Large two-level magnetoresistance effect in doped manganite grain boundary junctions

2); (2) Walther-Meissner-Institut; C. Hoefener (1); Garching; Germany; Germany); J. B. Philipp (2); J. Klein (1); L. Alff (1; R. Gross (2) ((1) II. Physikalisches Institut

arxiv: cond-mat/0008105 · v1 · submitted 2000-08-07 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Large two-level magnetoresistance effect in doped manganite grain boundary junctions

J. B. Philipp (2) , C. Hoefener (1) , S. Thienhaus (1) , J. Klein (1) , L. Alff (1 , 2) , R. Gross (2) ((1) II. Physikalisches Institut , University of Cologne

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Germany (2) Walther-Meissner-Institut Garching Germany)

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classification ❄️ cond-mat.str-el cond-mat.mtrl-sci

keywords boundarygraineffectbehaviorjunctionsmagneticmagnetoresistanceobserved

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We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.

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Large two-level magnetoresistance effect in doped manganite grain boundary junctions

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