Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-09T00:20:00.037926Z
Paper Citation Record · LEDGER
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
As of 23 August 2026, this Paper Citation Record lists 16 of 16 outbound references and 0 inbound Pith citation observations for arXiv:2502.03912.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-23T06:30:58.430688+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
16 of 16 outbound references displayed
- verified exact10
- verified fuzzy4
- unresolved2
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 26027df1-88f6-42a7-9797-eaf654988a81 · outbound
This paper cites Memristive crossbar arrays for brain-inspired computing,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Memristive crossbar arrays for brain-inspired computing,
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-09T00:20:01.350041Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 5e57910b-be99-4d4f-927c-bdcbe30cbdd1 · outbound
This paper cites Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar,
Reference 2
- Resolution
- verified exact
- doi, observed 2026-08-09T00:20:00.118084Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 2fb69b8c-262b-4965-9964-2c47d9f9a655 · outbound
This paper cites Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing,
Reference 3
- Resolution
- verified exact
- doi, observed 2026-08-09T00:20:00.106908Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 2736d9f6-3bce-4fa6-b50d-0b3f2618d67d · outbound
This paper cites Memristor Crossbar Arrays Performing Quantum Algorithms,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Memristor Crossbar Arrays Performing Quantum Algorithms,
Reference 4
- Resolution
- unresolved
- no resolver link, observed 2026-08-09T00:19:59.992798Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation f310e7bc-199f-442e-a967-bd030611c97d · outbound
This paper cites Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping,
Reference 5
- Resolution
- unresolved
- no resolver link, observed 2026-08-09T00:19:59.996762Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 4f08b8b8-adde-4735-85d7-02a3e84bc5a0 · outbound
This paper cites Analog Synaptic Behavior of a Silicon Nitride Memristor,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Analog Synaptic Behavior of a Silicon Nitride Memristor,
Reference 6
- Resolution
- verified exact
- doi, observed 2026-08-09T00:20:00.095222Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 35708d7b-9c26-4e9a-a82b-f56962cc07eb · outbound
This paper cites Logic-in-memory application of CMOS compatible silicon nitride memristor,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Logic-in-memory application of CMOS compatible silicon nitride memristor,
Reference 7
- Resolution
- verified exact
- arxiv_id_nonexistent, observed 2026-08-09T00:20:01.146275Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation e0248e2a-5d23-400a-8280-acaaaeb97d0b · outbound
This paper cites In- memory-computing realization with a photodiode/memristor based vision sensor,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs In- memory-computing realization with a photodiode/memristor based vision sensor,
Reference 8
- Resolution
- verified exact
- doi, observed 2026-08-09T00:20:00.083420Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 669e4306-976a-4352-ab97-7a50ff4d3d44 · outbound
This paper cites True random number generator based on multi-state silicon nitride memristor entropy sources combination,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs True random number generator based on multi-state silicon nitride memristor entropy sources combination,
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-09T00:20:01.337485Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 09473985-104a-40c0-a675-cfaca6d6b42e · outbound
This paper cites Effect of SOI substrate on silicon nitride resistance switching using MIS structure,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Effect of SOI substrate on silicon nitride resistance switching using MIS structure,
Reference 10
- Resolution
- verified exact
- arxiv_id_nonexistent, observed 2026-08-09T00:20:00.945356Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation ffda2911-7a84-474b-8a68-ff94714a91b0 · outbound
This paper cites Study of SiO2/Si Interface by Surface Techniques,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Study of SiO2/Si Interface by Surface Techniques,
Reference 11
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-09T00:20:01.324849Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 418274a5-ea94-4732-be70-1f830238fb43 · outbound
This paper cites Multi-level resistance switching and random telegraph noise analysis of nitride based memristors,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Multi-level resistance switching and random telegraph noise analysis of nitride based memristors,
Reference 12
- Resolution
- verified exact
- arxiv_id_nonexistent, observed 2026-08-09T00:20:00.751670Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation a19588a6-8ead-4d18-bc82-9f5d5df20cb5 · outbound
This paper cites A physics-based RTN variability model for MOSFETs,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs A physics-based RTN variability model for MOSFETs,
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-09T00:20:01.312859Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 07c550df-581e-459f-bd98-749a6d472470 · outbound
This paper cites Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy,
Reference 14
- Resolution
- verified exact
- doi, observed 2026-08-09T00:20:00.070417Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 9b0ba664-8de7-41a3-8882-cfc1bdd2e926 · outbound
This paper cites Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells,
Reference 15
- Resolution
- verified exact
- arxiv_id_nonexistent, observed 2026-08-09T00:20:00.562178Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 8bd0bb3e-8765-43d3-a5ed-2bb9445953ed · outbound
This paper cites Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability,.
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability,
Reference 16
- Resolution
- verified exact
- arxiv_id_nonexistent, observed 2026-08-09T00:20:00.334660Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Pith citing papers
No inbound Pith citation observations are available.