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arxiv: 2603.16677 · v2 · pith:ZZ4VKUBWnew · submitted 2026-03-17 · ❄️ cond-mat.mes-hall

Correlated Quantum Phenomena in Confined Two-Dimensional Hexagonal Crystals

Pith reviewed 2026-05-15 09:46 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords graphenetransition metal dichalcogenidesquantum confinementquantum dotsmoiré superlatticescorrelated quantum statesDirac fermionsexcitonic spectra
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The pith

Quantum confinement in graphene and TMD quantum dots discretizes spectra and amplifies Coulomb interactions to stabilize correlated states.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines how imposing spatial confinement on two-dimensional materials with hexagonal lattices affects their quantum behavior. In graphene and transition metal dichalcogenides, this confinement converts the continuous energy bands of Dirac fermions into discrete levels. The reduced space intensifies the Coulomb forces between particles, making correlated effects like excitonic binding more prominent. Twisted heterostructures add moiré-induced confinement that further introduces topological properties. These mechanisms collectively point to confinement as a key tool for engineering novel quantum phases in low-dimensional systems.

Core claim

Externally imposed confinement in graphene- and TMD-based quantum dots leads to discrete electronic and excitonic spectra, where interaction effects are strongly amplified. In twisted van der Waals heterostructures, the moiré superlattices generate emergent confinement and induce nontrivial band topology, giving rise to a wealth of novel phenomena. More generally, reduced dimensionality and spatial localization in two-dimensional materials promote a diverse range of correlated states.

What carries the argument

Quantum confinement of Dirac fermions, which imposes spatial boundaries to discretize energy levels and enhance interaction strengths.

If this is right

  • Discrete levels allow precise tuning of electronic and optical properties in quantum dots.
  • Amplified interactions enable stabilization of correlated states such as Wigner crystals or excitonic insulators.
  • Moiré confinement creates topological bands supporting fractional Chern insulators or other exotic phases.
  • Confinement provides a route to enhance quantum coherence for potential device applications.
  • Overall, it reveals how dimensionality reduction controls quantum correlations in 2D materials.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Fabricating cleaner devices could reveal even stronger correlation effects than currently observed.
  • The approach might extend to other confined geometries like nanoribbons or nanopores in 2D materials.
  • Theoretical models could be tested by varying confinement size to map the transition from weak to strong interaction regimes.
  • Connections to quantum information processing arise if these states can host protected qubits.

Load-bearing premise

The assumption that confinement effects dominate over disorder, substrate interactions, and other environmental perturbations in real devices.

What would settle it

Measuring continuous rather than discrete energy spectra in confined graphene or TMD structures under conditions where interactions should be strong would indicate that confinement does not sufficiently amplify correlations.

Figures

Figures reproduced from arXiv: 2603.16677 by Tapash Chakraborty, Wenchen Luoa, Xiang Liua, Zheng Taoa.

