Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate

Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.