Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-14T12:30:59.020031Z
Paper Citation Record · LEDGER
As of 16 August 2026, this Paper Citation Record lists 5 of 5 outbound references and 0 inbound Pith citation observations for arXiv:1908.07096.
A citation records a reference. It does not transfer a finding from one paper to another.
Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-14T12:30:59.020031Z
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-15T06:32:42.880941+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
5 of 5 outbound references displayed
External citation measurements
No source-named external measurement is stored.
Observation 73873a5c-b788-4a73-af33-cf97964d33da · outbound
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure Figure S2 | The GPA dilatation and rotation maps along [002], [ 2-20], [1-1-1] and [-11-1] of the micrograph displayed in Figure 1a
Reference 1
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.
Observation 56725f9b-c144-43fa-9d31-41f75ab280bf · outbound
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure Regarding ASLD, Eu atoms are characterized by a non-neglec table neutron absorption cross-section, which is wavelength-dependent (J
Reference 2
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.
Observation 0530b39a-3c2d-4a95-a267-c03cfc796714 · outbound
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure The nominal sample structure for the RXRR measurements is As (20 nm)/EuS (2.5 nm)/InAs (15 nm)/GaSb (bulk)
Reference 3
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.
Observation abaa158b-a5eb-4487-a91e-d48df7952b6b · outbound
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure As shown in bottom panel of Fig
Reference 4
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.
Observation 80839fc7-39ff-41a2-abe8-48a652746e5d · outbound
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure c,d, HAADF micrograph and simulated HAADF of the proposed model through the [110] zone axis (front view)
Reference 110
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.
No inbound Pith citation observations are available.