Figure 1
Figure 1. Figure 1: Crystal lattice structures of representative 2D materials including graphene, hBN, MoS2, other transition metal dichalcogenides, and layered ox￾ides. ranges from 70 to 300 meV, while the conduction band splitting is on the order of 1-20 meV[20, 21]. These splittings determine the energetic ordering between bright and dark excitonic states and strongly influence optical emission efficiency[31, 32]. In addit… view at source ↗
Figure 2
Figure 2. Figure 2: Electronic band structures of MoS2 and WS2 along the high￾symmetry path ΓMKΓ. (a) Monolayer MoS2 without spin-orbit coupling. (b) Bilayer MoS2 without spin-orbit coupling. (c) Monolayer MoS2 with spin-orbit coupling. (d) Monolayer WS2 with spin-orbit coupling. The band structures are obtained from tight-binding model calculations, with spin-orbit coupling included in panels (c) and (d) to capture the effec… view at source ↗
Figure 3
Figure 3. Figure 3: Schematic of graphene and TMDs drawing of the band structure at the band edges located at the K and K ′ points. Adapted from Ref. [6, 20] In three-dimensional Weyl semimetals (WSMs), conduction and valence bands touch at discrete Weyl nodes in the bulk BZ. Each node acts as a monopole of Berry curvature, endowing the electronic structure with a nontrivial Chern number on specific momentum-space planes [13,… view at source ↗
Figure 4
Figure 4. Figure 4: Schematic of different QDs structure. (a) A circular QD de￾fined in monolayer graphene by a radial confinement potential of radius R. (b)Monolayer MoS2 circular QD of radius R (indicated by the red circle) and a perpendicular magnetic field B is applied to the MoS2 plane. Adapted from Ref. [79, 80] QDs based on monolayer, bilayer, trilayer, and even multi￾layer 2D materials have attracted substantial resea… view at source ↗
Figure 6
Figure 6. Figure 6: The low-lying energy spectra of a single electron and a single hole in TMD QDs with radius R = 20 nm vary with perpendicular magnetic fields. For simplicity, only the first five levels of a principal quantum number are displayed. The energy spectra are provided for different TMDs with different spins: (a) MoS2, the conduction band with spin s = 1; (b) MoS2, conduction band with s = −1; (c) WS2 conduction b… view at source ↗
Figure 7
Figure 7. Figure 7: The schematic double layer system and bands structure of TMDs near Fermi surface. (a) Electron confined in a TMD layer, hole in another TMD layer. (b) The lower bands in valence band are neglected since they are far away from the Fermi surface. Only one valley, say valley K, is considered. The right panel indicates the bands shift by Zeeman coupling in a magnetic field. Electrons and holes are marked in di… view at source ↗
Figure 9
Figure 9. Figure 9: Ground state pseudo-spin fields (σ α x , σα y ) of interlayer excitons with electron and hole spin-up at magnetic field B = 1 T. (a) and (c) The pseu￾dospin textures of the electron and the hole in interlayer exciton in MoS2/MoS2 double-layer QDs with radii Re = Rh = 20nm, respectively. The distance between the two layers is 5nm. (b) and (d) The pseudospin textures of the elec￾tron and the hole in interlay… view at source ↗
Figure 10
Figure 10. Figure 10: a,b, Classical trajectories inside a circular (a) and stadium-shaped (b) billiard. (c) A stadium-shaped graphene QDs defined by a p-n junction. Adapted from Ref. [124]. the strength of the cavity-induced interband transition. Inter￾layer excitons in van der Waals heterostructures, when localized in QDs, exhibit extended lifetimes and emission energies tun￾able by vertical electric fields. Some studies hav… view at source ↗
Figure 11
Figure 11. Figure 11: Schematic diagram of the hybrid system consisting of two QDs coupled through a Majorana nanowire. The Majorana bound states ηL and ηR appear at the ends of the nanowire with an overlap energy εM. The QDs are tunnel-coupled to the Majorana modes with amplitudes t1, t2, t ′ 1 , t ′ 2 . The left dot is connected to a superconducting lead, while the right dot is coupled to a normal lead. Adapted from Ref. [13… view at source ↗
Figure 12
Figure 12. Figure 12: (a) Single-layer BZs of graphene or TMDs (blue and red curves), together with the moiré BZ at twist angle θ. Here, K and K ′ denote the K and K ′ points of the moiré Brillouin zone. (b) The moiré pattern induces a periodic modulation of the electrostatic potential, leading to an array of moiré potential minima. Blue and green dots represent electrons and holes, respectively, which can be trapped in the mo… view at source ↗
Figure 13
Figure 13. Figure 13: (a) Real-space image of TBG with a twist angle of θ = 9.43◦ ; the red rhombus denotes a superlattice region. (b,c) Band structures of TBG for rotation angles of 2.65◦ and 1.35◦ , respectively. (d)–(f) Energy contour maps of the highest valence band in the moiré Brillouin zones of TBG for three different twist angles. From left to right, the twist angles are 1.25◦ , 6.01◦ , and 2.13◦ . Dark (bright) colors… view at source ↗
Figure 14
Figure 14. Figure 14: Compressibility maps near filling factor ν = 1/3 as a function of displacement field D at low magnetic field. (a)(e) In-phase component of the impedance bridge signal proportional to the quantum capacitance Cp, reflecting the electronic compressibility. The weak vertical feature indicates the FCI states when the magnetic field exceeds 0.2 T. (f)(j) Quadrature component showing the dissipative loss associa… view at source ↗
Figure 15
Figure 15. Figure 15: (a) Dual-gated electronhole bilayer device enabling independent control of electrons and holes that form interlayer excitons. (b) Interlayer ex￾citons in type-II band-aligned TMD heterostructures, with electrons and holes residing in different layers. (c) Band alignments of different stacked TMDs het￾erostructures at high-symmetry points of the Brillouin zone. Strong Coulomb interactions also stabilize ex… view at source ↗
Figure 16
Figure 16. Figure 16: Oppositely polarized ferroelectric domains in rhombohedral (R￾phase) homobilayer TMDs. The two inversion-related stacking configurations (MX and XM) generate opposite out-of-plane polarization. excitonic fine structure and valley-polarized selection rules in TMD QDs underpins valleytronic logic gates and ultrasensitive photodetectors[222]. Large-area 2D crystals further extend in￾tegrated electronics beyo… view at source ↗
Figure 17
Figure 17. Figure 17: Overview of technologies and applications enabled by two￾dimensional (2D) materials. Representative materials including graphene, tran￾sition metal dichalcogenides (TMDs), MXenes, and phosphorene provide ver￾satile platforms for emerging device technologies. Their unique electronic, optical, and interfacial properties enable diverse functionalities across multi￾ple domains, including quantum technologies,… view at source ↗
read the original abstract

