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Paper Citation Record · LEDGER

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

As of 16 August 2026, this Paper Citation Record lists 5 of 5 outbound references and 0 inbound Pith citation observations for arXiv:1908.07096.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.07096 v1

Coverage vector

measured 5 of 5 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T12:30:59.020031Z

measured 5 of 5 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-15T06:32:42.880941+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

5 of 5 outbound references displayed

  • verified exact0
  • verified fuzzy5
  • unresolved0
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 73873a5c-b788-4a73-af33-cf97964d33da · outbound

This paper cites Figure S2 | The GPA dilatation and rotation maps along [002], [ 2-20], [1-1-1] and [-11-1] of the micrograph displayed in Figure 1a.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure Figure S2 | The GPA dilatation and rotation maps along [002], [ 2-20], [1-1-1] and [-11-1] of the micrograph displayed in Figure 1a

Reference 1

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:30:59.111124Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:30:59.001352Z digest=sha256:0b03b135a75b93b5ce8231c614e6fb50b59c692735101deccf542cbc8d4d80ed

Observation 56725f9b-c144-43fa-9d31-41f75ab280bf · outbound

This paper cites Regarding ASLD, Eu atoms are characterized by a non-neglec table neutron absorption cross-section, which is wavelength-dependent (J.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure Regarding ASLD, Eu atoms are characterized by a non-neglec table neutron absorption cross-section, which is wavelength-dependent (J

Reference 2

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:30:59.083437Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:30:59.010808Z digest=sha256:2435b07bdbd8096d4bf93b4938b46eacf25ed7330bb1adb64f4d4352d94a85b4

Observation 0530b39a-3c2d-4a95-a267-c03cfc796714 · outbound

This paper cites The nominal sample structure for the RXRR measurements is As (20 nm)/EuS (2.5 nm)/InAs (15 nm)/GaSb (bulk).

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure The nominal sample structure for the RXRR measurements is As (20 nm)/EuS (2.5 nm)/InAs (15 nm)/GaSb (bulk)

Reference 3

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:30:59.069224Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:30:59.015060Z digest=sha256:1640147fd53ccb5481331641d58946997bac5cb0e761f41f6cd3736310c76e88

Observation abaa158b-a5eb-4487-a91e-d48df7952b6b · outbound

This paper cites As shown in bottom panel of Fig.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure As shown in bottom panel of Fig

Reference 4

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:30:59.054459Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:30:59.020031Z digest=sha256:03f579d58385ed15553a2f029dbfa0b2211f12e8e45d021172d8c45a79682c2c

Observation 80839fc7-39ff-41a2-abe8-48a652746e5d · outbound

This paper cites c,d, HAADF micrograph and simulated HAADF of the proposed model through the [110] zone axis (front view).

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure c,d, HAADF micrograph and simulated HAADF of the proposed model through the [110] zone axis (front view)

Reference 110

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:30:59.097208Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

source=pdf_text observed=2026-08-14T12:30:59.006313Z digest=sha256:aa017e5668f035718d4ddd92464b4704d843f7f141ee1e4c06eca4b666e69f84

Pith citing papers

No inbound Pith citation observations are available.