pith. sign in

arxiv: cond-mat/0010456 · v1 · submitted 2000-10-27 · ❄️ cond-mat

Negative differential resistance in nanotube devices

classification ❄️ cond-mat
keywords junctionsnanotubedifferentialnegativeresistanceundopedapproximationcalculating
0
0 comments X
read the original abstract

Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.