Low-energy fermionic excitations in two-dimensional materials deviate from the conventional Schr\"odinger description and are instead governed by Dirac equations. Such Dirac fermions give rise to a variety of unconventional quantum phenomena that have no direct analogues in traditional condensed matter systems. Among these materials, graphene and transition metal dichalcogenides (TMDs) represent two prototypical platforms, hosting massless and massive Dirac particles, respectively, and exhibiting rich electronic, optical, and valley dependent properties. Here we review the effect of the quantum confinement in these two-dimensional hexagonal materials that provides a powerful route to enhance Coulomb interactions and stabilizing correlated quantum states. In graphene- and TMD-based quantum dots, externally imposed confinement leads to discrete electronic and excitonic spectra, where interaction effects are strongly amplified. In twisted van der Waals heterostructures, the moir\'e superlattices generate emergent confinement and induce nontrivial band topology, giving rise to a wealth of novel phenomena. More generally, reduced dimensionality and spatial localization in two-dimensional materials promote a diverse range of correlated states. Recent experimental and theoretical advances highlight the central role of confinement in shaping quantum behavior and reveal new opportunities for applications based on these states. In this review, we provide an overview of recent progress in confinement-induced correlated phenomena in two-dimensional materials from both theoretical and experimental perspectives.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

0 major / 3 minor

Summary. This manuscript is a review article summarizing confinement-induced correlated quantum phenomena in two-dimensional hexagonal crystals, focusing on graphene (massless Dirac fermions) and transition metal dichalcogenides (massive Dirac fermions). It describes how external confinement in quantum dots produces discrete electronic and excitonic spectra with amplified Coulomb interactions, and how moiré superlattices in twisted van der Waals heterostructures generate emergent confinement, nontrivial band topology, and correlated states. The review covers both theoretical and experimental advances, emphasizing reduced dimensionality and spatial localization as routes to stabilize correlated states.

Significance. If the synthesis of the literature is accurate and comprehensive, the review would provide a useful consolidation of established results on confinement effects, highlighting opportunities for applications in quantum devices. It draws on existing experimental and theoretical work without introducing new derivations or data, so its value lies in organizing the field rather than advancing novel claims.

minor comments (3)
  1. The abstract states that confinement 'provides a powerful route to enhance Coulomb interactions and stabilizing correlated quantum states,' but the manuscript should clarify whether this enhancement is quantified relative to unconfined cases or remains qualitative across the cited works.
  2. Section on twisted van der Waals heterostructures references moiré-induced confinement but would benefit from explicit comparison of length scales (moiré period vs. quantum dot size) to distinguish emergent vs. externally imposed confinement.
  3. The review cites 'recent experimental and theoretical advances' without a dedicated table or timeline of key milestones; adding such a summary would improve accessibility for readers new to the subfield.

Simulated Author's Rebuttal

0 responses · 0 unresolved

We thank the referee for their careful reading and positive summary of our review on confinement-induced correlated quantum phenomena in two-dimensional hexagonal crystals. The referee accurately captures the scope, covering graphene and TMDs, quantum dots, moiré superlattices, and the role of reduced dimensionality. No specific major comments were provided in the report, so we have no points requiring detailed response or revision at this time. We are pleased with the recommendation for minor revision and remain available for any additional feedback from the editor.

Circularity Check

0 steps flagged

No significant circularity detected

full rationale

This is a review article that summarizes established literature on confinement-induced phenomena in graphene and TMD quantum dots without presenting any new derivations, equations, parameter fits, or predictions. All claims reference external theoretical and experimental advances; no self-definitional steps, fitted inputs renamed as predictions, or load-bearing self-citations appear in the argument structure. The central narrative remains self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

No free parameters, axioms, or invented entities are introduced because the document is a review of prior work.

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Works this paper leans on

226 extracted references · 226 canonical work pages

  1. [1]

    Tkachov, Topological Quantum Materials: Con- cepts, Models, and Phenomena, Jenny Stanford Pub- lishing, 2022

    G. Tkachov, Topological Quantum Materials: Con- cepts, Models, and Phenomena, Jenny Stanford Pub- lishing, 2022. doi:https://doi.org/10.1201/ 9781003266419

  2. [2]

    Chakraborty, F

    T. Chakraborty, F. Peeters, U. Sivan, Nano-Physics and Bio-Electronics: A New Odyssey, Elsevier, 2002. 15 Nanoelectronics Flexible Transistors Valleytronic Photodetectors Large-area Electronics Quantum Technologies Quantum-dot Qubits Single-photon Emitters Topological Devices Neuromorphic Computing Ferroelectric Memory Synaptic Devices Ion Migration Therm...

