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Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe

T0 review · 2 major / 5 minor · reviewed 2026-08-08 · deepseek-v4-flash

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Pith's one-line read PrSb0.3Te1.7 shows a 97% negative transverse magnetoresistance at 9 T and 2 K, attributed to magnetic-field-driven band restructuring amplified by the strongest orthorhombic distortion in the PrSbxTe2-x series.

desk verdict Plausible new large negative MR in PrSb0.3Te1.7, but the missing field-reversal symmetry check is a real hole in the central claim. read the letter →

arxiv 2502.04203 v1 pith:XF3PUCNX submitted 2025-02-06 cond-mat.mtrl-sci

Gokul Acharya , Krishna Pandey , M.M. Sharma , Jian Wang , Santosh Karki Chhetri , Md Rafique Un Nabi , Dinesh Upreti , Rabindra Basnet
show 2 more authors
Josh Sakon Jin Hu
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords negativemagnetoresistancetopologicalsemimetalPrSbTerare-earthantimonytelluridemagnetotransportorthorhombicdistortionchargedensitywavemagneticanisotropy
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper studies a family of layered rare-earth antimony tellurides, PrSbxTe2-x, in which the Sb:Te ratio tunes the crystal structure. Replacing enough antimony with tellurium converts the tetragonal lattice to an orthorhombic one, with the strongest distortion at $x = 0.3$, and at that same composition the material shows a very large negative transverse magnetoresistance: resistance falls by 97% at 9 T and 2 K when the field is perpendicular to the layers. The effect is accompanied by a two-fold angular anisotropy that mirrors the magnetic anisotropy, even though the material shows no long-range magnetic order down to 1.8 K. The paper argues the negative MR is not the chiral-anomaly effect, because the field is perpendicular to the current, but rather a magnetic-field-driven reshaping of the electronic bands—possibly closing or shrinking a gap—amplified by the unusually strong orthorhombic distortion at $x = 0.3$. If correct, the finding makes PrSb0.3Te1.7 a tunable platform for large magnetoresistance without requiring magnetic order.

What carries the argument

The load-bearing object is the specific off-stoichiometric composition PrSb0.3Te1.7 in the orthorhombic Pmmn phase, an orthorhombic crystal structure in which the antimony square nets are distorted; its in-plane lattice distortion—the largest value of $(a-b)/((a+b)/2)$ in the series—coincides with a switch in Hall carrier sign and a minimum carrier density near $\sim 10^{22}\,\mathrm{cm}^{-3}$. The mechanism the paper invokes is a magnetic-field-driven modification of the electronic structure: strong magnetic correlations with two-fold anisotropy couple to the bands through exchange splitting or spin-orbit coupling and shrink or close a gap, possibly a charge-density-wave gap associated with the orthorhombic distortion, so in-plane conduction rises sharply as the field grows. The angular coincidence between the two-fold MR anisotropy and the two-fold magnetization anisotropy is the key experimental evidence that magnetism and transport are linked.

What would settle it

One concrete test is angle-resolved photoemission or high-field magneto-optical spectroscopy on PrSb0.3Te1.7: the band-modification scenario predicts that a perpendicular magnetic field approaching 9 T shifts the bands or closes an existing gap near the Fermi level, visible as a change in the electronic density of states; observing no such change would falsify the proposed mechanism while leaving the raw resistivity drop unexplained by it.

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Extended reading notes

Core claim

The central discovery is that PrSb0.3Te1.7, a composition in the topological semimetal family PrSbxTe2-x, exhibits a very large negative transverse magnetoresistance of about 97% at 9 T and 2 K with the field perpendicular to the ab-plane, corresponding to roughly a 3,000% change when normalized to the high-field resistivity. At low fields a small positive MR dip appears below about 1.5 T at 2 K, reminiscent of weak antilocalization, but the dominant high-field response is a sharp resistivity collapse. The paper establishes that this composition has the strongest orthorhombic distortion in the series, that its Hall effect switches from hole-dominated to electron-dominated with a minimum carrier density near $x = 0.3$, and that its magnetic susceptibility is anisotropic with two-fold symmetry but shows no long-range order down to 1.8 K. The angular dependence of the magnetoresistance mimics that two-fold anisotropy, with maximum negative MR for $H\perp ab$. The authors propose that the negative MR arises from magnetic-field-driven modification of the electronic band structure—likely a reduction or closure of a charge-density-wave-related gap—rather than from the chiral anomaly, which cannot explain transverse negative MR, or from simple spin scattering, which would not be so composition-sensitive.

Load-bearing premise

The load-bearing premise is that the high-temperature Hall data (measured above 100 K) faithfully reveal the low-temperature electronic structure around $x = 0.3$; if a gap or localization develops below 100 K that changes the carrier balance, the band-structure explanation for the large negative magnetoresistance would lack support, even though the measured magnetoresistance itself would remain.

