Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

A. Russo; C. Bongiorno; E. Zanetti; F. Cordiano; F. Giannazzo; F. Roccaforte; M. Saggio; P. Fiorenza; S. M. Alessandrino

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Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

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arxiv 2410.19545 v1 pith:WZS3ON7Q submitted 2024-10-25 physics.app-ph

P. Fiorenza , F. Cordiano , S. M. Alessandrino , A. Russo , E. Zanetti , M. Saggio , C. Bongiorno , F. Giannazzo

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F. Roccaforte

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keywords breakdowndielectricgateh-sicmosfetspowerassessedbias

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The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

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