  3. [3]

    von Klitzing, T

    K. von Klitzing, T. Chakraborty, P . Kim, V . Madhavan, X. Dai, J. McIver, Y . Tokura, L. Savary, D. Smirnova, A. M. Rey, et al., 40 years of the quantum Hall e ffect, Nat. Rev. Phys. 2 (8) (2020) 397–401. doi:https:// doi.org/10.1038/s42254-020-0209-1

  4. [4]

    Chakraborty (Ed.), Encyclopedia of condensed matter physics (2nd Edition), Academic Press, Oxford, 2024

    T. Chakraborty (Ed.), Encyclopedia of condensed matter physics (2nd Edition), Academic Press, Oxford, 2024

  5. [5]

    C. S. Gruber, M. Abdel-Hafiez, Interplay of electronic orders in topological quantum materials, ACS Mater. Au 5 (1) (2024) 72–87. doi:https://doi.org/10. 1021/acsmaterialsau.4c00114

  6. [6]

    Abergel, V

    D. Abergel, V . Apalkov, J. Berashevich, K. Ziegler, T. Chakraborty, Properties of graphene: a theoret- ical perspective, Adv. Phys. 59 (4) (2010) 261–

  7. [7]

    D’Alessio, Y

    doi:https://doi.org/10.1080/00018732. 2010.487978

  8. [8]

    Phys.6377 ISSN 1460-6976 URLhttp://dx.doi.org/10

    T. Wehling, A. Black-Scha ffer, A. Balatsky, Dirac ma- terials, Adv. Phys. 63 (1) (2014) 1–76. doi:https: //doi.org/10.1080/00018732.2014.927109

  9. [9]

    M. Xu, T. Liang, M. Shi, H. Chen, Graphene- Like Two-Dimensional Materials, Chem. Rev. 113 (5) (2013) 3766–3798. doi:https://doi.org/10.1021/ cr300263a

  10. [10]

    A. K. Geim, I. V . Grigorieva, V an der Waals heterostruc- tures, Nature 499 (7459) (2013) 419–425. doi:https: //doi.org/10.1038/nature12385

  11. [11]

    Jung, C.-J

    J.-H. Jung, C.-J. Kim, Hexagonal boron nitride: in- terlayer with atomic scale precision for interface en- gineering in functional materials and devices, npj 2D Mater. Appl. (2026). doi:https://doi.org/10. 1038/s41699-026-00664-7

  12. [12]

    Cording, J

    L. Cording, J. Liu, J. Y . Tan, K. Watanabe, T. Taniguchi, A. Avsar, B. Özyilmaz, Highly anisotropic spin trans- port in ultrathin black phosphorus, Nat. Mater. 23 (4) (2024) 479–485. doi:https://doi.org/10.1038/ s41563-023-01779-8

  13. [13]

    Z. Li, H. Cao, S. Meng, Light-induced above-room- temperature Chern insulators in group-IV Xenes, npj Comput. Mater. 11 (1) (2025) 160. doi:https://doi. org/10.1038/s41524-025-01662-x

  14. [14]

    Lu, S.-Q

    H.-Z. Lu, S.-Q. Shen, Quantum transport in topological semimetals under magnetic fields, Front. Phys. 12 (3) (2017) 127201. doi:https://doi.org/10.1007/ s11467-019-0890-7

  15. [15]

    G. D. Battista, K. C. Fong, A. Díez-Carlón, K. Watan- abe, T. Taniguchi, D. K. Efetov, Infrared single-photon detection with superconducting magic-angle twisted bi- layer graphene, Sci. Adv. 10 (38) (2024) eadp3725. doi: https://doi.org/10.1126/sciadv.adp3725

  16. [16]

    J. Yi, Q. Shuai, G. Wu, H. Wu, C. Zhu, X. Sun, Q. Zong, Y . Liao, X. Zhu, X. Fan, Z. Zhang, Y . Zhou, X. Wang, D. Li, A. Pan, Capacitive Amplification toward Boltzmann-Limit Switching in WSe 2 Reconfigurable Field-Effect Transistors, Adv. Funct. Mater. n /a (n /a) (2025) e24990. doi:https://doi.org/10.1002/ adfm.202524990

  17. [17]

    Zheng, Y

    S. Zheng, Y . Sun, Y . Shen, S. Du, H. Chen, Y . Jing, Y . Y uan, F. Y ao, H. Li, X. Liu, Y . Cheng, J. Sun, Anomalous Reconfigurable-Transport in MoS 2 Transis- tors by Electrically-Switchable van der Waals Interfa- cial Dipole, Adv. Mater. 37 (45) (2025) e02784. doi: https://doi.org/10.1002/adma.202502784

  18. [18]

    W. Ren, P . Boggild, J. M. Redwing, K. S. Novoselov, L. Sun, Y . Qi, K. Jia, Z. Liu, O. Burton, J. A. Alexander- Webber, S. Hofmann, Y . Cao, Y . Long, Q.-H. Y ang, D. Li, S. H. Choi, K. K. Kim, Y . H. Lee, M. Li, Q. Huang, Y . Gogotsi, N. Clark, A. Carl, R. Gorbachev, T. Olsen, J. Rosen, K. S. Thygesen, P . D. D. K. Efetov, B. S. Jessen, M. Y ankowitz, J...