Editorial extensions

If this is right

  • PrSb0.3Te1.7 becomes a concrete platform for studying large negative magnetoresistance in a topological material without long-range magnetic order, with the effect controlled by composition.
  • The two-fold angular anisotropy of the magnetoresistance, mirroring the magnetic anisotropy, implies that the field direction can tune the resistance by up to roughly 5,800% at 9 T and 3 K.
  • Composition tuning in the LnSbxTe2-x family can switch hole-dominated to electron-dominated transport while drastically changing carrier density, offering a route to engineer band structures and magnetotransport in related rare-earth compounds.
  • If the field-driven gap-reduction mechanism is correct, compositions whose orthorhombic distortion or charge-density-wave gap is tuned near the verge of closure could show even larger or higher-temperature negative magnetoresistance.
  • The low-field positive MR dip reminiscent of weak antilocalization indicates active spin-orbit coupling, a feature that could matter for spintronic device concepts.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the band-structure modification picture is right, the MR should come with a field-induced enhancement of the electronic specific heat coefficient gamma or a detectable change in the low-temperature Hall carrier density; this is directly testable on the same crystals.
  • The re-entrant tetragonal phase at $x = 0.05$, which is tellurium-rich but undistorted, offers a natural control experiment: if its transverse MR is small and positive like the Sb-rich samples, the orthorhombic distortion is the decisive structural ingredient for the large negative MR.
  • The carrier-density minimum near $x = 0.3$ hints at a Lifshitz-like electronic transition; angle-resolved photoemission across the series could reveal whether a Van Hove singularity or band inversion near the Fermi level is responsible for the sensitivity to magnetic field.
  • The low-field positive MR dip, resembling weak antilocalization, suggests a tunable crossover field; engineering that dip field by composition could produce a magnetoresistive switch operating at a few tesla.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 5 minor

Summary. This manuscript reports a composition-dependent study of the topological material family PrSbxTe2-x (0.05 < x < 0.91), combining structural characterization, resistivity, Hall effect, magnetization, and heat capacity measurements. The central experimental claim is that the off-stoichiometric composition PrSb0.3Te1.7 exhibits very large negative transverse magnetoresistance, reaching 97% at 2 K and 9 T for H perpendicular to the ab-plane, together with a two-fold angular anisotropy that mirrors the magnetic anisotropy. The authors propose that the negative MR arises from magnetic-field-driven modification of the electronic structure, possibly aided by the strongest orthorhombic distortion in the series, while explicitly noting that the microscopic mechanism remains unresolved.

Significance. If the 97% negative transverse MR is genuine, this is a noteworthy addition to the small family of materials showing large negative MR without long-range magnetic order, and it would strengthen the case for LnSbxTe2-x as a tunable platform for magnetotransport studies. The systematic composition dependence, structural phase mapping, and the observation of re-entrant tetragonal structure at very low Sb content are useful experimental contributions. However, the central observation is not yet fully established because the paper does not report symmetrized longitudinal-resistivity measurements, leaving a concrete risk that contact misalignment and Hall-voltage contamination contribute to the reported effect.

major comments (2)
  1. [Section III, Fig. 3b and the Hall-effect paragraph] The paper does not report symmetrized measurements of the longitudinal resistivity (averaging the measured voltage at +B and -B), nor any test of contact alignment. The authors themselves state that for strong-MR samples "it is difficult to obtain meaningful Hall effect data at low temperatures" because of "the inevitable mixture of the longitudinal resistivity component." The converse contamination, namely pickup of the antisymmetric Hall voltage by the nominal longitudinal contacts, is a real risk, and it is particularly severe for the H⊥ab configuration used to report the 97% MR, because the Hall field then lies in the ab-plane and can be collected by misaligned in-plane voltage contacts. The absence of the effect for H//ab, where the Hall field is out of plane, is exactly the pattern such a contact artifact would produce. Please provide resistivity data for both field polarities with the antisymmetric component removed, and demonstrate that the 97% MR and the angular pattern in Fig. 6 survive this procedure.
  2. [Section III, Fig. 4 and the paragraph on Hall effect] The carrier density and carrier type for the strong-negative-MR compositions are extracted only from Hall-effect data above 100 K, because low-temperature Hall data are not considered meaningful. The paper then uses these high-temperature data to claim "a major transformation in the electronic structure around the x = 0.3 composition" and links this transformation to the low-temperature negative MR. Since the negative MR develops below roughly 50 K, the high-temperature Hall data do not constrain the low-temperature electronic state; a CDW gap, localization, or other low-temperature reconstruction could invalidate the band-structure narrative. Please either provide low-temperature Hall data or explicitly reframe the claim as a high-temperature observation that is not directly connected to the MR mechanism.
minor comments (5)
  1. [Section III, paragraph after Fig. 5] In the sentence describing field-dependent magnetization, the text refers to "H⊥ab (Fig. 4c)" but Fig. 4c is a Hall-effect panel; the out-of-plane magnetization data appear in Fig. 5c. Please correct the cross-reference.
  2. [Section III, definition of MR] The MR is defined with an absolute value, |[ρ(H)-ρ(0)]|/ρ(0). Please specify whether ρ(H) ever changes sign, and report the signed MR so that the low-field positive-MR dip and the high-field negative MR are unambiguously distinguished.
  3. [Section II and Fig. 2b] The statement that the strong negative MR and low-field dip are "reproducible in multiple samples" is not supported by shown data; please include sample-to-sample comparison or error bars on the MR values.
  4. [Title] The title contains a typo: "off-Stochiometric" should be "off-Stoichiometric."
  5. [Section III, references] Reference [49] (Xu et al., PRB 92, 205310) is cited for the statement that the nodal-line Dirac crossing near the Fermi energy is protected by mirror symmetry of the P4/nmm lattice, but that reference concerns an oxide topological insulator and does not appear relevant; please verify the citation or replace it with the appropriate symmetry-protection reference for ZrSiS-type materials.

