Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Aichi Yamashita; Hiromi Tanaka; Hiroshi Hara; Hiroyuki Takeya; Kazuki Nakamura; Noriyuki Kataoka; Ryo Matsumoto; Sayaka Yamamoto; Shintaro Adachi; Tetsuo Irifune

arxiv: 1807.08843 · v1 · pith:YUAUUCCQnew · submitted 2018-07-23 · ❄️ cond-mat.supr-con

Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Ryo Matsumoto , Hiroshi Hara , Hiromi Tanaka , Kazuki Nakamura , Noriyuki Kataoka , Sayaka Yamamoto , Aichi Yamashita , Shintaro Adachi

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Tetsuo Irifune Hiroyuki Takeya Yoshihiko Takano

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classification ❄️ cond-mat.supr-con

keywords diamondanvilcrystalpressuresinglesnsesulfur-dopedboron-doped

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Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

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Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

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