  19. [19]

    Amorim, A

    B. Amorim, A. Cortijo, F. de Juan, A. Grushin, F. Guinea, A. Gutiérrez-Rubio, H. Ochoa, V . Parente, R. Roldán, P . San-Jose, J. Schiefele, M. Sturla, M. V oz- mediano, Novel e ffects of strains in graphene and other 16 two dimensional materials, Phys. Rep. 617 (2016) 1–

  20. [20]

    Bertone, D

    doi:https://doi.org/10.1016/j.physrep. 2015.12.006

  21. [21]

    Rozhkov, A

    A. Rozhkov, A. Sboychakov, A. Rakhmanov, F. Nori, Electronic properties of graphene-based bilayer systems, Phys. Rep. 648 (2016) 1–104, electronic properties of graphene-based bilayer systems. doi:https://doi. org/10.1016/j.physrep.2016.07.003

  22. [22]

    Xiao, G.-B

    D. Xiao, G.-B. Liu, W. Feng, X. Xu, W. Y ao, Coupled Spin and V alley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides, Phys. Rev. Lett. 108 (2012) 196802. doi:https://doi.org/10.1103/ PhysRevLett.108.196802

  23. [23]

    Kormányos, G

    A. Kormányos, G. Burkard, M. Gmitra, J. Fabian, V . Zó- lyomi, N. D. Drummond, V . Falko, k˚ up theory for two- dimensional transition metal dichalcogenide semicon- ductors, 2D Mater. 2 (2) (2015) 022001. doi:https: //doi.org/10.1088/2053-1583/2/2/022001

  24. [24]

    A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, A. K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81 (2009) 109–162. doi: https://doi.org/10.1103/RevModPhys.81.109

  25. [25]

    Xiao, M.-C

    D. Xiao, M.-C. Chang, Q. Niu, Berry phase ef- fects on electronic properties, Rev. Mod. Phys. 82 (2010) 1959–2007. doi:https://doi.org/10.1103/ RevModPhys.82.1959

  26. [26]

    A. B. Kuzmenko, E. van Heumen, F. Carbone, D. van der Marel, Universal Optical Conductance of Graphite, Phys. Rev. Lett. 100 (2008) 117401. doi:https:// doi.org/10.1103/PhysRevLett.100.117401

  27. [27]

    Iwakiri, J

    S. Iwakiri, J. Miller, F. Lang, J. Prettenthaler, T. Taniguchi, K. Watanabe, S. S. Lee, P . Becker, D. Gün- ther, T. Ihn, K. Ensslin, High-mobility transport in isotopically enriched 12C and 13C exfoliated graphene, Phys. Rev. Res. 5 (2023) 043212. doi:https://doi. org/10.1103/PhysRevResearch.5.043212

  28. [28]

    J. Zhao, P . Ji, Y . Li, R. Li, K. Zhang, H. Tian, K. Y u, B. Bian, L. Hao, X. Xiao, et al., Ultrahigh-mobility semi- conducting epitaxial graphene on silicon carbide, Nature 625 (7993) (2024) 60–65. doi:https://doi.org/10. 1038/s41586-023-06811-0

  29. [29]

    G.-B. Liu, D. Xiao, Y . Y ao, X. Xu, W. Y ao, Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides, Chem. Soc. Rev. 44 (2015) 2643–2663. doi:https://doi.org/ 10.1039/C4CS00301B

  30. [30]

    K. F. Mak, D. Xiao, J. Shan, Light–valley interac- tions in 2D semiconductors, Nat. Photonics 12 (8) (2018) 451–460. doi:https://doi.org/10.1038/ s41566-018-0204-6

  31. [31]

    Kormányos, V

    A. Kormányos, V . Zólyomi, N. D. Drummond, P . Rakyta, G. Burkard, V . I. Fal’ko, Monolayer MoS 2: Trigonal warping, the Γ valley, and spin-orbit coupling e ffects, Phys. Rev. B 88 (2013) 045416. doi:https://doi. org/10.1103/PhysRevB.88.045416

  32. [32]

    S. S. R. Bladwell, V alley separation via trigonal warping, Phys. Rev. B 101 (2020) 045404. doi:https://doi. org/10.1103/PhysRevB.101.045404

  33. [33]

    Malic, M

    E. Malic, M. Selig, M. Feierabend, S. Brem, D. Chris- tiansen, F. Wendler, A. Knorr, G. Berghäuser, Dark ex- citons in transition metal dichalcogenides, Phys. Rev. Mater. 2 (2018) 014002. doi:https://doi.org/10. 1103/PhysRevMaterials.2.014002

  34. [34]

    X. Xu, W. Y ao, D. Xiao, T. F. Heinz, Spin and pseu- dospins in layered transition metal dichalcogenides, Nat. Phys. 10 (5) (2014) 343–350. doi:https://doi.org/ 10.1038/nphys2942

  35. [35]

