A two-channel model for Spin-relaxation noise

Bart J. van Wees; Ivan J. Vera-Marun; Siddhartha Omar

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A two-channel model for Spin-relaxation noise

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arxiv 1712.01414 v1 pith:YA6AP6TW submitted 2017-12-04 cond-mat.mes-hall

Siddhartha Omar , Bart J. van Wees , Ivan J. Vera-Marun This is my paper

classification cond-mat.mes-hall

keywords modelnoisespinspin-relaxationtwo-channelapplicabilitycalculatecase

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We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.

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