Circularity Check

0 steps flagged · score 1.0 of 10

No significant circularity: the central MR result is a direct measurement, and self-citations are background context only.

full rationale

The paper's central claim is a measured quantity: the transverse magnetoresistance of PrSb0.3Te1.7 reaches 97% at 9 T and 2 K, defined as |[ρ(H)-ρ(0)]|/ρ(0). This is a direct four-probe resistivity observation, not the output of any fitted model or derived from a parameter that already contains the MR value. The Curie-Weiss and heat-capacity fits provide context and are not used to construct the MR. The high-temperature Hall data are used to infer a band-structure transformation around x = 0.3, but the paper explicitly acknowledges the low-temperature Hall limitation: 'owing to the inevitable mixture of the longitudinal resistivity component, it is difficult to obtain meaningful Hall effect data at low temperatures for samples with strong MR,' and it presents the band-structure link as a proposal requiring further study, not as a derivation of the MR. The paper cites several prior works by the same group for the LnSbTe background, such as Ref. [34], [39], [60], and [64], but these are contextual references for structure evolution and magnetism; the central MR observation is not justified by these citations. No equation or fitted parameter in the paper reduces to the target result by construction, and no uniqueness theorem or ansatz is imported from the authors' prior work to force the interpretation. The contact-alignment concern about Hall contamination is a measurement-validity issue, not a circularity issue, and does not change the assessment that the derivation chain is self-contained with respect to circularity.

Assumptions & free parameters 6 free parameters · 6 assumptions · 0 invented entities

The paper rests on standard experimental analysis plus a speculative mechanism. The free parameters are fitted context parameters for magnetism and heat capacity, not parameters of a model that produces the MR. The only invented entity is the mechanism hypothesis, and the paper explicitly marks it as uncertain. No new physical entity is introduced.

free parameters (6)
  • Curie-Weiss theta (out-of-plane) = +20 K (H perpendicular to ab)
    Modified Curie-Weiss fit of susceptibility above 150 K; used to infer ferromagnetic correlation along the c-axis and magnetic anisotropy.
  • Curie-Weiss theta (in-plane) = -65 K (H parallel to ab)
    Modified Curie-Weiss fit of susceptibility above 150 K; used to infer antiferromagnetic correlations within the ab-plane.
  • Effective moment mu_eff = 3.67 mu_B (H parallel to ab), 3.54 mu_B (H perpendicular to ab)
    Fitted Curie constants; values close to the free Pr3+ moment support local-moment behavior.
  • Sommerfeld coefficient gamma = 0.57 mJ/mol K^2
    Low-temperature C/T fit; indicates a small electronic contribution without a magnetic transition.
  • Debye temperature Theta_D = 233 K
    Derived from beta = 0.46 mJ/mol K^4 from the C/T fit; context only, not used for the MR claim.
  • Hall carrier density n = ~10^22 cm-3 for x = 0.3, 10^24 to 10^25 cm-3 for other compositions
    Single-band Hall formula applied to high-temperature Hall slopes; used to argue for a band-structure transformation around x = 0.3.
assumptions (6)
  • standard math Curie-Weiss law for magnetic susceptibility
    Used to extract effective moment and Weiss temperature from chi(T) above 150 K.
  • standard math Single-band Hall formula n = 1/(e R_H)
    Converts Hall coefficient to carrier density in Figure 4f; assumes one dominant carrier type.
  • standard math C/T = gamma + beta T^2 at low temperature
    Separates electronic and phonon contributions in heat capacity.
  • domain assumption Pmmn space group assignment from powder XRD Rietveld refinement
    The orthorhombic distortion is inferred from peak splitting and broadened peaks, with occupancies fixed to nominal compositions. Single-crystal XRD is done only for x = 0.91.
  • domain assumption No long-range magnetic order is inferred from susceptibility, magnetization, and heat capacity
    The absence of a magnetic transition is claimed down to 1.8 K without neutron diffraction or a microscopic probe.
  • ad hoc to paper Magnetic-field-induced band structure modification, such as gap reduction, underlies the large negative MR
    Proposed as a likely mechanism but not derived or directly measured in this work.

