickx , author S. G. J. \ Philips , author J. S. \ Clarke , author L. M. K. \ Vandersypen , \ and\ author M. Veldhorst ,\ title title Universal quantum logic in h...

    2020

  15. [23]

    author author C. H. \ Yang , author R. C. C. \ Leon , author J. C. C. \ Hwang , author A. Saraiva , author T. Tanttu , author W. Huang , author J. C. \ Lemyre , author K. W. \ Chan , author K. Y. \ Tan , author F. E. \ Hudson , et al. ,\ title title Operation of a silicon quan...

    2020

  16. [24]

    Petit , author M

    author author L. Petit , author M. Russ , author G. H. G. J. \ Eenink , author W. I. L. \ Lawrie , author J. S. \ Clarke , author L. M. K. \ Vandersypen , \ and\ author M. Veldhorst ,\ title title Design and integration of single-qubit rotations and two-qubit gates in silicon ...

    2022

  17. [25]

    author author L. C. \ Camenzind , author S. Geyer , author A. Fuhrer , author R. J. \ Warburton , author D. M. \ Zumb \"u hl , \ and\ author A. V. \ Kuhlmann ,\ title title A hole spin qubit in a fin field-effect transistor above 4 kelvin , \ @noop journal journal Nature Elect...

    2022

  18. [26]

    author author C. W. J. \ Beenakker ,\ title title Theory of coulomb-blockade oscillations in the conductance of a quantum dot , \ 10.1103/PhysRevB.44.1646 journal journal Phys. Rev. B \ volume 44 ,\ pages 1646--1656 ( year 1991 ) NoStop

    doi

  19. [27]

    Giazotto , author T

    author author F. Giazotto , author T. T. \ Heikkil \"a , author A. Luukanen , author A. M. \ Savin , \ and\ author J. P. \ Pekola ,\ title title Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications , \ @noop journal journal Reviews of Modern...

    2006

  20. [28]

    Rossi , author T

    author author A. Rossi , author T. Ferrus , \ and\ author D. Williams ,\ title title Electron temperature in electrically isolated si double quantum dots , \ @noop journal journal Applied Physics Letters \ volume 100 ( year 2012 ) NoStop

    2012

  21. [29]

    author author L. W. \ Molenkamp , author T. Gravier , author H. van Houten , author O. J. A. \ Buijk , author M. A. A. \ Mabesoone , \ and\ author C. T. \ Foxon ,\ title title Peltier coefficient and thermal conductance of a quantum point contact , \ 10.1103/PhysRevLett.68.376...

    doi

  22. [30]

    Chiatti , author J

    author author O. Chiatti , author J. T. \ Nicholls , author Y. Y. \ Proskuryakov , author N. Lumpkin , author I. Farrer , \ and\ author D. A. \ Ritchie ,\ title title Quantum thermal conductance of electrons in a one-dimensional wire , \ 10.1103/PhysRevLett.97.056601 journal j...

    doi

  23. [31]

    author author E. A. \ Hoffmann , author N. Nakpathomkun , author A. I. \ Persson , author H. Linke , author H. A. \ Nilsson , \ and\ author L. Samuelson ,\ title title Quantum-dot thermometry , \ @noop journal journal Applied Physics Letters \ volume 91 ( year 2007 ) NoStop

    2007

  24. [32]

    author author E. A. \ Hoffmann , author H. A. \ Nilsson , author J. E. \ Matthews , author N. Nakpathomkun , author A. I. \ Persson , author L. Samuelson , \ and\ author H. Linke ,\ title title Measuring temperature gradients over nanometer length scales , \ @noop journal jour...

    2009

  25. [33]

    Dutta , author J

    author author B. Dutta , author J. T. \ Peltonen , author D. S. \ Antonenko , author M. Meschke , author M. A. \ Skvortsov , author B. Kubala , author J. K\"onig , author C. B. \ Winkelmann , author H. Courtois , \ and\ author J. P. \ Pekola ,\ title title Thermal conductance ...

    doi

  26. [34]

    de Kruijf , author G

    author author M. de Kruijf , author G. M. \ Noah , author A. Gomez-Saiz , author J. J. \ Morton , \ and\ author M. F. \ Gonzalez-Zalba ,\ title title Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon , \ @noop journal journal Chip \ ,\ pag...

