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Si doping on MgB2 thin films by pulsed laser deposition

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arxiv cond-mat/0311055 v2 pith:W6V7W6FS submitted 2003-11-04 cond-mat.supr-con

Y. Zhao , M. Ionescu , J. Horvat , A. H. Li , S. X. Dou This is my paper · ORCID
classification cond-mat.supr-con
keywords filmfilmsmgb2dopinglevelcomparedcontroldeposition
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A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. The doped films were deposited at 250 C and annealed in situ at 685 C for 1min. Up to a Si doping level of ~11wt%, the superconducting transition temperature (Tc) of the film does not change significantly, as compared to the control, undoped film. The magnetic critical current density (Jc) of the film at 5K was increased by 50% for a Si doping level of ~3.5wt%, as compared to the control film. Also, the irreversibility field of Si-doped MgB2 films (Hirr) at low temperature is higher than for the undoped film.

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