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Charge Tunneling Rates in Ultrasmall Junctions

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arxiv cond-mat/0508728 v1 pith:V6PKVGSB submitted 2005-08-30 cond-mat.mes-hall

Gert-Ludwig Ingold (Augsburg) , Yu. V. Nazarov (Delft) This is my paper · ORCID
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keywords junctionsratestunnelingelectronsinglechargedescriptiondouble
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1. Introduction 2. Description of the environment 3. Electron tunneling rates for single tunnel junctions 4. Examples of electromagnetic environments 5. Tunneling rates in Josephson junctions 6. Double junction and single electron transistor 7. Microscopic foundation

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Joint Communication and Indoor Positioning Based on Visible Light in the Presence of Dimming

    eess.SP 2025-08 conditional novelty 6.0 of 10

    One kinetic equation for the charge distribution in a small Josephson junction describes both dual (quantum) and classical Shapiro steps, with the regime crossover set by a single relaxation time.

  2. Hybrid metal-semiconductor quantum dots in InAs as a platform for quantum simulation

    cond-mat.mes-hall 2025-08 conditional novelty 6.0 of 10

    A hybrid metal-InAs island with near-perfect interface transparency forms a uniform, gate-tunable single-electron transistor, supporting a scalable route to quantum dot arrays for quantum simulation.

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