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Cite this review

Pith. "Pith review of Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe." pith.science (2026). https://pith.science/paper/XF3PUCNX

@misc{pith2026250204203,
  author       = {Pith},
  title        = {Pith review of: Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/XF3PUCNX}},
  note         = {Machine review of arXiv:2502.04203}
}
read the original abstract

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSbxTe2-x. We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSbxTe2-x topological materials as a promising platform for device applications.

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Reference graph

Works this paper leans on

89 extracted references · 74 canonical work pages

  1. [1]

    P. A. Grünberg, Nobel Lecture: From spin waves to giant magnetoresistance and beyond, Rev. Mod. Phys. 80, 1531 (2008)

    2008

  2. [2]

    A. P. Ramirez, Colossal magnetoresistance, J. Phys.: Condens. Matter 9, 8171 (1997)

    1997

  3. [3]

    W. H. Butler, X.-G. Zhang, D. M. C. Nicholson, and J. M. MacLaren, Spin-dependent scattering and giant magnetoresistance, Journal of Magnetism and Magnetic Materials 151, 354 (1995)

    1995

  4. [4]

    M. B. Salamon and M. Jaime, The physics of manganites: Structure and transport, Rev. Mod. Phys. 73, 583 (2001)

    2001

  5. [5]

    J. M. D. Coey, M. Viret, and S. von Molnár, Mixed-valence manganites, Advances in Physics 48, 167 (1999)

    1999

  6. [6]

    H. Y. Hwang, S.-W. Cheong, P. G. Radaelli, M. Marezio, and B. Batlogg, Lattice Effects on the Magnetoresistance in Doped LaMnO3, Phys. Rev. Lett. 75, 914 (1995)

    1995

  7. [7]

    Solovyev, N

    I. Solovyev, N. Hamada, and K. Terakura, Crucial Role of the Lattice Distortion in the Magnetism of LaMnO3, Phys. Rev. Lett. 76, 4825 (1996)

    1996

  8. [8]

    A. J. Millis, Lattice effects in magnetoresistive manganese perovskites, Nature 392, 147 (1998)

    1998

Show all 89 references
  1. [9]

    Yan and C

    B. Yan and C. Felser, Topological Materials: Weyl Semimetals, Annual Review of Condensed Matter Physics 8, 337 (2017)

    2017

  2. [10]

    N. P. Armitage, E. J. Mele, and A. Vishwanath, Weyl and Dirac semimetals in three- dimensional solids, Rev. Mod. Phys. 90, 015001 (2018)

    2018

  3. [11]

    Bernevig, H

    A. Bernevig, H. Weng, Z. Fang, and X. Dai, Recent Progress in the Study of Topological Semimetals, J. Phys. Soc. Jpn. 87, 041001 (2018)

    2018

  4. [12]

    Hu, S.-Y

    J. Hu, S.-Y. Xu, N. Ni, and Z. Mao, Transport of Topological Semimetals, Annual Review of Materials Research 49, 207 (2019)

    2019

  5. [13]

    Liang, Q

    T. Liang, Q. Gibson, M. N. Ali, M. Liu, R. J. Cava, and N. P. Ong, Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2, Nature Mater 14, 280 (2015)

    2015

  6. [14]

    Gao et al., Extremely Large Magnetoresistance in a Topological Semimetal Candidate Pyrite PtBi2, Phys

    W. Gao et al., Extremely Large Magnetoresistance in a Topological Semimetal Candidate Pyrite PtBi2, Phys. Rev. Lett. 118, 256601 (2017)

    2017

  7. [15]

    M. N. Ali et al., Large, non-saturating magnetoresistance in WTe2, Nature 514, 205 (2014)

    2014

  8. [16]

    Shekhar et al., Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP, Nature Phys 11, 645 (2015)

    C. Shekhar et al., Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP, Nature Phys 11, 645 (2015)

    2015

  9. [17]

    H. B. Nielsen and M. Ninomiya, The Adler-Bell-Jackiw anomaly and Weyl fermions in a crystal, Physics Letters B 130, 389 (1983)

    1983

  10. [18]

    D. T. Son and B. Z. Spivak, Chiral anomaly and classical negative magnetoresistance of Weyl metals, Phys. Rev. B 88, 104412 (2013)

    2013

  11. [19]

    A. A. Burkov, Chiral Anomaly and Diffusive Magnetotransport in Weyl Metals, Phys. Rev. Lett. 113, 247203 (2014)

    2014

  12. [20]