    2024

  27. [35]

    Champain , author V

    author author V. Champain , author V. Schmitt , author B. Bertrand , author H. Niebojewski , author R. Maurand , author X. Jehl , author C. Winkelmann , author S. De Franceschi , \ and\ author B. Brun ,\ title title Real-time millikelvin thermometry in a semiconductor-qubit ar...

    doi

  28. [36]

    Duthil ,\ title title Material properties at low temperature , \ @noop journal journal CAS - CERN Accelerator School \ ,\ pages 77–95 ( year 2014 ) NoStop

    author author P. Duthil ,\ title title Material properties at low temperature , \ @noop journal journal CAS - CERN Accelerator School \ ,\ pages 77–95 ( year 2014 ) NoStop

    2014

  29. [37]

    author author J. Ekin ,\ @noop title Experimental techniques for low-temperature measurements: cryostat design, material properties and superconductor critical-current testing \ ( publisher Oxford university press ,\ year 2006 ) NoStop

    2006

  30. [38]

    https://tpds.db.aist.go.jp/index_en.html title Thermophysical Property Database ,\ organization National Institute of Advanced Industrial Science and Technology NoStop

  31. [39]

    Sato \ and\ author T

    author author Y. Sato \ and\ author T. Kawahara ,\ title title Simulation of temperature-dependent quantum gates in silicon quantum dots with frequency shifts , \ @noop journal journal arXiv preprint arXiv:2407.05295 \ ( year 2024 ) NoStop

    2024 arXiv

  32. [40]

    Utsugi , author N

    author author T. Utsugi , author N. Lee , author R. Tsuchiya , author T. Mine , author R. Mizokuchi , author J. Yoneda , author T. Kodera , author S. Saito , author D. Hisamoto , \ and\ author H. Mizuno ,\ title title Single-electron pump in a quantum dot array for silicon qua...

    2023

  33. [41]

    Kuno , author T

    author author T. Kuno , author T. Utsugi , author R. Tsuchiya , author N. Lee , author T. Mine , author I. Yanagi , author R. Mizokuchi , author J. Yoneda , author T. Kodera , author S. Saito , et al. ,\ title title Single-electron charge sensor self-aligned to a quantum dot a...

    2025

  34. [42]

    author author L. P. \ Kouwenhoven , author C. M. \ Marcus , author P. L. \ McEuen , author S. Tarucha , author R. M. \ Westervelt , \ and\ author N. S. \ Wingreen ,\ title title Electron transport in quantum dots , \ in\ @noop booktitle Mesoscopic electron transport \ ( publis...

    1997

  35. [43]

    Taguchi , author T

    author author M. Taguchi , author T. Okidono , author T. Miki , \ and\ author M. Nagata ,\ title title Si interposer with cu tsvs on cu substrate thermally and electrically anchoring qubit chips in millikelvin assembly , \ in\ @noop booktitle 2024 IEEE 74th Electronic Componen...

    2024

  36. [44]

    Keith , author S

    author author D. Keith , author S. Gorman , author L. Kranz , author Y. He , author J. Keizer , author M. Broome , \ and\ author M. Simmons ,\ title title Benchmarking high fidelity single-shot readout of semiconductor qubits , \ @noop journal journal New Journal of Physics \ ...

    2019

  37. [45]

    Maire , author R

    author author J. Maire , author R. Anufriev , author R. Yanagisawa , author A. Ramiere , author S. Volz , \ and\ author M. Nomura ,\ title title Heat conduction tuning by wave nature of phonons , \ @noop journal journal Science advances \ volume 3 ,\ pages e1700027 ( year 2017...

    2017

Pith tools

Reviewed August 11, 2026 · model on record in the stance chip above.