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Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

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arxiv 2006.01443 v1 pith:XMF4I6OM submitted 2020-06-02 cond-mat.mtrl-sci

Taiki Nishijima , Yakun Liu , Dushyant Kumar , Kyusup Lee , Fabien Rortais , Syuta Honda , Yuichiro Ando , Ei Shigematsu
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Ryo Ohshima Hyunsoo Yang Masashi Shiraishi
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classification cond-mat.mtrl-sci
keywords spinhallaccumulationbi-dopedbismuthchanneldopedeffect
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Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.

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