    Xiong, S

    J. Xiong, S. K. Kushwaha, T. Liang, J. W. Krizan, M. Hirschberger, W. Wang, R. J. Cava, and N. P. Ong, Evidence for the chiral anomaly in the Dirac semimetal Na3Bi, Science 350, 413 (2015)

    2015

  13. [21]

    Q. Li, D. E. Kharzeev, C. Zhang, Y. Huang, I. Pletikosić, A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D. Gu, and T. Valla, Chiral magnetic effect in ZrTe5, Nature Phys 12, 550 (2016). 21

    2016

  14. [22]

    G. Xu, H. Weng, Z. Wang, X. Dai, and Z. Fang, Chern Semimetal and the Quantized Anomalous Hall Effect in HgCr2Se4, Phys. Rev. Lett. 107, 186806 (2011)

    2011

  15. [23]

    Q. Xu, E. Liu, W. Shi, L. Muechler, J. Gayles, C. Felser, and Y. Sun, Topological surface Fermi arcs in the magnetic Weyl semimetal Co3Sn2S2, Phys. Rev. B 97, 235416 (2018)

    2018

  16. [24]

    Q. Wang, Y. Xu, R. Lou, Z. Liu, M. Li, Y. Huang, D. Shen, H. Weng, S. Wang, and H. Lei, Large intrinsic anomalous Hall effect in half-metallic ferromagnet Co3Sn2S2 with magnetic Weyl fermions, Nat Commun 9, 3681 (2018)

    2018

  17. [25]

    Morali, R

    N. Morali, R. Batabyal, P. K. Nag, E. Liu, Q. Xu, Y. Sun, B. Yan, C. Felser, N. Avraham, and H. Beidenkopf, Fermi-arc diversity on surface terminations of the magnetic Weyl semimetal Co3Sn2S2, Science 365, 1286 (2019)

    2019

  18. [26]

    Chang et al., Room-temperature magnetic topological Weyl fermion and nodal line semimetal states in half-metallic Heusler Co2TiX (X=Si, Ge, or Sn), Sci Rep 6, 38839 (2016)

    G. Chang et al., Room-temperature magnetic topological Weyl fermion and nodal line semimetal states in half-metallic Heusler Co2TiX (X=Si, Ge, or Sn), Sci Rep 6, 38839 (2016)

    2016

  19. [27]

    Z. Wang, M. G. Vergniory, S. Kushwaha, M. Hirschberger, E. V. Chulkov, A. Ernst, N. P. Ong, R. J. Cava, and B. A. Bernevig, Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys, Phys. Rev. Lett. 117, 236401 (2016)

    2016

  20. [28]

    Kübler and C

    J. Kübler and C. Felser, Weyl points in the ferromagnetic Heusler compound Co2MnAl, EPL 114, 47005 (2016)

    2016

  21. [29]

    Nakatsuji, N

    S. Nakatsuji, N. Kiyohara, and T. Higo, Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature, Nature 527, 212 (2015)

    2015

  22. [30]

    H. Yang, Y. Sun, Y. Zhang, W.-J. Shi, S. S. P. Parkin, and B. Yan, Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn, New J. Phys. 19, 015008 (2017)

    2017

  23. [31]

    Kuroda et al., Evidence for magnetic Weyl fermions in a correlated metal, Nature Mater 16, 1090 (2017)

    K. Kuroda et al., Evidence for magnetic Weyl fermions in a correlated metal, Nature Mater 16, 1090 (2017)

    2017

  24. [32]

    Ikhlas, T

    M. Ikhlas, T. Tomita, T. Koretsune, M.-T. Suzuki, D. Nishio-Hamane, R. Arita, Y. Otani, and S. Nakatsuji, Large anomalous Nernst effect at room temperature in a chiral antiferromagnet, Nature Phys 13, 1085 (2017)

    2017

  25. [33]

    A. K. Nayak et al., Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge, Science Advances 2, e1501870 (2016)

    2016

  26. [34]

    Pandey, R

    K. Pandey, R. Basnet, A. Wegner, G. Acharya, M. R. U. Nabi, J. Liu, J. Wang, Y. K. Takahashi, B. Da, and J. Hu, Electronic and magnetic properties of the topological semimetal candidate NdSbTe, Phys. Rev. B 101, 235161 (2020)

    2020

  27. [35]

    M. M. Hosen et al., Discovery of topological nodal-line fermionic phase in a magnetic material GdSbTe, Sci Rep 8, 1 (2018)

    2018

  28. [36]

    L. M. Schoop et al., Tunable Weyl and Dirac states in the nonsymmorphic compound CeSbTe, Science Advances 4, eaar2317 (2018)

    2018

  29. [37]

    K.-W. Chen, Y. Lai, Y.-C. Chiu, S. Steven, T. Besara, D. Graf, T. Siegrist, T. E. Albrecht-Schmitt, L. Balicas, and R. E. Baumbach, Possible devil’s staircase in the Kondo lattice CeSbSe, Phys. Rev. B 96, 014421 (2017)

