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Scanning gate microscopy of current-annealed single layer graphene

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arxiv 0911.3832 v2 pith:XACRXS4Y submitted 2009-11-19 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords localannealingcurrentcurrent-annealeddensitygategrapheneinhomogeneity
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We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.

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