    M. Wu, J. Li, Sliding ferroelectricity in 2D van der Waals materials: Related physics and future op- portunities, Proc. Natl. Acad. Sci. U.S.A. 118 (50) (2021) e2115703118. doi:https://doi.org/10. 1073/pnas.2115703118

  36. [36]

    X. Ding, F. Peng, J. Zhou, W. Gong, G. Slaven, K. P . Loh, C. T. Lim, D. T. Leong, Defect engineered bioactive transition metals dichalcogenides quantum dots, Nat. Commun. 10 (1) (2019) 41. doi:https://doi.org/ 10.1038/s41467-018-07835-1

  37. [37]

    R. Liu, D. Wu, X. Feng, K. Müllen, Bottom-Up Fab- rication of Photoluminescent Graphene Quantum Dots with Uniform Morphology, J. Am. Chem. Soc. 133 (39) (2011) 15221–15223. doi:https://doi.org/10. 1021/ja204953k

  38. [38]

    James Singh, T

    K. James Singh, T. Ahmed, P . Gautam, A. S. Sadhu, D.- H. Lien, S.-C. Chen, Y .-L. Chueh, H.-C. Kuo, Recent Advances in Two-Dimensional Quantum Dots and Their Applications, Nanomaterials 11 (6) (2021). doi:https: //doi.org/10.3390/nano11061549

  39. [39]

    Chakraborty, Quantum Dots, North-Holland, Amster- dam, 1999

    T. Chakraborty, Quantum Dots, North-Holland, Amster- dam, 1999

  40. [42]

    G. Kim, B. Huet, C. E. Stevens, K. Jo, J.-Y . Tsai, S. Bachu, M. Leger, S. Song, M. Rahaman, K. Y . Ma, et al., Confinement of excited states in two- dimensional, in-plane, quantum heterostructures, Nat. Commun. 15 (1) (2024) 6361. doi:https://doi. org/10.1038/s41467-024-50653-x

  41. [43]

    Kormányos, V

    A. Kormányos, V . Zólyomi, N. D. Drummond, G. Burkard, Spin-Orbit Coupling, Quantum Dots, and Qubits in Monolayer Transition Metal Dichalcogenides, Phys. Rev. X 4 (2014) 011034. doi:https://doi. org/10.1103/PhysRevX.4.011034

  42. [44]

    Altınta¸ s, M

    A. Altınta¸ s, M. Bieniek, A. Dusko, M. Korkusi ´nski, J. Pawłowski, P . Hawrylak, Spin-valley qubits in gated quantum dots in a single layer of tran- sition metal dichalcogenides, Phys. Rev. B 104 (2021) 195412. doi:https://doi.org/10.1103/ PhysRevB.104.195412

  43. [45]

    Brooks, G

    M. Brooks, G. Burkard, Electric dipole spin resonance of two-dimensional semiconductor spin qubits, Phys. Rev. B 101 (2020) 035204. doi:https://doi.org/10. 1103/PhysRevB.101.035204

  44. [46]

    D. S. L. Abergel, P . Pietiläinen, T. Chakraborty, Elec- tronic compressibility of graphene: The case of vanish- ing electron correlations and the role of chirality, Phys. Rev. B 80 (2009) 081408. doi:https://doi.org/10. 1103/PhysRevB.80.081408

  45. [47]

    D. S. L. Abergel, T. Chakraborty, Long-Range Coulomb Interaction in Bilayer Graphene, Phys. Rev. Lett. 102 (2009) 056807. doi:https://doi.org/10.1103/ PhysRevLett.102.056807

  46. [48]

    Berashevich, T

    J. Berashevich, T. Chakraborty, Interlayer repulsion and decoupling e ffects in stacked turbostratic graphene flakes, Phys. Rev. B 84 (2011) 033403. doi:https: //doi.org/10.1103/PhysRevB.84.033403

  47. [49]

    Berashevich, T

    J. Berashevich, T. Chakraborty, On the nature of in- terlayer interactions in a system of two graphene frag- ments, J. Phys. Chem. C 115 (50) (2011) 24666–24673. doi:https://doi.org/10.1021/jp2095032

  48. [50]

    Chakraborty, V

    T. Chakraborty, V . M. Apalkov, Traits and characteristics of interacting dirac fermions in monolayer and bilayer graphene, Solid State Commun. 175-176 (2013) 123–

  49. [51]

    doi:https://doi.org/10.1016/j.ssc.2013. 04.002

  50. [53]

    V . M. Apalkov, T. Chakraborty, Electrically tunable charge and spin transitions in Landau levels of interact- ing Dirac fermions in trilayer graphene, Phys. Rev. B 86 (2012) 035401. doi:https://doi.org/10.1103/ PhysRevB.86.035401

  51. [54]