    2017

  30. [38]

    M. Yang, Y. Qian, D. Yan, Y. Li, Y. Song, Z. Wang, C. Yi, H. L. Feng, H. Weng, and Y. Shi, Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe, Phys. Rev. Materials 4, 094203 (2020)

    2020

  31. [39]

    Pandey et al., Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe, Advanced Quantum Technologies 4, 2100063 (2021)

    K. Pandey et al., Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe, Advanced Quantum Technologies 4, 2100063 (2021). 22

    2021

  32. [40]

    Yuan et al., Observation of Dirac nodal line states in topological semimetal candidate PrSbTe, Phys

    D. Yuan et al., Observation of Dirac nodal line states in topological semimetal candidate PrSbTe, Phys. Rev. B 109, 045113 (2024)

    2024

  33. [41]

    Regmi et al., Electronic structure in a rare-earth based nodal-line semimetal candidate PrSbTe, Phys

    S. Regmi et al., Electronic structure in a rare-earth based nodal-line semimetal candidate PrSbTe, Phys. Rev. Mater. 8, L041201 (2024)

    2024

  34. [42]

    Gao et al., Magnetic and Magnetotransport Properties of the Magnetic Topological Nodal-Line Semimetal TbSbTe, Advanced Quantum Technologies 6, 2200163 (2023)

    F. Gao et al., Magnetic and Magnetotransport Properties of the Magnetic Topological Nodal-Line Semimetal TbSbTe, Advanced Quantum Technologies 6, 2200163 (2023)

    2023

  35. [43]

    Plokhikh, V

    I. Plokhikh, V. Pomjakushin, D. J. Gawryluk, O. Zaharko, and E. Pomjakushina, Competing Magnetic Phases in LnSbTe (Ln = Ho and Tb), Inorg. Chem. 61, 11399 (2022)

    2022

  36. [44]

    F. Gao, J. Huang, W. Ren, M. Li, H. Wang, T. Yang, B. Li, and Z. Zhang, Magnetic and transport properties of the topological compound DySbTe, Phys. Rev. B 105, 214434 (2022)

    2022

  37. [45]

    Plokhikh, V

    I. Plokhikh, V. Pomjakushin, D. Jakub Gawryluk, O. Zaharko, and E. Pomjakushina, On the magnetic structures of 1:1:1 stoichiometric topological phases LnSbTe (Ln = Pr, Nd, Dy and Er), Journal of Magnetism and Magnetic Materials 583, 171009 (2023)

    2023

  38. [46]

    Yue et al., Topological electronic structure in the antiferromagnet HoSbTe, Phys

    S. Yue et al., Topological electronic structure in the antiferromagnet HoSbTe, Phys. Rev. B 102, 155109 (2020)

    2020

  39. [47]

    Acharya et al., Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors, Advanced Materials 27, 2410655 (2024)

    G. Acharya et al., Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors, Advanced Materials 27, 2410655 (2024)

    2024

  40. [48]

    L. M. Schoop, M. N. Ali, C. Straßer, A. Topp, A. Varykhalov, D. Marchenko, V. Duppel, S. S. P. Parkin, B. V. Lotsch, and C. R. Ast, Dirac cone protected by non-symmorphic symmetry and three-dimensional Dirac line node in ZrSiS, Nat Commun 7, 11696 (2016)

    2016

  41. [49]

    Q. Xu, Z. Song, S. Nie, H. Weng, Z. Fang, and X. Dai, Two-dimensional oxide topological insulator with iron-pnictide superconductor LiFeAs structure, Phys. Rev. B 92, 205310 (2015)

    2015

  42. [50]

    Hu et al., Evidence of Topological Nodal-Line Fermions in ZrSiSe and ZrSiTe, Phys

    J. Hu et al., Evidence of Topological Nodal-Line Fermions in ZrSiSe and ZrSiTe, Phys. Rev. Lett. 117, 016602 (2016)

    2016

  43. [51]

    Neupane et al., Observation of topological nodal fermion semimetal phase in ZrSiS, Phys

    M. Neupane et al., Observation of topological nodal fermion semimetal phase in ZrSiS, Phys. Rev. B 93, 201104 (2016)

    2016

  44. [52]

    Acharya, K

    S. Acharya, K. Pandey, R. Basnet, G. Acharya, M. R. U. Nabi, J. Wang, and J. Hu, Single crystal growth and characterization of topological semimetal ZrSnTe, Journal of Alloys and Compounds 968, 171903 (2023)

    2023

  45. [53]

    J. Hu, Y. Zhu, X. Gui, D. Graf, Z. Tang, W. Xie, and Z. Mao, Quantum oscillation evidence for a topological semimetal phase in ZrSnTe, Phys. Rev. B 97, 155101 (2018)

