pith. sign in

arxiv: 1111.0560 · v1 · pith:WW7YVDQInew · submitted 2011-11-02 · ❄️ cond-mat.mes-hall

Reading and writing charge on graphene devices

classification ❄️ cond-mat.mes-hall
keywords chargegraphenewritingdeviceslocalneutralitypointscanning
0
0 comments X
read the original abstract

We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.