    E. C. Regan, D. Wang, C. Jin, M. I. Bakti Utama, B. Gao, X. Wei, S. Zhao, W. Zhao, Z. Zhang, K. Y u- migeta, et al., Mott and generalized Wigner crystal states in WSe2 /WS2 moiré superlattices, Nature 579 (7799) (2020) 359–363. doi:https://doi.org/10.1038/ s41586-020-2092-4

  52. [55]

    E. Y . Andrei, D. K. Efetov, P . Jarillo-Herrero, A. H. Mac- Donald, K. F. Mak, T. Senthil, E. Tutuc, A. Y azdani, A. F. Y oung, The marvels of moiré materials, Nat. Rev. Mater. 6 (3) (2021) 201–206. doi:https://doi.org/ 10.1038/s41578-021-00284-1

  53. [56]

    Ghiotto, E.-M

    A. Ghiotto, E.-M. Shih, G. S. Pereira, D. A. Rhodes, B. Kim, J. Zang, A. J. Millis, K. Watanabe, T. Taniguchi, J. C. Hone, et al., Quantum criticality in twisted transition metal dichalcogenides, Nature 597 (7876) (2021) 345–349. doi:ttps://doi.org/10.1038/ s41586-021-03815-6

  54. [57]

    Sheng, M

    S. Sheng, M. Abdo, S. Rolf-Pissarczyk, K. Lichtenberg, S. Baumann, J. A. Burgess, L. Malavolti, S. Loth, Ter- ahertz spectroscopy of collective charge density wave dynamics at the atomic scale, Nat. Phys. 20 (10) (2024) 1603–1608. doi:https://doi.org/10.1038/ s41567-024-02552-7

  55. [58]

    Carmier, D

    P . Carmier, D. Ullmo, Berry phase in graphene: Semiclassical perspective, Phys. Rev. B 77 (2008) 245413. doi:https://link.aps.org/doi/10. 1103/PhysRevB.77.245413

  56. [59]

    Battilomo, N

    R. Battilomo, N. Scopigno, C. Ortix, Berry Cur- vature Dipole in Strained Graphene: A Fermi Sur- face Warping E ffect, Phys. Rev. Lett. 123 (2019) 196403. doi:https://link.aps.org/doi/10. 1103/PhysRevLett.123.196403

  57. [60]

    Zhang, Y

    Y . Zhang, Y . Su, L. He, Local Berry Phase Signa- tures of Bilayer Graphene in Intervalley Quantum Interference, Phys. Rev. Lett. 125 (2020) 116804. doi:https://link.aps.org/doi/10.1103/ PhysRevLett.125.116804

  58. [61]

    Z. Y . Zhu, Y . C. Cheng, U. Schwingenschlögl, Gi- ant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors, Phys. Rev. B 84 (2011) 153402. doi:https://doi.org/10. 1103/PhysRevB.84.153402

  59. [62]

    Z. Wang, J. Shan, K. F. Mak, V alley-and spin-polarized Landau levels in monolayer WSe 2, Nat. Nanotechnol. 12 (2) (2017) 144–149. doi:https://doi.org/10. 1038/nnano.2016.213

  60. [63]

    K. F. Mak, K. L. McGill, J. Park, P . L. McEuen, The val- ley Hall e ffect in MoS 2 transistors, Science 344 (6191) 18 (2014) 1489–1492. doi:https://doi.org/10.1126/ science.1250140

  61. [64]

    Cappelluti, R

    E. Cappelluti, R. Roldán, J. Silva-Guillén, P . Ordejón, F. Guinea, Tight-binding model and direct-gap /indirect- gap transition in single-layer and multilayer MoS2, Phys. Rev. B 88 (7) (2013) 075409. doi:https://doi.org/ 10.1103/PhysRevB.88.075409

  62. [65]

    N. P . Armitage, E. J. Mele, A. Vishwanath, Weyl and Dirac semimetals in three-dimensional solids, Rev. Mod. Phys. 90 (2018) 015001. doi:https://link.aps. org/doi/10.1103/RevModPhys.90.015001

  63. [66]

    Apalkov, W

    V . Apalkov, W. Luo, T. Chakraborty, Selective enhance- ment of Coulomb interactions in planar Weyl fermions, Phys. Rev. B 111 (2025) 195409. doi:https://link. aps.org/doi/10.1103/PhysRevB.111.195409

  64. [67]

    A. A. Burkov, Anomalous Hall E ffect in Weyl Metals, Phys. Rev. Lett. 113 (2014) 187202. doi:https://link.aps.org/doi/10.1103/ PhysRevLett.113.187202

  65. [68]

    Q. Lu, P . S. Reddy, H. Jeon, A. R. Mazza, M. Brahlek, W. Wu, S. A. Y ang, J. Cook, C. Conner, X. Zhang, et al., Realization of a two-dimensional weyl semimetal and topological fermi strings, Nat. Commun. 15 (1) (2024) 6001. doi:https://doi.org/10.1038/ s41467-024-50329-6

  66. [69]