    2018

  46. [54]

    M. M. Hosen et al., Observation of gapless Dirac surface states in ZrGeTe, Phys. Rev. B 97, 121103 (2018)

    2018

  47. [55]

    J. Hu, Y. L. Zhu, D. Graf, Z. J. Tang, J. Y. Liu, and Z. Q. Mao, Quantum oscillation studies of the topological semimetal candidate ZrGeM (M = S, Se, Te), Phys. Rev. B 95, 205134 (2017)

    2017

  48. [56]

    B. Lv, J. Chen, L. Qiao, J. Ma, X. Yang, M. Li, M. Wang, Q. Tao, and Z.-A. Xu, Magnetic and transport properties of low-carrier-density Kondo semimetal CeSbTe, J. Phys.: Condens. Matter 31, 355601 (2019)

    2019

  49. [57]

    Singha, T

    R. Singha, T. H. Salters, S. M. L. Teicher, S. Lei, J. F. Khoury, N. P. Ong, and L. M. Schoop, Evolving Devil’s Staircase Magnetization from Tunable Charge Density Waves in Nonsymmorphic Dirac Semimetals, Advanced Materials 33, 2103476 (2021)

    2021

  50. [58]

    Sankar, I

    R. Sankar, I. P. Muthuselvam, K. Rajagopal, K. Ramesh Babu, G. S. Murugan, K. S. Bayikadi, K. Moovendaran, C. Ting Wu, and G.-Y. Guo, Anisotropic Magnetic Properties of 23 Nonsymmorphic Semimetallic Single Crystal NdSbTe, Crystal Growth & Design 20, 6585 (2020)

    2020

  51. [59]

    Regmi, R

    S. Regmi, R. Smith, A. P. Sakhya, M. Sprague, M. I. Mondal, I. B. Elius, N. Valadez, A. Ptok, D. Kaczorowski, and M. Neupane, Observation of gapless nodal-line states in NdSbTe, Phys. Rev. Mater. 7, 044202 (2023)

    2023

  52. [60]

    Pandey, R

    K. Pandey, R. Basnet, J. Wang, B. Da, and J. Hu, Evolution of electronic and magnetic properties in the topological semimetal SmSbxTe2-x, Phys. Rev. B 105, 155139 (2022)

    2022

  53. [61]

    Regmi, G

    S. Regmi, G. Dhakal, F. C. Kabeer, N. Harrison, F. Kabir, A. P. Sakhya, K. Gofryk, D. Kaczorowski, P. M. Oppeneer, and M. Neupane, Observation of multiple nodal lines in SmSbTe, Phys. Rev. Materials 6, L031201 (2022)

    2022

  54. [62]

    Sankar et al., Crystal Growth and Magnetic Properties of Topological Nodal-Line Semimetal GdSbTe with Antiferromagnetic Spin Ordering, Inorg

    R. Sankar et al., Crystal Growth and Magnetic Properties of Topological Nodal-Line Semimetal GdSbTe with Antiferromagnetic Spin Ordering, Inorg. Chem. 58, 11730 (2019)

    2019

  55. [63]

    S. Lei, A. Saltzman, and L. M. Schoop, Complex magnetic phases enriched by charge density waves in the topological semimetals GdSbxTe2-x-, Phys. Rev. B 103, 134418 (2021)

    2021

  56. [64]

    Karki Chhetri, R

    S. Karki Chhetri, R. Basnet, J. Wang, K. Pandey, G. Acharya, M. R. U. Nabi, D. Upreti, J. Sakon, M. Mortazavi, and J. Hu, Evolution of magnetism in the magnetic topological semimetal NdSbxTe2-x+, Phys. Rev. B 109, 184429 (2024)

    2024

  57. [65]

    T. H. Salters, F. Orlandi, T. Berry, J. F. Khoury, E. Whittaker, P. Manuel, and L. M. Schoop, Charge density wave-templated spin cycloid in topological semimetal NdSbxTe2-x-, Phys. Rev. Mater. 7, 044203 (2023)

    2023

  58. [66]

    Lei et al., Band Engineering of Dirac Semimetals Using Charge Density Waves, Advanced Materials 33, 2101591 (2021)

    S. Lei et al., Band Engineering of Dirac Semimetals Using Charge Density Waves, Advanced Materials 33, 2101591 (2021)

    2021

  59. [67]

    T. H. Salters, J. Colagiuri, A. Koch Liston, J. Leeman, T. Berry, and L. M. Schoop, Synthesis and Stability Phase Diagram of Topological Semimetal Family LnSbxTe2-x-δ, Chem. Mater. 36, 11873 (2024)

    2024

  60. [68]

    S. Lei, V. Duppel, J. M. Lippmann, J. Nuss, B. V. Lotsch, and L. M. Schoop, Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSbxTe2-x-δ, Advanced Quantum Technologies 2, 1900045 (2019)

    2019

  61. [69]

    Li et al., Charge density wave and weak Kondo effect in a Dirac semimetal CeSbTe, Sci

    P. Li et al., Charge density wave and weak Kondo effect in a Dirac semimetal CeSbTe, Sci. China Phys. Mech. Astron. 64, 237412 (2021)

    2021

  62. [70]

    Singha et al., Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal, Science Advances 9, eadh0145 (2023)

    R. Singha et al., Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal, Science Advances 9, eadh0145 (2023)

    2023

  63. [71]

    Hikami, A

    S. Hikami, A. I. Larkin, and Y. Nagaoka, Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System, Progress of Theoretical Physics 63, 707 (1980)

    1980

  64. [72]

    Bergmann, Weak localization in thin films: a time-of-flight experiment with conduction electrons, Physics Reports 107, 1 (1984)

    G. Bergmann, Weak localization in thin films: a time-of-flight experiment with conduction electrons, Physics Reports 107, 1 (1984)

    1984

  65. [73]

    J. J. Lin and J. P. Bird, Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures, J. Phys.: Condens. Matter 14, R501 (2002)

    2002

  66. [74]

    Hu et al., Enhanced electron coherence in atomically thin Nb3SiTe6, Nature Phys 11, 471 (2015)

    J. Hu et al., Enhanced electron coherence in atomically thin Nb3SiTe6, Nature Phys 11, 471 (2015)

    2015

  67. [75]

    Wang et al., Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal, Advanced Materials 33, 2005755 (2021)

    Z.-C. Wang et al., Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal, Advanced Materials 33, 2005755 (2021)

    2021

  68. [76]

    Yi et al., Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnSb2, Phys

    C. Yi et al., Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnSb2, Phys. Rev. B 96, 205103 (2017). 24

    2017

  69. [77]

    Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, and X. H. Chen, Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2, Npj Quantum Mater. 6, 94 (2021)

    2021

  70. [78]

    J. Yin, C. Wu, L. Li, J. Yu, H. Sun, B. Shen, B. A. Frandsen, D.-X. Yao, and M. Wang, Large negative magnetoresistance in the antiferromagnetic rare-earth dichalcogenide EuTe2, Phys. Rev. Materials 4, 013405 (2020)

    2020

  71. [79]

    Yang et al., Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2, Phys

    H. Yang et al., Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2, Phys. Rev. B 104, 214419 (2021)

    2021

  72. [80]

    Y. Ni, H. Zhao, Y. Zhang, B. Hu, I. Kimchi, and G. Cao, Colossal magnetoresistance via avoiding fully polarized magnetization in the ferrimagnetic insulator Mn3Si2Te6, Phys. Rev. B 103, L161105 (2021)

    2021

  73. [81]

    Seo et al., Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors, Nature 599, 576 (2021)

    J. Seo et al., Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors, Nature 599, 576 (2021)

    2021

  74. [82]

    Basnet and J

    R. Basnet and J. Hu, Understanding and Tuning Magnetism in van der Waals-type Metal Thiophosphates, Nanoscale (2024)

    2024

  75. [83]

    Pandey, L

    K. Pandey, L. Sayler, R. Basnet, J. Sakon, F. Wang, and J. Hu, Crystal Growth and Electronic Properties of LaSbSe, Crystals 12, 11 (2022)

    2022

  76. [84]

    Singha, A

    R. Singha, A. Pariari, B. Satpati, and P. Mandal, Magnetotransport properties and evidence of a topological insulating state in LaSbTe, Phys. Rev. B 96, 245138 (2017)

    2017

  77. [85]

    J. M. D. Teresa, M. R. Ibarra, P. A. Algarabel, C. Ritter, C. Marquina, J. Blasco, J. García, A. del Moral, and Z. Arnold, Evidence for magnetic polarons in the magnetoresistive perovskites, Nature 386, 256 (1997)

    1997

  78. [86]

    KASUYA and A

    T. KASUYA and A. YANASE, Anomalous Transport Phenomena in Eu-Chalcogenide Alloys, Rev. Mod. Phys. 40, 684 (1968)

    1968

  79. [87]

    Pohlit, S

    M. Pohlit, S. Rößler, Y. Ohno, H. Ohno, S. von Molnár, Z. Fisk, J. Müller, and S. Wirth, Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB6, Phys. Rev. Lett. 120, 257201 (2018)

    2018

  80. [88]

    X. Jin, S. Chen, and T. Li, Coexistence of two types of short-range order in Si–Ge–Sn medium-entropy alloys, Commun Mater 3, 66 (2022)

    2022

  81. [89]

    X. Jin, S. Chen, C. Lemkan, and T. Li, Role of local atomic short-range order distribution in alloys: Why it matters in Si-Ge-Sn alloys, Phys. Rev. Mater. 7, L111601 (2023)

    2023

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