    Chakraborty, P

    T. Chakraborty, P . Pietiläinen, The fractional quan- tum Hall e ffect: properties of an incompressible quantum fluid, V ol. 85, Springer Science & Busi- ness Media, 2012. doi:https://doi.org/10.1007/ 978-3-642-97101-3

  67. [70]

    Latini, K

    S. Latini, K. T. Winther, T. Olsen, K. S. Thygesen, Inter- layer Excitons and Band Alignment in MoS 2/hBN/WSe2 van der Waals Heterostructures, Nano Lett. 17 (2) (2017) 938–945. doi:https://doi.org/10.1021/ acs.nanolett.6b04275

  68. [71]

    Emmanuele, M

    R. Emmanuele, M. Sich, O. Kyriienko, V . Shahnazaryan, F. Withers, A. Catanzaro, P . Walker, F. Benimetskiy, M. Skolnick, A. Tartakovskii, et al., Highly nonlin- ear trion-polaritons in a monolayer semiconductor, Nat. Commun. 11 (1) (2020) 3589. doi:https://doi. org/10.1038/s41467-020-17340-z

  69. [72]

    S. Lisi, X. Lu, T. Benschop, T. A. de Jong, P . Stepanov, J. R. Duran, F. Margot, I. Cucchi, E. Cappelli, A. Hunter, et al., Observation of flat bands in twisted bilayer graphene, Nat. Phys. 17 (2) (2021) 189–193. doi: https://doi.org/10.1038/s41567-020-01041-x

  70. [73]

    J. M. Riley, F. Mazzola, M. Dendzik, M. Michiardi, T. Takayama, L. Bawden, C. Granerød, M. Lean- dersson, T. Balasubramanian, M. Hoesch, et al., Di- rect observation of spin-polarized bulk bands in an inversion-symmetric semiconductor, Nat. Phys. 10 (11) (2014) 835–839. doi:https://doi.org/10.1038/ nphys3105

  71. [74]

    X. Liu, Z. Tao, W. Luo, T. Chakraborty, In- terlayer excitons in double-layer transition metal dichalcogenide quantum dots, Phys. Rev. B 111 (2025) 085424. doi:https://link.aps.org/doi/ 10.1103/PhysRevB.111.085424

  72. [76]

    M. V . Berry, R. Mondragon, Neutrino billiards: time- reversal symmetry-breaking without magnetic fields, Proc. R. Soc. Lond. A 412 (1842) (1987) 53–74. doi: https://doi.org/10.1098/rspa.1987.0080

  73. [77]

    G.-B. Liu, H. Pang, Y . Y ao, W. Y ao, Intervalley cou- pling by quantum dot confinement potentials in mono- layer transition metal dichalcogenides, New J. Phys. 16 (10) (2014) 105011. doi:https://doi.org/10. 1088/1367-2630/16/10/105011

  74. [78]

    Gruji ´c, M

    M. Gruji ´c, M. Zarenia, A. Chaves, M. Tadi ´c, G. Farias, F. Peeters, Electronic and optical properties of a circu- lar graphene quantum dot in a magnetic field: Influ- ence of the boundary conditions, Phys. Rev. B 84 (20) (2011) 205441. doi:https://doi.org/10.1103/ PhysRevB.84.205441

  75. [79]

    Paananen, R

    T. Paananen, R. Egger, Finite-size version of the exci- tonic instability in graphene quantum dots, Phys. Rev. B 84 (15) (2011) 155456. doi:https://doi.org/10. 1103/PhysRevB.84.155456

  76. [80]

    Paananen, R

    T. Paananen, R. Egger, H. Siedentop, Signatures of Wigner molecule formation in interacting Dirac fermion quantum dots, Phys. Rev. B 83 (8) (2011) 085409. doi: https://doi.org/10.1103/PhysRevB.83.085409

  77. [81]

    V . Raca, M. Milovanovi ´c, Excitonic physics in a dirac quantum dot, Phys. Rev. B 96 (19) (2017) 195434. doi: https://doi.org/10.1103/PhysRevB.96.195434

  78. [82]

    Pena, Electron trapping in twisted light driven graphene quantum dots, Phys

    A. Pena, Electron trapping in twisted light driven graphene quantum dots, Phys. Rev. B 105 (2022) 045405. doi:https://doi.org/10.1103/ PhysRevB.105.045405

  79. [83]

    F. Qu, A. Dias, J. Fu, L. Villegas-Lelovsky, D. L. Azevedo, Tunable spin and valley dependent magneto- optical absorption in molybdenum disulfide quantum dots, Sci. Rep. 7 (1) (2017) 41044. doi:https://doi. org/10.1038/srep41044. 19

  80. [84]

    Mirzakhani, M

    M. Mirzakhani, M. Zarenia, P . V asilopoulos, F. Peeters, Electrostatically confined trilayer graphene quantum dots, Phys. Rev. B 95 (15) (2017) 155434. doi:https: //doi.org/10.1103/PhysRevB.95.155434

Showing first 80 references.